Search Results1-20 of  23

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  • Uesugi Tsutomu ID: 9000025021950

    Articles in CiNii:1

    • Electrical characterization of GaN p-n junctions grown on freestanding GaN substrates by metal-organic chemical vapor deposition (2011)
  • UESUGI Tsutomu ID: 9000004874838

    The authors are with the Department of Toyota Central R&D Labs. (1998 from CiNii)

    Articles in CiNii:1

    • Temperature Characteristics of Lateral Power MOS FET Formed by Solid Phase Epitaxy (1998)
  • UESUGI Tsutomu ID: 9000004898001

    Toyota Central R&D Labs., Inc. (2012 from CiNii)

    Articles in CiNii:17

    • A Study of MIS-AlGaN/GaN HEMTs with SiO_2 Films as Gate Insulator (2005)
    • A Vertical Operation of Insulated Gate AlGaN/GaN-HFETs (2006)
    • Development of a Vertical GaN Power Device (2007)
  • UESUGI Tsutomu ID: 9000005585782

    The School of Science and Engineering, Waseda University (1999 from CiNii)

    Articles in CiNii:4

    • Mechanism of Residue Formation in Silicon Trench Etching Using a Bromine-Based Plasma (1998)
    • Characteristics of a Metal/Ferroelectric/Insulater/Semiconductor Structure Using an Ultrathin Nitrided Oxide Film as the Buffer Layer (1999)
    • Influence of Ce Content on Crystal and Electrical Properties of Ce_xZr_<1-x>O_2 Thin Films on Si(100)Substrates (1997)
  • UESUGI Tsutomu ID: 9000005753073

    Department of Electronics, Faculty of Engineering Nagoya Institute of Technology (1981 from CiNii)

    Articles in CiNii:1

    • InGaAsP/InP Wavelength Division Solar Cells : II-3: NEW STRUCTURE AND ADVANCED MATERIAL SOLAR CELLS (1981)
  • UESUGI Tsutomu ID: 9000016372943

    Toyota Central R&D Laboratories, Inc. (2008 from CiNii)

    Articles in CiNii:1

    • GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching (2008)
  • UESUGI Tsutomu ID: 9000017504667

    Toyota Central R&D Labs., Inc. (2010 from CiNii)

    Articles in CiNii:1

    • Characteristics of GaN p-n diode with damage layer induced by ICP plasma process (2010)
  • UESUGI Tsutomu ID: 9000020237780

    Toyota Central Research & Development Labs., Inc. (1986 from CiNii)

    Articles in CiNii:1

    • Properties of silicon nitride films by plasma-CVD used SiH4-N2 gas system. (1986)
  • UESUGI Tsutomu ID: 9000107375597

    Articles in CiNii:1

    • Characteristics of GaN p-n diode with damage layer induced by ICP plasma process (2010)
  • UESUGI Tsutomu ID: 9000256724540

    <I>College of Bioresource Sciences, Nihon University</I> (2006 from CiNii)

    Articles in CiNii:1

    • Factors controlling seed germinability of rat's tail radish (Raphanus sativus L.) cv. Pakki-hood at a low temperature (2006)
  • Uesugi Tsutomu ID: 9000083525220

    Articles in CiNii:1

    • Interface Properties of Al$_{2}$O$_{3}$/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces (2012)
  • Uesugi Tsutomu ID: 9000401564060

    Articles in CiNii:1

    • GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching (2008)
  • Uesugi Tsutomu ID: 9000401674163

    Articles in CiNii:1

    • Mechanism of Residue Formation in Silicon Trench Etching Using a Bromine-Based Plasma (1998)
  • Uesugi Tsutomu ID: 9000401765757

    Articles in CiNii:1

    • A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor (2007)
  • Uesugi Tsutomu ID: 9000401794819

    Articles in CiNii:1

    • 2011-03-22 (2011)
  • Uesugi Tsutomu ID: 9000401980116

    Articles in CiNii:1

    • P-type doping of GaN$(000\bar{1})$ by magnesium ion implantation (2016)
  • Uesugi Tsutomu ID: 9000401982564

    Articles in CiNii:1

    • Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations (2018)
  • Uesugi Tsutomu ID: 9000401995689

    Articles in CiNii:1

    • 2011-03-01 (2011)
  • Uesugi Tsutomu ID: 9000402006904

    Articles in CiNii:1

    • Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces (2012)
  • Uesugi Tsutomu ID: 9000402013820

    Articles in CiNii:1

    • Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors (2013)
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