Search Results1-16 of  16

  • UETA Yoshihiro ID: 9000004745482

    Sharp Corporation (2006 from CiNii)

    Articles in CiNii:5

    • Violet laser diodes on GaN substrates with low aspect ratio (2003)
    • High power violet laser diodes with crack-free layers grown on GaN substrates (2006)
    • Violet laser diodes on GaN substrates with low aspect ratio (2003)
  • UETA Yoshihiro ID: 9000005544074

    Advanced Technology Research Laboratories, Sharp Corporation (2008 from CiNii)

    Articles in CiNii:2

    • Blue Laser Diodes Fabricated on m-Plane GaN Substrates (2008)
    • Effect of Slight Misorientation of Sapphire Substrate on Metalorganic Chemical Vapor Deposition Growth of GaN (1999)
  • UETA Yoshihiro ID: 9000107352661

    Devices Technology Research Laboratories, Sharp Corporation (2004 from CiNii)

    Articles in CiNii:1

    • AlGaInN Violet Laser Diodes Grown on GaN Substrates with Low Aspect Ratio (2004)
  • Ueta Yoshihiro ID: 9000003139680

    徳島大学英語英文学会 (1965 from CiNii)

    Articles in CiNii:1

    • スポーツと私 (1965)
  • Ueta Yoshihiro ID: 9000004960944

    Department of Electrical and Electronic Engineering,Faculty of Engineering,University of Tokushima (1994 from CiNii)

    Articles in CiNii:1

    • Energy band structures of GaN/GaP mono-layer superlattices including lattice mismatch (1994)
  • Ueta Yoshihiro ID: 9000252978752

    Department of Electrical and Electronic Engineering, Tokushima University (1991 from CiNii)

    Articles in CiNii:1

    • A New Reactor for Metalorganic Chemical Vapor Deposition Equipped with an Internal Rotary Flow Selector (1991)
  • Ueta Yoshihiro ID: 9000252984420

    Department of Electrical and Electronic Engineering, Tokushima University (1993 from CiNii)

    Articles in CiNii:1

    • Band Gap Energy and Band Lineup of III–V Alloy Semiconductors Incorporating Nitrogen and Boron (1993)
  • Ueta Yoshihiro ID: 9000258148089

    Advanced Technology and Research Laboratories, Sharp Corporation, 2613–1 Ichinomoto–cho, Tenri, Nara 632–8567, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Effect of Slight Misorientation of Sapphire Substrate on Metalorganic Chemical Vapor Deposition Growth of GaN. (1999)
  • Ueta Yoshihiro ID: 9000258169905

    Devices Technology Research Laboratories, Sharp Corporation (2004 from CiNii)

    Articles in CiNii:1

    • AlGaInN Violet Laser Diodes Grown on GaN Substrates with Low Aspect Ratio (2004)
  • Ueta Yoshihiro ID: 9000392723514

    Articles in CiNii:1

    • A New Reactor for Metalorganic Chemical Vapor Deposition Equipped with an Internal Rotary Flow Selector (1991)
  • Ueta Yoshihiro ID: 9000392724771

    Articles in CiNii:1

    • Band Gap Energy and Band Lineup of III–V Alloy Semiconductors Incorporating Nitrogen and Boron (1993)
  • Ueta Yoshihiro ID: 9000401563859

    Articles in CiNii:1

    • Blue Laser Diodes Fabricated onm-Plane GaN Substrates (2008)
  • Ueta Yoshihiro ID: 9000401626480

    Articles in CiNii:1

    • A New Reactor for Metalorganic Chemical Vapor Deposition Equipped with an Internal Rotary Flow Selector (1991)
  • Ueta Yoshihiro ID: 9000401635726

    Articles in CiNii:1

    • Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron (1993)
  • Ueta Yoshihiro ID: 9000401686818

    Articles in CiNii:1

    • Effect of Slight Misorientation of Sapphire Substrate on Metalorganic Chemical Vapor Deposition Growth of GaN (1999)
  • Ueta Yoshihiro ID: 9000401731762

    Articles in CiNii:1

    • AlGaInN Violet Laser Diodes Grown on GaN Substrates with Low Aspect Ratio (2004)
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