Search Results1-20 of  32

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  • Vaccaro Pablo O. ID: 9000014300858

    Articles in CiNii:1

    • Lateral p-n Junction Light Emitting Diodes Grown by MBE on GaAs(111)A and (311)A Patterned Substrates (1998)
  • Vaccaro Pablo O. ID: 9000242763584

    Articles in CiNii:1

    • 格子歪みを利用したGaAs基板上の3次元微細構造作製技術[マイクロオリガミ] (特集 光MEMS) (2002)
  • VACCARO Pablo O. ID: 9000004745844

    Department of Photonics, ATR Wave Engineering Laboratories (2004 from CiNii)

    Articles in CiNii:4

    • Electrical and optical properties of high-density lateral junction light-emitting diodes array (2004)
    • Electrical and optical properties of high-density lateral junction light-emitting diodes array (2004)
    • Electrical and optical properties of high-density lateral junction light-emitting diodes array (2004)
  • VACCARO Pablo O. ID: 9000004964629

    ATR Adaptive Communications Research Laboratories (2003 from CiNii)

    Articles in CiNii:1

    • Observation of SiGe/Si micro-origami structure fabricated on SOI substrate (2003)
  • VACCARO Pablo O. ID: 9000005578442

    ATR Adaptive Communications Research Laboratories (2002 from CiNii)

    Articles in CiNii:10

    • Carrier Dynamics in Piezoelectric Quantum Wells Grown on GaAs (111)A, (211)A and (311)A Studied by Time-Resolved Photoluminescence Spectroscopy (1996)
    • Spontaneous Formation of Nanostructures in In_xGa_<1-x>As Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-Oriented Substrates (1996)
    • Carrier Dynamics in Piezoelectric Quantum Wells Grown on GaAs (111)A, (211)A and (311)A Studied by Time Resolved Photoluminescence Spectroscopy (1995)
  • VACCARO Pablo O. ID: 9000014188925

    Advanced Technology Research Laboratories, Sharp Corporation (2008 from CiNii)

    Articles in CiNii:1

    • Blue Laser Diodes Fabricated on m-Plane GaN Substrates (2008)
  • VACCARO Pablo O. ID: 9000107378270

    ATR Adaptive Communications Research Labs. (2003 from CiNii)

    Articles in CiNii:1

    • Self-Assembly of Microstage Using Micro-Origami Technique on GaAs (2003)
  • VACCARO Pablo O. ID: 9000253327150

    ATR Adaptive Communications Research Laboratories (1999 from CiNii)

    Articles in CiNii:1

    • Optoelectronic devices based on lateral p-n junctions fabricated by molecular-beam epitaxy growth of silicon-doped GaAs on patterned (311) A-oriented substrates (1999)
  • VACCARO Pablo o. ID: 9000002429760

    ATR Adaptive Communications Research Laboratories (1999 from CiNii)

    Articles in CiNii:1

    • Optoelectronic devices based on lateral p-n junctions fabricated by molecular-beam epitaxy growth of silicon-doped GaAs on patterned (311) A-oriented substrates. (1999)
  • VACCARO Pablo ID: 9000004752674

    ATR Adaptive Communications Research Laboratories (2004 from CiNii)

    Articles in CiNii:2

    • GaAs 1 Chip Anti-Series Varactor Pair : Measurement and Simulation of Nonlinear Distortion (2004)
    • High frequency properties of a lateral PN junction photodiode (1999)
  • VACCARO Pablo ID: 9000004912573

    ATR Adaptive Communications Research Laboratories (2002 from CiNii)

    Articles in CiNii:5

    • Low Threshold and stable polarization characteristics in vertical cavity surface emitting lasers grown on (311)A-oriented GaAs substrates (1996)
    • Micro-Origami Technology for NEMS Devices (2002)
    • High Performance InGaAs/GaAs Vertical Cavity Surface Emitting Lasers on GaAs(311)A Substrates (1996)
  • VOCCARO Pablo ID: 9000001036017

    ATR Adaptive Communications Research Laboratories (2003 from CiNii)

    Articles in CiNii:1

    • Array of Micromachined Components Fabricated Using "Micro-Origami" Method (2003)
  • Vaccaro Pablo O. ID: 9000024957987

    Articles in CiNii:1

    • Strain Reduction and Long Wavelength Emission from InAs/GaAs Quamtum Dots by Using Growth Interruption in Molecular Beam Epitaxy (2006)
  • Vaccaro Pablo O. ID: 9000024982734

    Articles in CiNii:1

    • Electric field induced carrier sweep-out in tandem InGaN multi-quantum-well self-pulsating laser diodes (2011)
  • Vaccaro Pablo O. ID: 9000258126028

    ATR Optical and Radio Communications Research Laboratories, 2–2 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Quantum-Confined Stark Shift Due to Piezoelectric Effect in InGaAs/GaAs Quantum Wells Grown on (111)A GaAs. (1995)
  • Vaccaro Pablo O. ID: 9000258131714

    ATR Optical and Radio Communications Research Laboratories, 2–2 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan (1996 from CiNii)

    Articles in CiNii:1

    • Carrier Dynamics in Piezoelectric Quantum Wells Grown on GaAs (111)A, (211)A and (311)A Studied by Time-Resolved Photoluminescence Spectroscopy. (1996)
  • Vaccaro Pablo O. ID: 9000258136275

    ATR Adaptive Communications Research Laboratories, 2–2 Hikaridai, Seika–cho, Soraku–gun, Kyoto 619–02, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Spontaneous Formation of Nanostructures in InxGa1-xAs Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-oriented Substrates. (1997)
  • Vaccaro Pablo O. ID: 9000258163522

    ATR Adaptive Communications Research Laboratories, 2-2 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0288, Japan (2002 from CiNii)

    Articles in CiNii:1

    • Photoluminescence from High .GAMMA.-Electron Subbands and Intersubband Electroluminescence Using X-.GAMMA. Carrier Injection in a Simple GaAs/AlAs Superlattice. (2002)
  • Vaccaro Pablo O. ID: 9000401563853

    Articles in CiNii:1

    • Blue Laser Diodes Fabricated onm-Plane GaN Substrates (2008)
  • Vaccaro Pablo O. ID: 9000401647944

    Articles in CiNii:1

    • Quantum-Confined Stark Shift Due to Piezoelectric Effect in InGaAs/GaAs Quantum Wells Grown on (111)A GaAs (1995)
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