Search Results41-51 of  51

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  • Wakahara Akihiro ID: 9000401993759

    Articles in CiNii:1

    • Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO2/GaN-LED wafer (2016)
  • Wakahara Akihiro ID: 9000401994680

    Articles in CiNii:1

    • Study of Electrical Response in Pt/GaN Schottky Barrier Diode to CO Gas for High Temperature Gas Sensor (2011)
  • Wakahara Akihiro ID: 9000401997085

    Articles in CiNii:1

    • Integration of Micro-Light-Emitting-Diode Arrays and Silicon Driver for Heterogeneous Optoelectronic Integrated Circuit Device (2011)
  • Wakahara Akihiro ID: 9000402005625

    Articles in CiNii:1

    • Intelligent Ultraviolet Sensor Composed of GaN-Based Photodiode and N-Channel Metal Oxide Semiconductor Si-Charge Transfer Type Signal Processor (2012)
  • Wakahara Akihiro ID: 9000402008018

    Articles in CiNii:1

    • Plasma-Induced Damage and Recovery on Au/n-GaN Schottky Diode in Different Processes (2012)
  • Wakahara Akihiro ID: 9000402013919

    Articles in CiNii:1

    • Complementary Metal Oxide Semiconductor-Compatible Back-Side-Illuminated Photodiode for Optoelectronic Integrated Circuit Devices (2013)
  • Wakahara Akihiro ID: 9000402017006

    Articles in CiNii:1

    • Red-Light-Emitting Diodes with Site-Selective Eu-Doped GaN Active Layer (2013)
  • Wakahara Akihiro ID: 9000402036274

    Articles in CiNii:1

    • Structural and optical properties of Eu-doped GaN nanocolumns on (111) Si substrates grown by RF-plasma-assisted molecular beam epitaxy (2016)
  • Wakahara Akihiro ID: 9000402036472

    Articles in CiNii:1

    • Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices (2016)
  • Wakahara Akihiro ID: 9000402069608

    Articles in CiNii:1

    • Zinc Oxide Films Prepared with Undulator Beam (1999)
  • Wakahara Akihiro ID: 9000402070419

    Articles in CiNii:1

    • Effect of Electron Irradiation on Properties of CuInSe2Thin Films (2000)
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