Search Results1-20 of  22

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  • WANG Xinqiang ID: 9000001854495

    Department of Electronics and Mechanical Engineering, Venture Business Laboratory, and InN-Project as a Core Research for Evolutional Science and Technology Program of Japan Science and Technology, Chiba University (2006 from CiNii)

    Articles in CiNii:1

    • Effect of Precise Control of V/III Ratio on In-Rich InGaN Epitaxial Growth (2006)
  • WANG Xinqiang ID: 9000004785357

    Peking Univ. (2013 from CiNii)

    Articles in CiNii:15

    • Epitaxy control of InN-based III-nitrides towards development of novel nanostructure photonic devices (2007)
    • Surface Stoichiometry Control of InN Grown by RF-MBE Using In-situ Spectroscopic Ellipsometry (2004)
    • Surface Stoichiometry Control of InN Grown by RF-MBE Using In-situ Spectroscopic Ellipsometry (2004)
  • WANG Xinqiang ID: 9000015563561

    Center for Frontier Electronics and Photonics, Chiba University (2003 from CiNii)

    Articles in CiNii:1

    • Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface (2003)
  • WANG Xinqiang ID: 9000019052408

    State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University (2012 from CiNii)

    Articles in CiNii:1

    • High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy (2012)
  • WANG Xinqiang ID: 9000107363574

    Center for Frontier Electronics and Photonics, Chiba University (2004 from CiNii)

    Articles in CiNii:1

    • Effect of Low Temperature Thin GaN Layer on ZnO Film Grown on Nitridated c-Sapphire by Molecular Beam Epitaxy (2004)
  • WANG Xinqiang ID: 9000107390435

    Department of Electronics and Mechanical Engineering, Center for Frontier Electronics and Photonics, and InN-Project as a CREST program of JST, Chiba University (2006 from CiNii)

    Articles in CiNii:1

    • Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy (2006)
  • WANG Xinqiang ID: 9000238258033

    State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University (2012 from CiNii)

    Articles in CiNii:1

    • Indium Compositional Homogeneity in In_<0.17>Al_<0.83>N Epilayers Grown by Metal Organic Chemical Vapor Deposition (2012)
  • WANG Xinqiang ID: 9000256907189

    State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University (2013 from CiNii)

    Articles in CiNii:1

    • Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN Films (2013)
  • Wang Xinqiang ID: 9000258173412

    Center for Frontier Electronics and Photonics, Chiba University (2004 from CiNii)

    Articles in CiNii:1

    • Effect of Low Temperature Thin GaN Layer on ZnO Film Grown on Nitridated c-Sapphire by Molecular Beam Epitaxy (2004)
  • Wang Xinqiang ID: 9000283187289

    Center for Frontier Electronics and Photonics, Chiba University (2003 from CiNii)

    Articles in CiNii:1

    • Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface. (2003)
  • Wang Xinqiang ID: 9000401723725

    Articles in CiNii:1

    • Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface (2003)
  • Wang Xinqiang ID: 9000401733802

    Articles in CiNii:1

    • Effect of Low Temperature Thin GaN Layer on ZnO Film Grown on Nitridated c-Sapphire by Molecular Beam Epitaxy (2004)
  • Wang Xinqiang ID: 9000401755043

    Articles in CiNii:1

    • Effect of Precise Control of V/III Ratio on In-Rich InGaN Epitaxial Growth (2006)
  • Wang Xinqiang ID: 9000401756205

    Articles in CiNii:1

    • Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy (2006)
  • Wang Xinqiang ID: 9000401982273

    Articles in CiNii:1

    • 2018-01-23 (2018)
  • Wang Xinqiang ID: 9000401992602

    Articles in CiNii:1

    • Effect of stress on the Al composition evolution in AlGaN grown using metal organic vapor phase epitaxy (2016)
  • Wang Xinqiang ID: 9000402017238

    Articles in CiNii:1

    • InN/GaN Superlattices: Band Structures and Their Pressure Dependence (2013)
  • Wang Xinqiang ID: 9000402295677

    Articles in CiNii:1

    • Intensive luminescence from a thick, indium-rich In0.7Ga0.3N film (2019)
  • Wang Xinqiang ID: 9000402386119

    Articles in CiNii:1

    • Influence of intrinsic or extrinsic doping on lattice locations of carbon in semi-insulating GaN (2019)
  • Wang Xinqiang ID: 9000403405969

    Articles in CiNii:1

    • Migration of carbon from Ga sites to N sites in GaN: a combined PAS and hybrid DFT study (2019)
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