Search Results1-20 of  124

  • Watanabe Heiji ID: 9000403940240

    Articles in CiNii:1

    • Annealing behavior of open spaces in AlON films studied by monoenergetic positron beams (2018)
  • Watanabe Heiji ID: 9000403940792

    Articles in CiNii:1

    • Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements (2018)
  • WATANABE Heiji ID: 9000001464606

    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:3

    • Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching (2004)
    • High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmospheric Pressure Plasma CVD (2005)
    • Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃) (2006)
  • WATANABE Heiji ID: 9000001484874

    Silicon Systems Research Laboratories, NEC Corporation (2002 from CiNii)

    Articles in CiNii:1

    • Interface Engineering of ZrO_2/SiO_2/Si Layered Structure and its Gate Dielectric Applications (2002)
  • WATANABE Heiji ID: 9000001496495

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:6

    • High-Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics (2005)
    • Fully Silicided NiSi Gates on HfSiON Gate Dielectrics for Low Power Application (2004)
    • High Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics (2004)
  • WATANABE Heiji ID: 9000001501050

    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University (2005 from CiNii)

    Articles in CiNii:1

    • Charge Neutralization Using Focused 500eV Electron Beam in Focused Ion Beam System (2005)
  • WATANABE Heiji ID: 9000001506667

    Silicon Systems Research Laboratories, NEC Corporation (2001 from CiNii)

    Articles in CiNii:1

    • Interfacial Reactions of ZrO_2/SiO_2/Si Layered Structures (2001)
  • WATANABE Heiji ID: 9000001717893

    Fundamental Research Laboratories, NEC Corporation (1998 from CiNii)

    Articles in CiNii:1

    • Atomic-Scale Structure of SiO_2/Si(001) Interface Formed by Furnace Oxidation (1998)
  • WATANABE Heiji ID: 9000002169378

    Department of Material and Life Science, Graduate School of Engineering, Osaka University (2010 from CiNii)

    Articles in CiNii:7

    • Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties (2005)
    • High-resolution RBS analysis of Si-dielectrics interfaces (2006)
    • In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET (2007)
  • WATANABE Heiji ID: 9000002172846

    Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:1

    • Impact of PVD-based In-situ Fabrication Method for Metal/High-k Gate Stacks (2006)
  • WATANABE Heiji ID: 9000002172958

    Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:1

    • Low-Leakage-Current Ultra-thin SiO_2 Film by Low-Temperature Neutral Beam Oxidation (2006)
  • WATANABE Heiji ID: 9000005522423

    Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST) (2006 from CiNii)

    Articles in CiNii:31

    • Layer-by-Layer Oxidation of Si(001) Surfaces (1997)
    • High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamond p-i-n Junction (2006)
    • Polarization Fatigue Characteristics of Sol-Get Ferroelectric Pb(Zr_<0.4>Ti_<0.6>)O_3 Thin-Film Capacitors (1994)
  • WATANABE Heiji ID: 9000005845334

    Articles in CiNii:4

    • Mechanism of Layer-by-Layer Oxidation of Si (001) Surfaces Proceeding by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces (1999)
    • Process Characterization of Bi-layer Silylation Process for l93-nm Lithography (2000)
    • Progress in Top Surface Imaging Process (2000)
  • WATANABE Heiji ID: 9000006001573

    Graduate School of Engineering, Osaka University (2014 from CiNii)

    Articles in CiNii:45

    • Experimental study on improvement of the Fermi-level pinning in metal/HfSiON gate stack (2007)
    • MOS Transistor (2008)
    • Wide Controllability of Flatband Voltage in La_2O_3 Gate Stack Structures : Remarkable Advantages of La_2O_3 over HfO_2 (2006)
  • WATANABE Heiji ID: 9000107317210

    Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:1

    • Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning (2006)
  • WATANABE Heiji ID: 9000107340754

    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:1

    • Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode (2006)
  • WATANABE Heiji ID: 9000107340787

    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:1

    • Low-Temperature Crystallization of Amorphous Silicon by Atmospheric-Pressure Plasma Treatment in H_2/He or H_2/Ar Mixture (2006)
  • WATANABE Heiji ID: 9000107344100

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • 1.2nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs (2005)
  • WATANABE Heiji ID: 9000107344257

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Fully Silicided NiSi Gate Electrodes on HfSiON Gate Dielectrics for Low-Power Applications (2005)
  • WATANABE Heiji ID: 9000107345487

    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University (2005 from CiNii)

    Articles in CiNii:1

    • Antistatic Technique for Suppressing Charging in Focused Ion Beam Systems Using Microprobing and Ion-Beam-Assisted Deposition (2005)
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