Search Results1-12 of  12

  • Wagner Joachim ID: 9000015345668

    Articles in CiNii:1

    • Stand-off detection of hazardous substances by infrared laser based backscattering spectroscopy (2009)
  • WAGNER Joachim ID: 9000018185498

    Fraunhofer-Institut fur Angewandte Festkorperphysik (2009 from CiNii)

    Articles in CiNii:1

    • Continuous-Wave, Room-Temperature Operation of 2-μm Sb-Based Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser Monolithically Grown on GaAs Substrates (2009)
  • WAGNER Joachim ID: 9000019133394

    Fraunhofer-Institut fur Angewandte Festkorperphysik (2012 from CiNii)

    Articles in CiNii:1

    • AlGaN-Based 355nm UV Light-Emitting Diodes with High Power Efficiency (2012)
  • WAGNER Joachim ID: 9000263068833

    Fraunhofer Institute for Applied Solid State Physics IAF (2013 from CiNii)

    Articles in CiNii:1

    • Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias (2013)
  • Wagner Joachim ID: 9000252767494

    Fraunhofer-Institut für Angewandte Festkörperphysik (1993 from CiNii)

    Articles in CiNii:1

    • Nucleation, Relaxation and Redistribution of Si Layers in GaAs (1993)
  • Wagner Joachim ID: 9000392734309

    Articles in CiNii:1

    • Nucleation, Relaxation and Redistribution of Si Layers in GaAs (1993)
  • Wagner Joachim ID: 9000401567182

    Articles in CiNii:1

    • 2009-11-06 (2009)
  • Wagner Joachim ID: 9000401572487

    Articles in CiNii:1

    • AlGaN-Based 355 nm UV Light-Emitting Diodes with High Power Efficiency (2012)
  • Wagner Joachim ID: 9000401638881

    Articles in CiNii:1

    • Nucleation, Relaxation and Redistribution of Si Layers in GaAs (1993)
  • Wagner Joachim ID: 9000401986151

    Articles in CiNii:1

    • Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias (2013)
  • Wagner Joachim ID: 9000401986731

    Articles in CiNii:1

    • Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells (2013)
  • Wagner Joachim ID: 9000402016993

    Articles in CiNii:1

    • High Power Efficiency AlGaN-Based Ultraviolet Light-Emitting Diodes (2013)
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