Search Results1-20 of  25

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  • WATANABE Nozomu ID: 9000003834469

    Yamanashi University (2002 from CiNii)

    Articles in CiNii:1

    • Micro fabrication of ceramic composites and green sheets with eximer laser (2002)
  • WATANABE Nozomu ID: 9000005069050

    三菱重工業(株)神戸造船所 (2000 from CiNii)

    Articles in CiNii:1

    • Development of TMCP type HT100 steel plate with superior arrestability (2000)
  • WATANABE Nozomu ID: 9000006421944

    Department of Urology, University of Fukui (2013 from CiNii)

    Articles in CiNii:10

    • 類上皮型腎血管筋脂肪腫の2例 (2013)
    • OP-104 前立腺癌骨転移診断における18F-PETの臨床的有用性に関する検討(第95回日本泌尿器科学会総会) (2007)
    • OP-175 ラットの排尿に対する心理ストレスの影響およびCRF拮抗薬の効果(第95回日本泌尿器科学会総会) (2007)
  • WATANABE Nozomu ID: 9000253323144

    Optoelectronics Joint Research Laboratory. (1984 from CiNii)

    Articles in CiNii:1

    • Formation and Thermal Stability of Au-GaAs (001) Interfaces (1984)
  • WATANABE Nozomu ID: 9000254833745

    Research Lab. Oki Electric Industry Cop. Ltd. (1985 from CiNii)

    Articles in CiNii:1

    • Studies of Au-GaAs (001) interfaces prepared by molecular beam epitaxy. (1985)
  • WATANABE Nozomu ID: 9000254833751

    Research Lab. Oki Electric Industry Cop. Ltd. (1985 from CiNii)

    Articles in CiNii:1

    • Surface analysis of SiOxNy/GaAs system in plasma assisted device process. (1985)
  • Watanabe Nozomu ID: 9000242862389

    University ofTsukuba (2013 from CiNii)

    Articles in CiNii:1

    • No.22 Externality Analysis of Coal-fired Power Plants with desulfurization in Shanxi Province, China (2013)
  • Watanabe Nozomu ID: 9000252759128

    Optoelectronics Joint Research Laboratory (1985 from CiNii)

    Articles in CiNii:1

    • Surface Defect Formation in GaAs Layers Grown on Intentionally Contaminated Substrate by Molecular Beam Epitaxy (1985)
  • Watanabe Nozomu ID: 9000252762083

    Research Laboratory, Oki Electric Industry Co., Ltd. (1989 from CiNii)

    Articles in CiNii:1

    • Low-Phase-Aberration Output of 830 nm AlGaAs Offset-Coupled Laser Arrays (1989)
  • Watanabe Nozomu ID: 9000252963200

    Device Research Department, Optoelectronics Technology Research Cooporation (1987 from CiNii)

    Articles in CiNii:1

    • Epitaxially Induced Stress in GaAs Layer on V-Grooved Si and GaAs Substrates (1987)
  • Watanabe Nozomu ID: 9000252963882

    Research Laboratory, Oki Electric Industry Co. Ltd. (1988 from CiNii)

    Articles in CiNii:1

    • Phased-Array Laser Diode with Buried Optical Guides and Inverted Current Injection (1988)
  • Watanabe Nozomu ID: 9000252969196

    Device Research Department, Optoelectronics Technology Research Corporation (1989 from CiNii)

    Articles in CiNii:1

    • Molecular Beam Epitaxial Growth of In<I><SUB>x</SUB></I>Ga<SUB>1−<I>x</I></SUB>As and In<I><SUB>x</SUB></I>Al<SUB>1−<I>x</I></SUB>As on Si Substrates (1989)
  • Watanabe Nozomu ID: 9000258645209

    Nagaoka University of Technology (2005 from CiNii)

    Articles in CiNii:1

    • Time-resolved observation on the laser cleaning in water (2005)
  • Watanabe Nozomu ID: 9000283625142

    Chubu Regional Bureau, Ministry of Land, Infrastructure, Transport and Tourism, (2012 from CiNii)

    Articles in CiNii:1

    • An examination of the relationship between Hegel's concept of "alienation" and Ortega's concept of the "masses" (2012)
  • Watanabe Nozomu ID: 9000392701848

    Articles in CiNii:1

    • Surface Defect Formation in GaAs Layers Grown on Intentionally Contaminated Substrate by Molecular Beam Epitaxy (1985)
  • Watanabe Nozomu ID: 9000392706373

    Device Research Department, Optoelectronics Technology Research Corporation (1989 from CiNii)

    Articles in CiNii:1

    • Molecular Beam Epitaxial Growth of In<I><SUB>x</SUB></I>Ga<SUB>1−<I>x</I></SUB>As and In<I><SUB>x</SUB></I>Al<SUB>1−<I>x</I></SUB>As on Si Substrates (1989)
  • Watanabe Nozomu ID: 9000392707894

    Articles in CiNii:1

    • Phased-Array Laser Diode with Buried Optical Guides and Inverted Current Injection (1988)
  • Watanabe Nozomu ID: 9000392710616

    Articles in CiNii:1

    • Epitaxially Induced Stress in GaAs Layer on V-Grooved Si and GaAs Substrates (1987)
  • Watanabe Nozomu ID: 9000392729683

    Articles in CiNii:1

    • Low-Phase-Aberration Output of 830 nm AlGaAs Offset-Coupled Laser Arrays (1989)
  • Watanabe Nozomu ID: 9000401598255

    Articles in CiNii:1

    • Surface Defect Formation in GaAs Layers Grown on Intentionally Contaminated Substrate by Molecular Beam Epitaxy (1985)
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