Search Results1-13 of  13

  • WETZEL Christian ID: 9000004972785

    High Tech Research Center, Meijo University:(Present address)Uniroyal Optoelectronics (2002 from CiNii)

    Articles in CiNii:7

    • Characterization of Crystalline Quality of GaN on Sapphire and Ternary Alloys on GaN (1998)
    • Piezoelectric Stark-like Ladder in GaN/GaInN/GaN Heterostructures (1999)
    • Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN (1998)
  • WETZEL Christian ID: 9000018462289

    Smart Lighting Engineering Research Center, Future Chips Constellation, Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute (2010 from CiNii)

    Articles in CiNii:1

    • Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN (2010)
  • Wetzel Christian ID: 9000258140837

    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468–8502, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN. (1998)
  • Wetzel Christian ID: 9000258141550

    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468–8502, Japan (1998 from CiNii)

    Articles in CiNii:1

    • GaN Based Laser Diode with Focused Ion Beam Etched Mirrors. (1998)
  • Wetzel Christian ID: 9000258146284

    High–Tech Research Center and Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468–8502, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Piezoelectric Stark-like Ladder in GaN/GaInN/GaN Heterostructures. (1999)
  • Wetzel Christian ID: 9000258151978

    High Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design. (2000)
  • Wetzel Christian ID: 9000258158723

    High Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan (2002 from CiNii)

    Articles in CiNii:1

    • Optical Absorption in Polarized Ga1-xInxN/GaN Quantum Wells. (2002)
  • Wetzel Christian ID: 9000401677503

    Articles in CiNii:1

    • Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN (1998)
  • Wetzel Christian ID: 9000401677688

    Articles in CiNii:1

    • GaN Based Laser Diode with Focused Ion Beam Etched Mirrors (1998)
  • Wetzel Christian ID: 9000401678053

    Articles in CiNii:1

    • Structural Properties of Al 1- xIn xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy (1998)
  • Wetzel Christian ID: 9000401685962

    Articles in CiNii:1

    • Piezoelectric Stark-like Ladder in GaN/GaInN/GaN Heterostructures (1999)
  • Wetzel Christian ID: 9000401688677

    Articles in CiNii:1

    • Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design (2000)
  • Wetzel Christian ID: 9000401704638

    Articles in CiNii:1

    • Optical Absorption in Polarized Ga1-xInxN/GaN Quantum Wells (2002)
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