Search Results1-20 of  62

  • 1 / 4
  • Wu San Lein ID: 9000001684204

    Articles in CiNii:1

    • Optimized Si-Cap Layer Thickness for Tensile-Strained-Si/ Compressively Strained SiGe Dual-Channel Transistors in 0.13μm Complementary Metal Oxide Semiconductor Technology (2005)
  • Wu San-Lein ID: 9000024932116

    Articles in CiNii:1

    • Analysis of electron tunneling components in p[+] poly-gate p-channel metal-oxide-semiconductor field-effect transistors from direct tunneling region to Fowler-Nordheim region (Special issue: Dielectric thin films for future ULSI devices: science and technology) (2007)
  • Wu San Lein ID: 9000024940564

    Articles in CiNii:1

    • Evaluation of interface properly and DC characteristics enhancement in nanoscale n-channel metal-oxide-semiconductor field-effect transistor using stress memorization technique (2010)
  • Wu San-Lein ID: 9000024979706

    Articles in CiNii:1

    • Impact of reducing shallow trench isolation mechanical stress on active length for 40nm n-type metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials) (2011)
  • Wu San-Lein ID: 9000024980519

    Articles in CiNii:1

    • Investigation of stress memorization process on low-frequency noise performance for strained Si n-type metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials) (2011)
  • Wu San-Lein ID: 9000025030823

    Articles in CiNii:1

    • Impact of Ge content on flicker noise behavior of strained-SiGe p-type metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials) (2009)
  • Wu San Lein ID: 9000025061418

    Articles in CiNii:1

    • Impact of SiN on performance in novel complementary metal-oxide-semiconductor architecture usings substrate strained-SiGe and mechanical strained-Si technology (2007)
  • Wu San Lein ID: 9000025070328

    Articles in CiNii:1

    • Characterization of Oxide Tarps in 28 nm p-Type Metal-Oxide-Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise (Special Issue : Solid State Devices and Materials (1)) (2012)
  • Wu San Lein ID: 9000025118634

    Articles in CiNii:1

    • Hole Confinement and 1/f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal-Oxide-Semiconductor Field-Effect Transistors (2006)
  • Wu San-Lein ID: 9000241500207

    Articles in CiNii:1

    • Characterization of Oxide Traps in 28 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise (Special Issue : Solid State Devices and Materials) (2013)
  • Wu San Lein ID: 9000241500224

    Articles in CiNii:1

    • Effect of Annealing Process on Trap Properties in High-k/Metal Gate n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors through Low-Frequency Noise and Random Telegraph Noise Characterization (Special Issue : Solid State Devices and Materials) (2013)
  • WU San Lein ID: 9000001464726

    Department of Electronics Engineering, Cheng Shiu University (2004 from CiNii)

    Articles in CiNii:1

    • High-Performance Doped-Channel Field-Effect Transistor Using Graded SiGe Channel (2004)
  • WU San Lein ID: 9000001684203

    Department of Electronic Engineering, Cheng Shiu University (2005 from CiNii)

    Articles in CiNii:1

    • Investigation of Transport Mechanism for Strained Si n Metal-Oxide-Semiconductor Field-Effect Transistor Grown on Multi-Layer Substrate (2005)
  • WU San Lein ID: 9000005560923

    Department of Electronics Engineering, Cheng Shiu Institute of Technology (2002 from CiNii)

    Articles in CiNii:5

    • Schottky/Two-Dimensional Hole Gas Silicon Barrier Diodes with Single and Coupled Delta-Doped Wells (1994)
    • A New Silicon Field-Effect Transistors with Two-Hole-Transport-Mode (HTM) Channels Grown by Molecular Beam Epitaxy (MBE) (1998)
    • A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor (2002)
  • WU San Lein ID: 9000107389805

    Department of Electronics Engineering, Cheng Shiu University (2003 from CiNii)

    Articles in CiNii:1

    • P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor (2003)
  • WU San-Lein ID: 9000002176173

    Department of Electronic Engineering, Cheng Shiu University (2007 from CiNii)

    Articles in CiNii:1

    • Investigation of Impact Ionization in Strained-Si nMOSFETs (2007)
  • WU San-Lein ID: 9000240539725

    Department of Electronic Engineering, Cheng Shiu University (2012 from CiNii)

    Articles in CiNii:1

    • GaN Schottky Barrier Photodetectors with a β-Ga_2O_3 Cap Layer (2012)
  • WU San-Lein ID: 9000263068827

    Department of Electronic Engineering, Cheng Shiu University (2013 from CiNii)

    Articles in CiNii:1

    • Investigation of Trap Properties in High-k/Metal Gate p-Type Metal-Oxide-Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis (2013)
  • WU San Lein ID: 9000045944394

    Microelectronics Laboratory, Department of Electrical Engineering, National Cheng Kung University (1994 from CiNii)

    Articles in CiNii:1

    • High-Performance Double δ-Doped Channel Si Metal Semiconductor Field-Effect Transistors (1994)
  • Wu San Lein ID: 9000258121874

    Microelectronics Laboratory, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China (1994 from CiNii)

    Articles in CiNii:1

    • Schottky/Two-Dimensional Hole Gas Silicon Barrier Diodes with Single and Coupled Delta-Doped Wells. (1994)
  • 1 / 4
Page Top