Search Results1-20 of  28

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  • Xiong Bing ID: 9000025041805

    Articles in CiNii:1

    • 40Gb/s AlGaInAs electroabsorption modulated laser module based on identical epitaxial layer scheme (2007)
  • XIONG Bing ID: 9000004824433

    State Key Laboratory on Integrated Optoelectronics, Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University (2009 from CiNii)

    Articles in CiNii:6

    • Smooth and Vertical Etching of GaAs/GaInP/AlGaInP Using Inductively Coupled Cl_2/BCl_3/CH_4 Plasma (2004)
    • 40GHz AlGaInAs Multiple-Quantum-Well Integrated Electroabsorption Modulator/Distributed Feedback Laser Based on Identical Epitaxial Layer Scheme (2006)
    • Novel Planar Electrode Structure for High-Speed (>40GHz) Electroabsorption Modulators (2006)
  • XIONG Bing ID: 9000404637185

    九州大学大学院工学府海洋システム工学専攻 (2019 from CiNii)

    Articles in CiNii:1

    • INFLUENCE OF SEAWATER EXCHANGE WITH ARIAKE SEA ON STRATIFED FLOW FIELD IN YATSUSHIRO SEA (2019)
  • Xiong Bing ID: 9000025012109

    Articles in CiNii:1

    • Optimization of multiple quantum well electroabsorption modulators based on transmission performance simulation (2007)
  • Xiong Bing ID: 9000258171088

    State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University (2004 from CiNii)

    Articles in CiNii:1

    • Smooth and Vertical Etching of GaAs/GaInP/AlGaInP Using Inductively Coupled Cl2/BCl3/CH4 Plasma (2004)
  • Xiong Bing ID: 9000401566665

    Articles in CiNii:1

    • Influence of Master Laser's Lineshape on the Optically Generated Microwave Carrier by Injection Locking (2009)
  • Xiong Bing ID: 9000401731558

    Articles in CiNii:1

    • Smooth and Vertical Etching of GaAs/GaInP/AlGaInP Using Inductively Coupled Cl2/BCl3/CH4Plasma (2004)
  • Xiong Bing ID: 9000401754700

    Articles in CiNii:1

    • 40 GHz AlGaInAs Multiple-Quantum-Well Integrated Electroabsorption Modulator/Distributed Feedback Laser Based on Identical Epitaxial Layer Scheme (2006)
  • Xiong Bing ID: 9000401754954

    Articles in CiNii:1

    • Novel Planar Electrode Structure for High-Speed (>40 GHz) Electroabsorption Modulators (2006)
  • Xiong Bing ID: 9000401766071

    Articles in CiNii:1

    • 40 Gb/s AlGaInAs Electroabsorption Modulated Laser Module Based on Identical Epitaxial Layer Scheme (2007)
  • Xiong Bing ID: 9000401979092

    Articles in CiNii:1

    • 2019-02-05 (2019)
  • Xiong Bing ID: 9000401979677

    Articles in CiNii:1

    • Frequency noise performance improvement of mutually injection-locked semiconductor lasers (2019)
  • Xiong Bing ID: 9000401981075

    Articles in CiNii:1

    • Theoretical study on interfacial impact ionization in AlN/GaN periodically stacked structure (2017)
  • Xiong Bing ID: 9000401991349

    Articles in CiNii:1

    • Improving the internal quantum efficiency of green InGaN quantum dots through coupled InGaN/GaN quantum well and quantum dot structure (2015)
  • Xiong Bing ID: 9000401992678

    Articles in CiNii:1

    • High-power, wide-bandwidth modified uni-traveling-carrier photodiodes with an optimized depletion region (2016)
  • Xiong Bing ID: 9000402614388

    Articles in CiNii:1

    • Improved noise characteristics of mutually injection locked semiconductor lasers in a weak coupling regime (2019)
  • YANG Bing Xiong ID: 9000000226740

    Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University (1996 from CiNii)

    Articles in CiNii:1

    • Scanning Tunneling Microscope Study of (001)InP Surface Prepared by Gas Source Molecular Beam Epitaxy (1996)
  • Yang Bing Xiong ID: 9000258131932

    Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University, N13 W8, Sapporo 060, Japan (1996 from CiNii)

    Articles in CiNii:1

    • Scanning Tunneling Microscope Study of (001)InP Surface Prepared by Gas Source Molecular Beam Epitaxy. (1996)
  • Yang Bing Xiong ID: 9000283158265

    Articles in CiNii:1

    • Effects of Phosphorus Pressure on Growth Rate and Layer Quality of InP Grown by Gas Source Molecular Beam Epitaxy. (1994)
  • Yang Bing Xiong ID: 9000401637417

    Articles in CiNii:1

    • Molecular Beam Epitaxy and Migration-Enhanced Epitaxial Growth of InP Using Polycrystalline InP as Phosphorus Source (1993)
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