Search Results1-20 of  113

  • Yamabe Kikuo ID: 9000018934153

    Articles in CiNii:1

    • Oxidation of Silicon Utilizing a Microwave Plasma System : Electric-Stress Hardening of SiO₂ Films by Controlling the Surface and Interface Roughness (2012)
  • Yamabe Kikuo ID: 9000025038878

    Articles in CiNii:1

    • Comprehensive analysis of positive and negative bias temperature instabilities in high-k/metal gate stack metal-oxide-silicon field effect transistors with equivalent oxide thickness scaling to sub-1nm (Special issue: Solid state devices and materials) (2008)
  • Yamabe Kikuo ID: 9000025083885

    Articles in CiNii:1

    • Origin of the hole current in n-type high-k/metal gate stacks field effect transistor in an inversion state (2007)
  • Yamabe Kikuo ID: 9000025084631

    Articles in CiNii:1

    • Cathode electron injection breakdown model and time dependent dielectric breakdown lifetime prediction in high-k/metal gate stack p-type metal-oxide-silicon field effect transistors (2008)
  • Yamabe Kikuo ID: 9000241878228

    Articles in CiNii:1

    • Evaluation of Kink Generation Rate and Step Flow Velocity on Si(111) during Wet Etching (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces) (2013)
  • Yamabe Kikuo ID: 9000403869734

    Articles in CiNii:1

    • Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing (2013)
  • Yamabe Kikuo ID: 9000403918289

    Articles in CiNii:1

    • Electrical properties of Ge crystals and effective Schottky barrier height of NiGe/Ge junctions modified by P and chalcogen (S, Se, or Te) co-doping (2016)
  • YAMABE KIKUO ID: 9000258703716

    Graduate School of Pure and Applied Sciences, University of Tsukuba|Tsukuba Research Center for Interdisciplinary Materials Science (2009 from CiNii)

    Articles in CiNii:1

    • Control of atomic step flow on Si(111) with immersing in ultra low dissolved oxygen water (2009)
  • YAMABE Kikuo ID: 1000010272171

    Articles in CiNii:21

    • Reliability of thin gale oxide (1997)
    • JJAP分類表改訂のお知らせ (2003)
    • 応物会員/JJAPエディター・フレンドシップミーティング (2002)
  • YAMABE Kikuo ID: 9000000985300

    Articles in CiNii:1

    • EDITORIAL (2003)
  • YAMABE Kikuo ID: 9000001097972

    Institute of Applied Physics, University of Tsukuba (2009 from CiNii)

    Articles in CiNii:4

    • Selective Growth of Cu Nanowires on Si(111) Substrates (2003)
    • Nonuniformity in Ultrathin SiO_2 on Si(111) Characterized by Conductive Atomic Force Microscopy (2004)
    • Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water (2005)
  • YAMABE Kikuo ID: 9000001655103

    Institute of Materials Science University of Tsukuba (1995 from CiNii)

    Articles in CiNii:1

    • Characteristics and Reliability Issues of Ultra Thin Thermally Grown Si02 Films (1995)
  • YAMABE Kikuo ID: 9000003292788

    Department of Electronics,Osaka University:Research & Development Center (1979 from CiNii)

    Articles in CiNii:2

    • Resonant Brillouin Scattering by LA Phonons in CdS (1979)
    • Study of Resonant Brillouin Scattering in ZnSe by Injected Acoustic Waves (1976)
  • YAMABE Kikuo ID: 9000005567825

    Institute of Applied Physics, University of Tsukuba (2002 from CiNii)

    Articles in CiNii:4

    • Re-Oxidation of Thermally Nitrided Silicon Dioxide Thin Films (1995)
    • Flattening Phenomenon Observed during Epitaxial Growth of BaTiO_3 by Alternating Deposition Method (1999)
    • Epitaxial Growth of BaTiO_3 Thin Film on SrTiO_3 Substrate in Ultra High Vacuum without Introducing Oxidant (2001)
  • YAMABE Kikuo ID: 9000005646905

    Institute of Applied Physics, University of Tsukuba (1999 from CiNii)

    Articles in CiNii:1

    • Surface Microroughness Observed during Wet Etching of Silicon Dioxide with High Electric Field Stress (1999)
  • YAMABE Kikuo ID: 9000005688010

    Institute of Materials Science, University of Tsukuba (1998 from CiNii)

    Articles in CiNii:1

    • Time-Dependent Leakage Current of BaSrTiO_3 Film under High Temperature Bias Stress (1998)
  • YAMABE Kikuo ID: 9000006483534

    Institute of Applied Physics, University of Tsukuba:Center for TARA, University of Tsukuba (2002 from CiNii)

    Articles in CiNii:1

    • Homoepitaxial Growth of SrTiO_3 in an Ultrahigh Vacuum with Automatic Feeding of Oxygen from the Substrate at Temperatures as Low as 370℃ (2002)
  • YAMABE Kikuo ID: 9000015563732

    Institute of Applied Physics, University of Tsukuba (2003 from CiNii)

    Articles in CiNii:1

    • Leakage Current Distribution of Cu-Contaminated Thin SiO_2 (2003)
  • YAMABE Kikuo ID: 9000045891949

    Institute of Applied Physics, University of Tsukuba (2001 from CiNii)

    Articles in CiNii:1

    • SiO_2 Surface and SiO_2/Si Interface Topography Change by Thermal Oxidation (2001)
  • YAMABE Kikuo ID: 9000107306573

    Institute of Applied Physics, University of Tsukuba (2003 from CiNii)

    Articles in CiNii:1

    • Topography Change Due to Multilayer Oxidation at Sio_2/Si(111) Interfaces (2003)
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