Search Results1-20 of  53

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  • YAMAGUCHI Tomuo ID: 9000005572470

    Research Institute of Electronics, Shizuoka University （1996 from CiNii）

    Articles in CiNii:1

    • Low Temperature Fabrication of Thin Film Transistors using Microcrystalline Si Deposited by Cathode-Type RF Glow Discharge （1996）
  • YAMAGUCHI Tomuo ID: 9000020056572

    Research Institute of Electronice, Shizuoka University （1990 from CiNii）

    Articles in CiNii:3

    • Electrical properties of Al-doped and B-doped amorphous SiC:H films prepared by cosputtering. （1990）
    • Preparation and properties of Co-sputtered amorphous SixCyAlz:H films. （1989）
    • Optical properties of dispersed metal particles and size dependences in fine particles. （1984）
  • YAMAGUCHI Tomuo ID: 9000020321542

    Shizuoka University （2000 from CiNii）

    Articles in CiNii:1

    • サマリー・アブストラクト （2000）
  • YAMAGUCHI Tomuo ID: 9000021466146

    Research Institute of Electronics, Shizuoka University （1995 from CiNii）

    Articles in CiNii:1

    • サマリー・アブストラクト （1995）
  • YAMAGUCHI Tomuo ID: 9000107324428

    Research Institute of Electronics, Shizuoka University （2004 from CiNii）

    Articles in CiNii:1

    • Electrical Properties of Melt-Epitaxy-Grown InAs_<0.04>Sb_<0.96> Layers with Cutoff Wavelength of 12μm （2004）
  • YAMAGUCHI Tomuo ID: 9000107355556

    Research Institute of Electronics, Shizuoka University （1997 from CiNii）

    Articles in CiNii:1

    • Melt Mixing of the 0.3In/0.7GaSb/0.3Sb Solid Combination by Diffusion under Microgravity （1997）
  • YAMAGUCHI Tomuo ID: 9000107378110

    Research Institute of Electronics, Shizuoka University （2003 from CiNii）

    Articles in CiNii:1

    • InNAsSb Single Crystals with Cutoff Wavelength of 11-13.5 μm Grown by Melt Epitaxy （2003）
  • YAMAGUCHI Tomuo ID: 9000107386679

    Research Institute of Electronics, Shizuoka University （2006 from CiNii）

    Articles in CiNii:1

    • Optical Properties of InAsSb Single Crystals with Cutoff Wavelengths of 8-12μm Grown by Melt-Epitaxy （2006）
  • YAMAGUCHI Tomuo ID: 9000107390153

    Research Institute of Electronics, Shizuoka University （2006 from CiNii）

    Articles in CiNii:1

    • Diamond-Like Amorphous Carbon Films Deposited for Field-Emission Use by Upper-Electrode-RF-Power-Controlled Supermagnetron Plasma （2006）
  • Yamaguchi Tomuo ID: 1000040010938

    Shizuoka University （2005 from CiNii）

    Articles in CiNii:96

    • Properties of a-SiC:N:H Films Prepared by Magnetron Sputtering using Ammonia and Methane （1995）
    • Amorphous Ge-C Thin Films Prepared by rf Sputtering （1995）
    • Ga Doped a-SiC : H Films Prepared by Sputtering Using Composite Target （1997）
  • Yamaguchi Tomuo ID: 9000005538651

    Department of Applied Physics, Faculty of Engineering, University of Tokyo （1969 from CiNii）

    Articles in CiNii:1

    • Continuous Ellipsometric Determination of the Optical Constants and Thickness of a Silver Film during Deposition （1969）
  • Yamaguchi Tomuo ID: 9000010078242

    Articles in CiNii:1

    • Generalized scatterometry of laterally patterned periodic nanostructures based on spectroscopic ellipsometry （2005）
  • Yamaguchi Tomuo ID: 9000016486633

    Research Institute of Electronics, Shizuoka University （1990 from CiNii）

    Articles in CiNii:1

    • A Novel Method for Exciting Surface Plasmons in Metals--Coupling of Light with a Granular Dielectric Overcoat （1990）
  • Yamaguchi Tomuo ID: 9000016906639

    Articles in CiNii:1

    • A High-Sensitivity Particle Monitor Using an Integration Sphere （2000）
  • Yamaguchi Tomuo ID: 9000252765237

    Research Institute of Electronics, Shizuoka University （1992 from CiNii）

    Articles in CiNii:1

    • LPE Ga<SUB>1−<I>x</I></SUB>In<I><SUB>x</SUB></I>Sb Multigrading Layers with Cut-off Wavelength up to 4.71 μm (<I>x</I>=0.75) （1992）
  • Yamaguchi Tomuo ID: 9000252985831

    Research Institute of Electronics, Shizuoka University （1993 from CiNii）

    Articles in CiNii:1

    • Liquid Phase Epitaxial Growth of High-Quality GaInAsSb/InAs （1993）
  • Yamaguchi Tomuo ID: 9000252992103

    Department of Applied Physics, Faculty of Engineering, University of Tokyo （1969 from CiNii）

    Articles in CiNii:1

    • Continuous Ellipsometric Determination of the Optical Constants and Thickness of a Silver Film during Deposition （1969）
  • Yamaguchi Tomuo ID: 9000257957118

    Research Institute of Electronics, Shizuoka University （2006 from CiNii）

    Articles in CiNii:1

    • Magneto-optical spectroscopic scatterometry for analyzing patterned magnetic nanostructures （2006）
  • Yamaguchi Tomuo ID: 9000258121336

    Research Institute of Electronics, Shizuoka University, 3–5–1 Johoku, Hamamatsu 432 （1994 from CiNii）

    Articles in CiNii:1

    • Optical Properties of High-Quality Ga1-xInxAs1-ySby/InAs Grown by Liquid-Phase Epitaxy. （1994）
  • Yamaguchi Tomuo ID: 9000258130220

    Research Institute of Electronics, Shizuoka University, 3–5–1 Johoku, Hamamatsu 432, Japan （1996 from CiNii）

    Articles in CiNii:1

    • Low Temperature Fabrication of Thin Film Transistors using Microcrystalline Si Deposited by Cathode-Type RF Glow Discharge. （1996）
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