Search Results1-4 of  4

  • YANAGI Shin-ichiro ID: 9000002347932

    High-Technology Research Center, Department of Electronics, Kansai University (2002 from CiNii)

    Articles in CiNii:4

    • A Partial-Ground-Plane (PGP) Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) for Deep Sub-0.1μm Channel Regime (2001)
    • Proposal of a Partial-Ground-Plane(PGP) Silicon-on-Insulator(SOI) MOSFET for Deep Sub-100-nm Channel Regime (2000)
    • Proposal of a Partial-Ground-Plane (PGP) Silicon-on-Insulator (SOI) MOSFET for Deep sub-0.1-μm Channel Regime (2001)
  • Yanagi Shin-ichiro ID: 9000401698133

    Articles in CiNii:1

    • 2001-04-30 (2001)
  • Yanagi Shin-ichiro ID: 9000401711847

    Articles in CiNii:1

    • Consideration of Performance Limitation of Sub-100-nm Double-Gate Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) (2002)
  • Yanagi Shin-ichiro ID: 9000002733813

    High-Technology Research Center (2002 from CiNii)

    Articles in CiNii:1

    • Reconsideration of Off-Leakage Current Estimation of Sub -100-nm SOI MOSFETs and Device Selection for Applications (2002)
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