Search Results1-13 of  13

  • Yasuda Toshiki ID: 9000241669338

    Articles in CiNii:1

    • Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures (Special Issue : Recent Advances in Nitride Semiconductors) (2013)
  • Yasuda Toshiki ID: 9000242140298

    Articles in CiNii:1

    • Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al₀.₀₅Ga₀.₉₅N (2013)
  • YASUDA Toshiki ID: 9000005703972

    Faculty of Agriculture, Kyoto University, Kyoto (1978 from CiNii)

    Articles in CiNii:1

    • Studies on Control of Purple Nutsedge, Cyperus rotundus L., a Perennial Weed in Upland Fields : Growth and Change of Carbohydrate Content in Nutsedge (1978)
  • YASUDA Toshiki ID: 9000254335460

    Faculty of Agriculture, Kyoto University (1978 from CiNii)

    Articles in CiNii:1

    • Studies on Control of Purple Nutsedge, <i>Cyperus rotundus</i> L., a Perennial Weed in Upland Fields:Growth and Change of Carbohydrate Content in Nutsedge (1978)
  • YASUDA Toshiki ID: 9000290551755

    Articles in CiNii:6

    • Two-step graded p-AlGaN structure for deep UV-LEDs (2017)
    • Two-step graded p-AlGaN structure for deep UV-LEDs (2017)
    • Two-step graded p-AlGaN structure for deep UV-LEDs (2017)
  • YASUDA Toshiki ID: 9000298264015

    Tokyo National College of Technology (2013 from CiNii)

    Articles in CiNii:1

    • 2S03 Mechanical characteristic of the hepatocyte for the cell transplantation (2013)
  • YASUDA Toshiki ID: 9000305601701

    Tokyo Metropolitan University (2012 from CiNii)

    Articles in CiNii:1

    • 0711 Damage of the hepatocyte for the cell transplantation in shear flow (2012)
  • Yasuda Toshiki ID: 9000006588867

    College of Information Science and Engineering, Ritsumeikan University (2007 from CiNii)

    Articles in CiNii:1

    • D-7-17 Statistical Volume Modeling of Liver (2007)
  • Yasuda Toshiki ID: 9000401980281

    Articles in CiNii:1

    • Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template (2017)
  • Yasuda Toshiki ID: 9000401986943

    Articles in CiNii:1

    • Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al0.05Ga0.95N (2013)
  • Yasuda Toshiki ID: 9000402017109

    Articles in CiNii:1

    • Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures (2013)
  • Yasuda Toshiki ID: 9000402036138

    Articles in CiNii:1

    • Electron and hole accumulations at GaN/AlInN/GaN interfaces and conductive n-type AlInN/GaN distributed Bragg reflectors (2016)
  • Yasuda Toshiki ID: 9000402040142

    Articles in CiNii:1

    • High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy (2016)
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