Search Results1-20 of  74

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  • YASUTAKE Kiyoshi ID: 1000080166503

    Articles in CiNii:76

    • ラジカルソースMBE法を用いたSi(111)基板上AIN薄膜のエピタキシャル成長 (1995)
    • 回転電極を用いた高圧力プラズマCVDによるSi薄膜の高速成膜に関する研究(第1報) -成膜装置の試作とその成膜特性- (1996)
    • 高周波スパッタ蒸着法による多結晶Si薄膜の低温成長に関する研究(第4報) -結晶粒の大粒径化に関する検討- (1996)
  • YASUTAKE Kiyoshi ID: 9000001501051

    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University (2005 from CiNii)

    Articles in CiNii:1

    • Charge Neutralization Using Focused 500eV Electron Beam in Focused Ion Beam System (2005)
  • YASUTAKE Kiyoshi ID: 9000002169382

    Graduate School of Engineering, Osaka University (2007 from CiNii)

    Articles in CiNii:3

    • Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties (2005)
    • In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET (2007)
    • Characteristics of Pure Ge_3N_4 Dielectric Layers Formed by High-Density Plasma Nitridation (2007)
  • YASUTAKE Kiyoshi ID: 9000002172847

    Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:1

    • Impact of PVD-based In-situ Fabrication Method for Metal/High-k Gate Stacks (2006)
  • YASUTAKE Kiyoshi ID: 9000005535293

    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:7

    • Low Temperature Growth of InGaAs/GaAs Strained-Layer Single Quantum Wells (1997)
    • Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching (2004)
    • Influence of H_2/SiH_4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma CVD (2005)
  • YASUTAKE Kiyoshi ID: 9000005915176

    Articles in CiNii:1

    • Observation of Lattice Undulation of Commercial Bonded Silicon-On-Insulator Wafers by Synchrotron X-Ray Topography (2001)
  • YASUTAKE Kiyoshi ID: 9000006486831

    Department of Material and Life Science, Graduate School of Engineering, Osaka University (2002 from CiNii)

    Articles in CiNii:1

    • Observation of Lattice Undulation of Commercial Bonded Silicon-On-Insulator Wafers by Synchrotron X-Ray Topography : Structure and Mechanical and Thermal Properties of Condensed Matter (2002)
  • YASUTAKE Kiyoshi ID: 9000006799429

    Graduate School of Engineering, The University of Tokyo (2008 from CiNii)

    Articles in CiNii:3

    • Aquisition and Analysis of Information by the RFID System in a Apparel Store (2008)
    • Aquisition and Analysis of Information by the RFID System in a Apparel Store (2008)
    • Aquisition and Analysis of Information by the RFID System in a Apparel Store (2008)
  • YASUTAKE Kiyoshi ID: 9000015563612

    Department of Material and Life Science, Graduate School of Engineering, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Large-Area X-Ray Topographs of Lattice Undulation of Bonded Silicon-On-Insulator Wafers (2003)
  • YASUTAKE Kiyoshi ID: 9000107324562

    Department of Material and Life Science, Graduate School of Engineering, Osaka University (2004 from CiNii)

    Articles in CiNii:1

    • Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers (2004)
  • YASUTAKE Kiyoshi ID: 9000107327286

    Department of Material and Life Science, Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:1

    • White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers (2006)
  • YASUTAKE Kiyoshi ID: 9000107340755

    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:1

    • Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode (2006)
  • YASUTAKE Kiyoshi ID: 9000107340788

    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:1

    • Low-Temperature Crystallization of Amorphous Silicon by Atmospheric-Pressure Plasma Treatment in H_2/He or H_2/Ar Mixture (2006)
  • YASUTAKE Kiyoshi ID: 9000107345488

    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University (2005 from CiNii)

    Articles in CiNii:1

    • Antistatic Technique for Suppressing Charging in Focused Ion Beam Systems Using Microprobing and Ion-Beam-Assisted Deposition (2005)
  • YASUTAKE Kiyoshi ID: 9000107351046

    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University (2007 from CiNii)

    Articles in CiNii:1

    • Mechanism of Suppressed Change in Effective Work Functions for Impurity-Doped Fully Silicided NiSi Electrodes on Hf-Based Gate Dielectrics (2007)
  • YASUTAKE Kiyoshi ID: 9000107377212

    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University (2005 from CiNii)

    Articles in CiNii:1

    • Role of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics for Termination of Local Current Leakage Paths (2005)
  • YASUTAKE Kiyoshi ID: 9000107384313

    Articles in CiNii:1

    • Formation of Polycrystalline Si Thin Films Using Nanocrystalline Ge Nuclei (2008)
  • YASUTAKE Kiyoshi ID: 9000107390288

    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University (2006 from CiNii)

    Articles in CiNii:1

    • Structural Characterization of Polycrystalline 3C-SiC Films Prepared at High Rates by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Monomethylsilane (2006)
  • YASUTAKE Kiyoshi ID: 9000242083939

    大阪大学大学院工学研究科 (2013 from CiNii)

    Articles in CiNii:20

    • Atomically Controlled Fabrication Process as the Next Generation Ultra-Precision Machining Technology (2013)
    • Epitaxial Growth of Si by Atmospheric Pressure Plasma CVD (IV) (2003)
    • Deposition of Silicon Nitride Film by Atmospheric Pressure Plasma CVD-Effect of H2- (2003)
  • Yasutake Kiyoshi ID: 9000024933741

    Articles in CiNii:1

    • Photoluminescence study of defect-free epitaxial silicon films grown at low temperatures by atmospheric pressure plasma chemical vapor deposition (Special issue: Solid state devices and materials) (2007)
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