Search Results1-20 of  27

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  • YOSHIDA Seikoh ID: 9000001620542

    Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. (2005 from CiNii)

    Articles in CiNii:3

    • Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure(Power Devices, <Special Section>Fundamental and Application of Advanced Semiconductor Devices) (2005)
    • Low On-Voltage Operation GaN Based Field Effect Schottky Barrier Diode (2004)
    • Low On-Voltage Operation GaN Based Field Effect Schottky Barrier Diode (2004)
  • YOSHIDA Seikoh ID: 9000002164849

    Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd (1999 from CiNii)

    Articles in CiNii:1

    • Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy (1999)
  • YOSHIDA Seikoh ID: 9000004890472

    Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. (2003 from CiNii)

    Articles in CiNii:1

    • High Power AIGaN/GaN HFET (2003)
  • YOSHIDA Seikoh ID: 9000005002581

    Advanced Technology Center, Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. (1999 from CiNii)

    Articles in CiNii:3

    • Foreword to Special Issue on Realization of the Perfect Crystallization (1998)
    • Electronic devices using GaN (1999)
    • Fabrication of n-p-n GaN bipolar junction transistor and its high temperature operation (1999)
  • YOSHIDA Seikoh ID: 9000005654409

    Optoelectronics Technology Research Laboratory (OTL) (1994 from CiNii)

    Articles in CiNii:1

    • Scattering of Pulsed Trimethylgallium Beam from Clean and Oxidized GaAs Surfaces (1994)
  • YOSHIDA Seikoh ID: 9000005690903

    Yokohama R & D Laboratories, The Furukawa Electric Co., Ltd. (1998 from CiNii)

    Articles in CiNii:1

    • Reliability of GaN Metal Semiconductor Field-Effect Transistor at High Temperature (1998)
  • YOSHIDA Seikoh ID: 9000005735253

    Optoelectronics Technology Research Laboratory (OTL) (1995 from CiNii)

    Articles in CiNii:1

    • In Situ Mass Spectrometric Analysis of Surface Chemistry in MOMBE Growth (1995)
  • YOSHIDA Seikoh ID: 9000005779385

    Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd (2002 from CiNii)

    Articles in CiNii:1

    • A Fabrication of Very Low Contact Resistance AlGaN/GaN Heterojunction Field-Effect Transistor Using Selective Area Growth Technique by Gas-Source Molecular Beam Epitaxy (2002)
  • YOSHIDA Seikoh ID: 9000107313681

    Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. (2007 from CiNii)

    Articles in CiNii:1

    • Solid-Phase Diffusion of Carbon into GaN Using SiN_x/CN_x/GaN Structure (2007)
  • YOSHIDA Seikoh ID: 9000253327287

    Advanced Technology Center, Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. (1999 from CiNii)

    Articles in CiNii:1

    • Electronic devices using GaN (1999)
  • Yoshida Seikoh ID: 9000004336817

    Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. (2008 from CiNii)

    Articles in CiNii:28

    • Trimethylgallium Surface Reaction as a Function of GaAs Reconstructed Structure (1997)
    • Fabrication of GaInNP MQW-structure LED grown by a laser-assisted MOCVD (2003)
    • High power and high-speed switching AlGaN/GaN HFET (2005)
  • Yoshida Seikoh ID: 9000047245270

    Articles in CiNii:1

    • Investigation of Surface Pits Originating in Dislocations in AlGaN/GaN Epitaxial Layer Grown on Si Substrate with Buffer Layer (2006)
  • Yoshida Seikoh ID: 9000252988038

    Optoelectronics Technology Research Laboratory (OTL) (1993 from CiNii)

    Articles in CiNii:1

    • Temperature-Programmed Scattering (TPS) Study on Reactivity Difference of GaAs and GaAs Oxide Surfaces (1993)
  • Yoshida Seikoh ID: 9000258126000

    Optoelectronics Technology Research Laboratory (OTL), 5–5 Tohkodai, Tsukuba, Ibaraki 300–26, Japan (1995 from CiNii)

    Articles in CiNii:1

    • In Situ Mass Spectrometric Analysis of Surface Chemistry in MOMBE Growth. (1995)
  • Yoshida Seikoh ID: 9000258141691

    Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., 2–4–3 Okano, Nishi–ku, Yokohama 220, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Reliability of GaN Metal Semiconductor Field-Effect Transistor at High Temperature. (1998)
  • Yoshida Seikoh ID: 9000258163045

    Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd, 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan (2002 from CiNii)

    Articles in CiNii:1

    • A Fabrication of Very Low Contact Resistance AlGaN/GaN Heterojunction Field-Effect Transistor Using Selective Area Growth Technique by Gas-Source Molecular Beam Epitaxy. (2002)
  • Yoshida Seikoh ID: 9000392675128

    Optoelectronics Technology Research Laboratory (OTL), 5–5 Tohkodai, Tsukuba, Ibaraki 300–26 (1994 from CiNii)

    Articles in CiNii:1

    • Scattering of Pulsed Trimethylgallium Beam from Clean and Oxidized GaAs Surfaces. (1994)
  • Yoshida Seikoh ID: 9000392735279

    Articles in CiNii:1

    • Temperature-Programmed Scattering (TPS) Study on Reactivity Difference of GaAs and GaAs Oxide Surfaces (1993)
  • Yoshida Seikoh ID: 9000401638262

    Articles in CiNii:1

    • Temperature-Programmed Scattering (TPS) Study on Reactivity Difference of GaAs and GaAs Oxide Surfaces (1993)
  • Yoshida Seikoh ID: 9000401647411

    Articles in CiNii:1

    • Scattering of Pulsed Trimethylgallium Beam from Clean and Oxidized GaAs Surfaces (1994)
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