Search Results1-20 of  34

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  • Yoshino Takenobu ID: 9000009438769

    Articles in CiNii:1

    • High-Field Magnetization and magnetoresistance of single-Crystal CeRhSb (1999)
  • Yoshino Takenobu ID: 9000025063538

    Articles in CiNii:1

    • Young's modulus enhancement of mesoporous pure-silica-zeolite low-dielectric-constant films by ultraviolet and silylation treatments (2009)
  • Yoshino Takenobu ID: 9000025087165

    Articles in CiNii:1

    • Electrical characteristics of mesoporous pure-silica-zeolite film (2007)
  • YOSHINO Takenobu ID: 9000002168871

    Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST) (2008 from CiNii)

    Articles in CiNii:3

    • Electrical Characteristics of Porous Zeolite Interlayer Dielectrics (2005)
    • Plasma-enhanced polymerization thin films as a drift barrier for Cu interconnects (2006)
    • Effect of Phosphorus Atom in Self-Assembled Monolayer as a Drift Barrier for Advanced Copper Interconnects (2008)
  • YOSHINO Takenobu ID: 9000002177568

    Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (AIST) (2007 from CiNii)

    Articles in CiNii:2

    • Influences of Skeletal Structure and Porosity on Dielectric and Mechanical Properties of Porous Organosilica Low-k Films (2007)
    • Determination of mechanical properties of porous silica low-k films on Si substrates using orientation dependence of surface acoustic wave (2007)
  • YOSHINO Takenobu ID: 9000003259254

    Articles in CiNii:41

    • Report of the Symposium on Ethics of Scientific and Technological Professional (2003)
    • ジェンダーで考える教育の現在(いま)(第27回)セクシュアル・ハラスメントのないキャンパスをめざして (2009)
    • Solution to the digital divide through Mongolian public education though a collaborative effort with Japanese universities (Special issue: Open source policy and promotion of IT industries in East Asia) (2010)
  • YOSHINO Takenobu ID: 9000004964776

    MIRAI-ASRC-AIST (2005 from CiNii)

    Articles in CiNii:7

    • Ultra Clean Technology Using UV/Photoelectron Method for Semiconductor Transportation and Its Effect on MOS Devices (2001)
    • Influence of Wafer Storage Environment on MOS Device Characteristics (2002)
    • Development of Mesoporous Silica Films for Ultra Low-k Interlayer Dielectrics (2005)
  • YOSHINO Takenobu ID: 9000006464641

    Research Center for Nanodevices and Systems, Hiroshima University (2002 from CiNii)

    Articles in CiNii:3

    • Influence of Organic Contaminant on Breakdown Characteristics of MOS Capacitors with Thin SiO_2 (2001)
    • Influence of Organic Contaminant on Breakdown Characteristics of MOS Capacitors with Thin SiO_2 (2000)
    • Influence of Organic Contaminant on Trap Generation in Thin SiO_2 of Metal-Oxide-Semiconductor Capacitors (2002)
  • YOSHINO Takenobu ID: 9000006902896

    Chiba Institute of Technology (2005 from CiNii)

    Articles in CiNii:3

    • 5323 A study on the effective space-use of education and research facilities : A case study on the design department of Chiba Institute of Technology (2004)
    • 5320 A study on the effective space-use of student refectory : Design user side problems of existing facilities (2004)
    • 5321 A study on the facilities programming of the department with the increasing number of graduate student : A case study on the design department of Chiba Institute of Technology (2005)
  • YOSHINO Takenobu ID: 9000107334970

    Research Center for Nanodevices and Systems, Hiroshima University (2001 from CiNii)

    Articles in CiNii:1

    • Effect of Light Irradiation on Native Oxidation of Silicon Surface (2001)
  • YOSHINO Takenobu ID: 9000107346189

    MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST) (2004 from CiNii)

    Articles in CiNii:1

    • Transient Capacitance Spectroscopy of Copper-Ion-Drifted Methylsilsesquiazane-Methylsilsesquioxane Interlayer Dielectrics (2004)
  • YOSHINO Takenobu ID: 9000107390068

    Research Center for Nanodevices and Systems, Hiroshima University (2003 from CiNii)

    Articles in CiNii:1

    • Organic Contamination Dependence of Process-Induced Interface Trap Generation in Ultrathin Oxide Metal Oxide Semiconductor Transistors (2003)
  • Yoshino Takenobu ID: 9000024933848

    Articles in CiNii:1

    • Plasma-enhanced-polymerization thin-film as a drift barrier for Cu ions (Special issue: Solid state devices and materials) (2007)
  • Yoshino Takenobu ID: 9000049841045

    Articles in CiNii:1

    • Determination of Mechanical Properties of Porous Silica Low-kFilms on Si Substrates Using Orientation Dependence of Surface Acoustic Wave (2008)
  • Yoshino Takenobu ID: 9000062360568

    Articles in CiNii:1

    • Plasma-Enhanced Co-Polymerization of Organo-siloxane and Hydrocarbon for Low-k/Cu Interconnects (2007)
  • Yoshino Takenobu ID: 9000081186687

    Articles in CiNii:1

    • Integration of Self-Assembled Porous Silica in Low-k/Cu Damascene Interconnects (2009)
  • Yoshino Takenobu ID: 9000258162738

    Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, Japan (2002 from CiNii)

    Articles in CiNii:1

    • Influence of Organic Contaminant on Trap Generation in Thin SiO2 of Metal-Oxide-Semiconductor Capacitors. (2002)
  • Yoshino Takenobu ID: 9000258164681

    Research Center for Nanodevices and Systems, Hiroshima University (2003 from CiNii)

    Articles in CiNii:1

    • Organic Contamination Dependence of Process-Induced Interface Trap Generation in Ultrathin Oxide Metal Oxide Semiconductor Transistors (2003)
  • Yoshino Takenobu ID: 9000258171150

    MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST) (2004 from CiNii)

    Articles in CiNii:1

    • Transient Capacitance Spectroscopy of Copper-Ion-Drifted Methylsilsesquiazane-Methylsilsesquioxane Interlayer Dielectrics (2004)
  • Yoshino Takenobu ID: 9000258191897

    Faculty of Science, Hiroshima University, Higashi–Hiroshima 739–8526 (1998 from CiNii)

    Articles in CiNii:1

    • High-Field Magnetization and Magnetoresistance of Single-Crystal CeRhSb. (1998)
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