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  • YOSIDA Kazutosi ID: 9000020057699

    R. & D. Department, Koito Manufacturing Co. LTD. (1990 from CiNii)

    Articles in CiNii:1

    • Annealing effects of conductivity for a-Si1-xCx:H films prepared by R.F. glow discharge decomposition. (1990)
  • YOSIDA Kazutosi ID: 9000020059302

    R.&D. Department, Koito Manufacturing Co. LTD. (1989 from CiNii)

    Articles in CiNii:1

    • Subustrate temperature dependence of a-SiC:H films prepared by R.F. glow discharge decomposition. (1989)
  • YOSIDA Kazutosi ID: 9000021459251

    R. & D. Department, Koito Manufacturing Co. LTD. (1991 from CiNii)

    Articles in CiNii:1

    • Influence of SiH4/CH4 gas flow rate ratio on the properties of a-SiC:H films showing a negative temperature coeffcient in D.C. conductivity. (1991)
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