Search Results1-20 of  25

  • 1 / 2
  • YUGAMI JIRO ID: 9000020289737

    Department of Applied Chemistry, Waseda University (1984 from CiNii)

    Articles in CiNii:1

    • Effects of fluidization states on polarization characteristics of flow-through particulate electrode. (1984)
  • YUGAMI Jiro ID: 9000001721603

    Central Research Laboratory, Hitachi, Ltd. (1995 from CiNii)

    Articles in CiNii:1

    • The Oxide Reliability Improvement with Ultra-Dry Unloading in Wet Oxidation Using Load Lock Oxidation System (1995)
  • YUGAMI Jiro ID: 9000002165549

    Central Research Laboratory, Hitachi, Ltd. (1999 from CiNii)

    Articles in CiNii:1

    • A TiO2 Gate Insulator of a 1-nm Equivalent Oxide Thickness Deposited by Electron-Beam Evaporation (1999)
  • YUGAMI Jiro ID: 9000002171066

    Process Development Dept., Process Technology Development Div., Production and Technology Unit, Renesas Technology Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Low temperature divided CVD technique for TiN metal gate electrodes of p-MISFETs (2005)
  • YUGAMI Jiro ID: 9000002177398

    Process Technology Development Div., Renesas Technology Corp. (2007 from CiNii)

    Articles in CiNii:1

    • Study of Stress from Discontinuous SiN Liner for Fully-Silicided Gate Process (2007)
  • YUGAMI Jiro ID: 9000004963400

    Semiconductor Leading Edge Technologies, Inc. (2009 from CiNii)

    Articles in CiNii:22

    • Measurement of Transient and Steady Currents in MOS Capacitor and Analysis of Degradation Mechanism (1997)
    • Analysis of Metal Impurity in Hf Oxide Originated in Source Materials and Its Impact on TDDB Lifetime (2007)
    • Device Reliability Degradation by Copper Contamination and its Mechanism in Semiconductor Process (2002)
  • YUGAMI Jiro ID: 9000005685420

    Central Research Laboratory, Hitachi, Ltd. (2002 from CiNii)

    Articles in CiNii:1

    • Copper Distribution near a SiO_2/Si Interface under Low-Temperature Annealing (2002)
  • YUGAMI Jiro ID: 9000005718338

    Central Research Laboratory, Hitachi Ltd. (1997 from CiNii)

    Articles in CiNii:1

    • The Increase of the Native Oxide Thickness on H-Terminated Si Surfaces by Gaseous Contamination in a Clean Room Atmosphere (1997)
  • YUGAMI Jiro ID: 9000107351035

    Renesas Technology Corp. (2007 from CiNii)

    Articles in CiNii:1

    • V_<ox>/E_<ox>-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress (2007)
  • YUGAMI Jiro ID: 9000107352650

    Central Research Laboratory (2004 from CiNii)

    Articles in CiNii:1

    • Copper Diffusion Behavior in SiO_2/Si Structure During 400℃ Annealing (2004)
  • YUGAMI Jiro ID: 9000253327922

    Central Research Laboratory, Hitachi Ltd. (2001 from CiNii)

    Articles in CiNii:1

    • Introduction of new materials in silicon devices (2001)
  • Yugami Jiro ID: 9000002316993

    Articles in CiNii:2

    • Theory of Lifelong Education as a Social System (Theory and Trend of Lifelong Education 1 : Theories of Lifelong Education) (1995)
    • Renaissance of Social Education (1992)
  • Yugami Jiro ID: 9000066375792

    Articles in CiNii:1

    • Diffusion Control Techniques for TiN Stacked Metal Gate Electrodes for p-Type Metal Insulator Semiconductor Field Effect Transistors (2007)
  • Yugami Jiro ID: 9000072238568

    Articles in CiNii:1

    • Stress from Discontinuous SiN Liner for Fully Silicided Gate Process (2008)
  • Yugami Jiro ID: 9000077869060

    Articles in CiNii:1

    • Phase and Composition Control of Ni Fully Silicided Gates by Nitrogen Ion Implantation and Double Ni Silicidation (2008)
  • Yugami Jiro ID: 9000252761788

    Central Research Laboratory, Hitachi, Ltd. (1989 from CiNii)

    Articles in CiNii:1

    • Tunneling Acoustic Microscope (1989)
  • Yugami Jiro ID: 9000258136059

    Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan (1997 from CiNii)

    Articles in CiNii:1

    • The Increase of the Native Oxide Thickness on H-Terminated Si Surfaces by Gaseous Contamination in a Clean Room Atmosphere. (1997)
  • Yugami Jiro ID: 9000258169932

    Central Research Laboratory, Hitachi, Ltd. (2004 from CiNii)

    Articles in CiNii:1

    • Copper Diffusion Behavior in SiO2/Si Structure During 400.DEG.C. Annealing (2004)
  • Yugami Jiro ID: 9000392699101

    Articles in CiNii:1

    • Tunneling Acoustic Microscope (1989)
  • Yugami Jiro ID: 9000401614962

    Articles in CiNii:1

    • Tunneling Acoustic Microscope (1989)
  • 1 / 2
Page Top