Search Results1-8 of  8

  • YUKAWA YOHEI ID: 9000244016550

    Faculty of Systems Engineering, Wakayama University (2013 from CiNii)

    Articles in CiNii:1

    • OLSRにおける迂回路構築法に関する一考察 (モバイルネットワークとアプリケーション) (2013)
  • YUKAWA Yohei ID: 9000005697215

    Department of Electrical and Electronic Engineering, Meiji University (2001 from CiNii)

    Articles in CiNii:2

    • Effect on GaN/Al_<0.17>Ga_<0.83>N and Al_<0.05>Ga_<0.95>N/Al_<0.17>Ga_<0.83>N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy (2000)
    • Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN (2001)
  • YUKAWA Yohei ID: 9000018769995

    Google Inc. (2011 from CiNii)

    Articles in CiNii:1

    • Development of Predictive Input System (2011)
  • Yukawa Yohei ID: 9000006028192

    京大理 (2006 from CiNii)

    Articles in CiNii:2

    • 13pSA-11 A Study for Large Aperture Imaging Air Cherenkov Telescopes (2005)
    • 27aTF-1 Report on the maintenance work and observation of the CANGAROO-III telescopes (2006)
  • Yukawa Yohei ID: 9000258150787

    Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy. (2000)
  • Yukawa Yohei ID: 9000258156088

    Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN. (2001)
  • Yukawa Yohei ID: 9000401694169

    Articles in CiNii:1

    • Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy (2000)
  • Yukawa Yohei ID: 9000401703561

    Articles in CiNii:1

    • Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN (2001)
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