Search Results1-20 of  24

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  • YAMABE Masaki ID: 9000000247682

    Electron Beam Direct Writing Group, Semiconductor Leading Edge Technologies, Inc. (1999 from CiNii)

    Articles in CiNii:1

    • Development of a Simulator for Cell-projection Type Electron Beam Lithography (1999)
  • YAMABE Masaki ID: 9000004966804

    Fujitsu Laboratories Limited (1998 from CiNii)

    Articles in CiNii:2

    • Ta/SiC X-Ray Mask (1995)
    • Mask fabrication techniques using a Ta3Ge X-ray absorber (1998)
  • YAMABE Masaki ID: 9000005598524

    Semiconductor Leading Edge Technologies Inc. (2000 from CiNii)

    Articles in CiNii:7

    • Pattern Fabrication Technique for Ta-Ge Amorphous X-Ray absorber on a SiC Membrane by Inductively Coupled Plasma (1999)
    • Etching Residues of Sputtered Ta Film Using Chlorine-Based Plasma (1998)
    • Pattern Etching of Ta X-ray Mask Absorber on SiC Membrane by Inductively Coupled Plasma (1998)
  • YAMABE Masaki ID: 9000018592843

    ASET (2010 from CiNii)

    Articles in CiNii:1

    • Photomask Data Prioritization Based on VLSI Design Intent and Its Utilization for Mask Manufacturing (2010)
  • YAMABE Masaki ID: 9000107334162

    Semiconductor Leading Edge Technologies Inc. (2001 from CiNii)

    Articles in CiNii:1

    • Influence of Electron Density Distribution at the Electron Source in a Projection Exposure System (2001)
  • Yamabe Masaki ID: 9000020383837

    Department of Applied Physics, Tokyo Institute of Technology (1977 from CiNii)

    Articles in CiNii:1

    • The theoretical estimation of the G-values for the ionization and excitation of thirty-eight gaseous compounds irradiated by 100 keV electrons. (1977)
  • Yamabe Masaki ID: 9000020501867

    Department of Applied Physics, Tokyo Institute of Technology (1978 from CiNii)

    Articles in CiNii:1

    • The absolute rate constants of reaction of hydrogen atoms with several olefins. (1978)
  • Yamabe Masaki ID: 9000252765839

    Advanced Technology Division, Fujitsu Limited (1992 from CiNii)

    Articles in CiNii:1

    • Anomalous Etching Residues of Sputter-Deposited Ta upon Reactive Ion Etching Using Chlorine-Based Plasmas (1992)
  • Yamabe Masaki ID: 9000252798386

    Department of Applied Physics, Tokyo Institute of Technology (1976 from CiNii)

    Articles in CiNii:1

    • A short flash of mercury resonance line at 253,7 NM. (1976)
  • Yamabe Masaki ID: 9000258140210

    Fujitsu Laboratories Ltd., 10–1 Morinosato–Wakamiya, Atsugi 243–01, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Etching Residues of Sputtered Ta Film Using Chlorine-Based Plasma. (1998)
  • Yamabe Masaki ID: 9000258142466

    Fujitsu Laboratories Ltd., 10–1 Morinosato–Wakamiya, Atsugi 243–0197, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Pattern Etching of Ta X-ray Mask Absorber on SiC Membrane by Inductively Coupled Plasma. (1998)
  • Yamabe Masaki ID: 9000258146714

    Fujitsu Laboratories Ltd., 10–1 Morinosato–Wakamiya, Atsugi 243–0197, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Pattern Fabrication Technique for Ta-Ge Amorphous X-Ray Absorber on a SiC Membrane by Inductively Coupled Plasma. (1999)
  • Yamabe Masaki ID: 9000258149681

    Semiconductor Leading Edge Technologies Inc., Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan (2000 from CiNii)

    Articles in CiNii:1

    • An Improved Electron Scattering Simulation at the Mask in a Projection Lithography System. (2000)
  • Yamabe Masaki ID: 9000258155402

    Semiconductor Leading Edge Technologies Inc., Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Influence of Electron Density Distribution at the Electron Source in a Projection Exposure System. (2001)
  • Yamabe Masaki ID: 9000392733259

    Articles in CiNii:1

    • Anomalous Etching Residues of Sputter-Deposited Ta upon Reactive Ion Etching Using Chlorine-Based Plasmas (1992)
  • Yamabe Masaki ID: 9000401631631

    Articles in CiNii:1

    • Anomalous Etching Residues of Sputter-Deposited Ta upon Reactive Ion Etching Using Chlorine-Based Plasmas (1992)
  • Yamabe Masaki ID: 9000401659791

    Articles in CiNii:1

    • Precise Stress Control of Ta Absorber using Low Stress Alumina Etching Mask for X-Ray Mask Fabrication (1996)
  • Yamabe Masaki ID: 9000401677396

    Articles in CiNii:1

    • Etching Residues of Sputtered Ta Film Using Chlorine-Based Plasma (1998)
  • Yamabe Masaki ID: 9000401678247

    Articles in CiNii:1

    • Pattern Etching of Ta X-ray Mask Absorber on SiC Membrane by Inductively Coupled Plasma (1998)
  • Yamabe Masaki ID: 9000401679768

    Articles in CiNii:1

    • 1999-04-15 (1999)
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