Search Results1-20 of  55

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  • Yamada Akimasa ID: 9000019129192

    Articles in CiNii:1

    • Fabrication and Characterization of Cu(In,Ga)(S,Se)₂-Based Solar Cells (Special Issue : Photovoltaic Science and Engineering) （2012）
  • Yamada Akimasa ID: 9000241877673

    Articles in CiNii:1

    • Highly Efficient Cu(In,Ga)Se₂ Thin-Film Submodule Fabricated Using a Three-Stage Process （2013）
  • Yamada Akimasa ID: 9000403857510

    Articles in CiNii:1

    • Na-induced variations in the structural, optical, and electrical properties of Cu(In,Ga)Se2 thin films （2009）
  • YAMADA Akimasa ID: 9000002883570

    Articles in CiNii:4

    • A Systematic Method for Determining the Crystal Orientation with the Laue Pattern （1975）
    • 大出力CO2レ-ザPVD法による硬質セラミック膜形成に関する研究 （1991）
    • A Direct Observation of Abrasive Grains Remained on Polished Surface of Si Single Crystal with EMX （1968）
  • YAMADA Akimasa ID: 9000002886276

    Electrotechnical laboratory （1994 from CiNii）

    Articles in CiNii:3

    • Energy of Deformation and Frecture by Indentation onto Solid （1983）
    • The Power and Fascination of Finance(The Life and Work of Financial Engineers)(Special Issue on Toward the 2lst Century) （1990）
    • Fabrication of New-Type Semiconductors Development of New Ion Beam Technology:Combined Ion Beam and Molecular Beam Epitaxy(CIBMBE) Method （1994）
  • YAMADA Akimasa ID: 9000002958610

    電子技術総合研究所 （1990 from CiNii）

    Articles in CiNii:1

    • On the Publication of the Special Issue （1990）
  • YAMADA Akimasa ID: 9000004777393

    Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST) （2011 from CiNii）

    Articles in CiNii:21

    • Heteroepitaxial growth and properties of CuInSe_2 films （1997）
    • Molecular Beam Epitaxial Growth of Semiconductor-Grade ZnO Films （2001）
    • ZnO Films Grown on Si substrate by Radical Source MBE （2002）
  • YAMADA Akimasa ID: 9000107335711

    National Institute of Advanced Industrial and Science Technology （2003 from CiNii）

    Articles in CiNii:1

    • Estimation and Correction Procedure for the Effects of Surface Roughness on Electron Probe Microanalysis （2003）
  • YAMADA Akimasa ID: 9000107338606

    Optoelectronic Materials and Devices Group, Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) （2004 from CiNii）

    Articles in CiNii:1

    • Improved External Efficiency InGaN-Based Light-Emitting Diodes with Transparent Conductive Ga-Doped ZnO as p-Electrodes （2004）
  • YAMADA Akimasa ID: 9000107343073

    Articles in CiNii:1

    • Effects of Sodium on CuIn_3Se_5 Thin Films （1999）
  • YAMADA Akimasa ID: 9000254751637

    正会員 電子技術総合研究所 （1982 from CiNii）

    Articles in CiNii:1

    • Beam Profile Measurement of High Power CO<SUB>2</SUB> Laser （1982）
  • YAMADA Akimasa ID: 9000259324598

    Division of Cardiology, Department of Medicine, Nihon University School of Medicine （2013 from CiNii）

    Articles in CiNii:1

    • A Case of Idiopathic Ventricular Fibrillation Associated with J wave Syndrome （2013）
  • Yamada Akimasa ID: 9000083476086

    Articles in CiNii:1

    • Time-Resolved Microphotoluminescence Study of Cu(In,Ga)Se2 （2011）
  • Yamada Akimasa ID: 9000252984658

    Electrotechnical Laboratory （1993 from CiNii）

    Articles in CiNii:1

    • The Initial Growth Stage of the InAs Quantum Well Structures on Variously Oriented GaAs Substrates （1993）
  • Yamada Akimasa ID: 9000258121291

    Electrotechnical Laboratory, MITI, 1–1–4 Umezono, Tsukuba, Ibaraki 305 （1994 from CiNii）

    Articles in CiNii:1

    • Sharp Optical Emission from CuInSe2 Thin Films Grown by Molecular Beam Epitaxy. （1994）
  • Yamada Akimasa ID: 9000258144985

    Optoelectronics Division, Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305–8568, Japan （1999 from CiNii）

    Articles in CiNii:1

    • Electron Probe Microanalysis of Second Phases via Acceleration Voltage Dependence. （1999）
  • Yamada Akimasa ID: 9000258147512

    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305–8568, Japan （1999 from CiNii）

    Articles in CiNii:1

    • Deposition of Ge1-xCx Alloy on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxial Method. （1999）
  • Yamada Akimasa ID: 9000258148546

    Optoelectronics Division, Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305–8568, Japan （1999 from CiNii）

    Articles in CiNii:1

    • Effects of Sodium on CuIn3Se5 Thin Films. （1999）
  • Yamada Akimasa ID: 9000258154210

    Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan （2001 from CiNii）

    Articles in CiNii:1

    • Growth of Undoped ZnO Films with Improved Electrical Properties by Radical Source Molecular Beam Epitaxy. （2001）
  • Yamada Akimasa ID: 9000258163640

    Photonic Research Institute, National Institute of Advance Industrial Science & Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan （2002 from CiNii）

    Articles in CiNii:1

    • Observation of Exciton-Polariton Emissions from a ZnO Epitaxial Film on the a-Face of Sapphire Grown by Radical-Source Molecular-Beam-Epitaxy. （2002）
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