Search Results1-20 of  54

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  • Yamada Akimasa ID: 9000019129192

    Articles in CiNii:1

    • Fabrication and Characterization of Cu(In,Ga)(S,Se)₂-Based Solar Cells (Special Issue : Photovoltaic Science and Engineering) (2012)
  • Yamada Akimasa ID: 9000241877673

    Articles in CiNii:1

    • Highly Efficient Cu(In,Ga)Se₂ Thin-Film Submodule Fabricated Using a Three-Stage Process (2013)
  • Yamada Akimasa ID: 9000403857510

    Articles in CiNii:1

    • Na-induced variations in the structural, optical, and electrical properties of Cu(In,Ga)Se2 thin films (2009)
  • YAMADA Akimasa ID: 9000002883570

    Articles in CiNii:4

    • A Systematic Method for Determining the Crystal Orientation with the Laue Pattern (1975)
    • 大出力CO2レ-ザPVD法による硬質セラミック膜形成に関する研究 (1991)
    • A Direct Observation of Abrasive Grains Remained on Polished Surface of Si Single Crystal with EMX (1968)
  • YAMADA Akimasa ID: 9000002886276

    Electrotechnical laboratory (1994 from CiNii)

    Articles in CiNii:3

    • Energy of Deformation and Frecture by Indentation onto Solid (1983)
    • The Power and Fascination of Finance(The Life and Work of Financial Engineers)(Special Issue on Toward the 2lst Century) (1990)
    • Fabrication of New-Type Semiconductors Development of New Ion Beam Technology:Combined Ion Beam and Molecular Beam Epitaxy(CIBMBE) Method (1994)
  • YAMADA Akimasa ID: 9000002958610

    電子技術総合研究所 (1990 from CiNii)

    Articles in CiNii:1

    • On the Publication of the Special Issue (1990)
  • YAMADA Akimasa ID: 9000004777393

    Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST) (2011 from CiNii)

    Articles in CiNii:21

    • Heteroepitaxial growth and properties of CuInSe_2 films (1997)
    • Molecular Beam Epitaxial Growth of Semiconductor-Grade ZnO Films (2001)
    • ZnO Films Grown on Si substrate by Radical Source MBE (2002)
  • YAMADA Akimasa ID: 9000107335711

    National Institute of Advanced Industrial and Science Technology (2003 from CiNii)

    Articles in CiNii:1

    • Estimation and Correction Procedure for the Effects of Surface Roughness on Electron Probe Microanalysis (2003)
  • YAMADA Akimasa ID: 9000107338606

    Optoelectronic Materials and Devices Group, Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) (2004 from CiNii)

    Articles in CiNii:1

    • Improved External Efficiency InGaN-Based Light-Emitting Diodes with Transparent Conductive Ga-Doped ZnO as p-Electrodes (2004)
  • YAMADA Akimasa ID: 9000107343073

    Articles in CiNii:1

    • Effects of Sodium on CuIn_3Se_5 Thin Films (1999)
  • YAMADA Akimasa ID: 9000254751637

    正会員 電子技術総合研究所 (1982 from CiNii)

    Articles in CiNii:1

    • Beam Profile Measurement of High Power CO<SUB>2</SUB> Laser (1982)
  • YAMADA Akimasa ID: 9000259324598

    Division of Cardiology, Department of Medicine, Nihon University School of Medicine (2013 from CiNii)

    Articles in CiNii:1

    • A Case of Idiopathic Ventricular Fibrillation Associated with J wave Syndrome (2013)
  • Yamada Akimasa ID: 9000083476086

    Articles in CiNii:1

    • Time-Resolved Microphotoluminescence Study of Cu(In,Ga)Se2 (2011)
  • Yamada Akimasa ID: 9000252984658

    Electrotechnical Laboratory (1993 from CiNii)

    Articles in CiNii:1

    • The Initial Growth Stage of the InAs Quantum Well Structures on Variously Oriented GaAs Substrates (1993)
  • Yamada Akimasa ID: 9000258121291

    Electrotechnical Laboratory, MITI, 1–1–4 Umezono, Tsukuba, Ibaraki 305 (1994 from CiNii)

    Articles in CiNii:1

    • Sharp Optical Emission from CuInSe2 Thin Films Grown by Molecular Beam Epitaxy. (1994)
  • Yamada Akimasa ID: 9000258144985

    Optoelectronics Division, Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305–8568, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Electron Probe Microanalysis of Second Phases via Acceleration Voltage Dependence. (1999)
  • Yamada Akimasa ID: 9000258147512

    Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305–8568, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Deposition of Ge1-xCx Alloy on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxial Method. (1999)
  • Yamada Akimasa ID: 9000258148546

    Optoelectronics Division, Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba, Ibaraki 305–8568, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Effects of Sodium on CuIn3Se5 Thin Films. (1999)
  • Yamada Akimasa ID: 9000258154210

    Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Growth of Undoped ZnO Films with Improved Electrical Properties by Radical Source Molecular Beam Epitaxy. (2001)
  • Yamada Akimasa ID: 9000258163640

    Photonic Research Institute, National Institute of Advance Industrial Science & Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan (2002 from CiNii)

    Articles in CiNii:1

    • Observation of Exciton-Polariton Emissions from a ZnO Epitaxial Film on the a-Face of Sapphire Grown by Radical-Source Molecular-Beam-Epitaxy. (2002)
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