Search Results1-20 of  54

  • 1 / 3
  • Yamada Keisaku ID: 9000403864362

    Articles in CiNii:1

    • Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors (2011)
  • Yamada Keisaku ID: 9000403864840

    Articles in CiNii:1

    • Effects of corner angle of trapezoidal and triangular channel cross-sections on electrical performance of silicon nanowire field-effect transistors with semi gate-around structure (2011)
  • Yamada Keisaku ID: 9000403864964

    Articles in CiNii:1

    • Electrical characteristics of asymmetrical silicon nanowire field-effect transistors (2011)
  • Yamada Keisaku ID: 9000403869685

    Articles in CiNii:1

    • Photoluminescence characterization in silicon nanowire fabricated by thermal oxidation of nano-scale Si fin structure (2014)
  • Yamada Keisaku ID: 9000403912461

    Articles in CiNii:1

    • Extraction of additional interfacial states of silicon nanowire field-effect transistors (2011)
  • YAMADA Keisaku ID: 9000001353852

    Univ. of Tsukuba (2007 from CiNii)

    Articles in CiNii:3

    • Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates : A Theoretical Approach (2004)
    • High-resolution RBS analysis of Si-dielectrics interfaces (2006)
    • Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm (2007)
  • YAMADA Keisaku ID: 9000002169386

    Nanotechnology Research Laboratories, Waseda University (2005 from CiNii)

    Articles in CiNii:1

    • Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties (2005)
  • YAMADA Keisaku ID: 9000002172802

    Waseda Univ. (2006 from CiNii)

    Articles in CiNii:1

    • Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation (2006)
  • YAMADA Keisaku ID: 9000002979483

    Casting Research Laborator, Waseda University (1980 from CiNii)

    Articles in CiNii:7

    • 磁場走査型質量分析計における微少イオン流の測定 (1978)
    • PS-9 1600℃における溶融鉄中のりんの活量におよぼす第三元素の影響(製錬 I, 日本鉄鋼協会 第 95 回(春季)講演大会) (1978)
    • 173 1600℃における溶鉄中のりんの溶解の自由エネルギーの測定(製鋼基礎・造塊, 製鋼, 日本鉄鋼協会 第 98 回(秋季)講演大会) (1979)
  • YAMADA Keisaku ID: 9000004820308

    The author is with Display Materials and Devices Research laboratory, Corporate Research and Development Center, Toshiba Corp. (2000 from CiNii)

    Articles in CiNii:1

    • Characteristics of Low-Temperature-Processed a-Si TFT for Plastic Substrates (2000)
  • YAMADA Keisaku ID: 9000107346394

    Nanomaterials Lab., National Institute for Materials Science (2004 from CiNii)

    Articles in CiNii:1

    • Characterization of Hf_<0.3>Al_<0.7>O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams (2004)
  • YAMADA Keisaku ID: 9000107377211

    Nanotechnology Research Laboratories, Waseda University (2005 from CiNii)

    Articles in CiNii:1

    • Role of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics for Termination of Local Current Leakage Paths (2005)
  • YAMADA Keisaku ID: 9000107378981

    Graduate School of Pure and Applied Sciences, University of Tsukuba (2011 from CiNii)

    Articles in CiNii:1

    • Experimental Characterization of Quasi-Fermi Potential Profile in the Channel of a Silicon Nanowire Field-Effect Transistor with Four-Terminal Geometry (2011)
  • YAMADA Keisaku ID: 9000252931110

    Formerly Casting Research Laboratory, Waseda University. Now at Toshiba Research and Development Center, Toshiba Corporation (1982 from CiNii)

    Articles in CiNii:1

    • The Standard Free Energies of Dissolution of Phosphorus Gases in Liquid Iron (1982)
  • YAMADA Keisaku ID: 9000252931301

    The Casting Research Laboratory, Waseda University|Integrated Circuit Laboratory, Toshiba Corporation (1983 from CiNii)

    Articles in CiNii:1

    • Effect of Dilute Concentrations of Si, Al, Ti, V, Cr, Co, Ni, Nb and Mo on the Activity Coefficient of P in Liquid Iron (1983)
  • YAMADA Keisaku ID: 9000326263227

    Nanomaterials Laboratory, National Institute for Materials Science|Nano Technology Research Laboratory, Waseda University (2005 from CiNii)

    Articles in CiNii:1

    • Characterization of Open Spaces in High-.KAPPA. Materials by Monoenergetic Positron Beams (2005)
  • YAMADA Keisaku ID: 9000350605918

    Articles in CiNii:1

    • Mass Spectrometric Determination of Activities of Phosphorus in Liquid Fe-P-Si, Al, Ti, V, Cr, Co, Ni, Nb, and Mo Alloys (1979)
  • YAMADA Keisaku ID: 9000350605958

    Articles in CiNii:1

    • Mass Spectrometric Determination of Activity of Phosphorus in Liquid Fe-P Alloy (1979)
  • YAMADA Keisaku ID: 9000350634060

    Articles in CiNii:1

    • The Standard Free Energies of Dissolution of Phosphorus Gases in Liquid Iron (1980)
  • YAMADA Keisaku ID: 9000350634394

    Casting Research Laborator, Waseda University (1980 from CiNii)

    Articles in CiNii:1

    • Mass Spectrometric Study of the Activity in Liquid Fe-Si Alloys at 1 600°C (1980)
  • 1 / 3
Page Top