Search Results1-18 of  18

  • YAMANE Yasuro ID: 9000001506294

    NTT Photonics Laboratories （2001 from CiNii）

    Articles in CiNii:1

    • DC Characteristics of InP HBTs under High-Temperature and Bias Stress （2001）
  • YAMANE Yasuro ID: 9000004766792

    NTT Photonics Laboratories （2001 from CiNii）

    Articles in CiNii:3

    • The Analysis of the Frequency Dispersion in Drain Conductance of InAlAs/InGaAs HEMT : The Explanation by Impact Ionization Model （2001）
    • The Analysis of the Frequency Dispersion in Drain Conductance of InAlAs/InGaAs HEMT : The Explanation by Impact Ionization Model （2001）
    • The Analysis of the Frequency Dispersion in Drain Conductance of InAlAs/InGaAs HEMT : The Explanation by Impact Ionization Model （2001）
  • YAMANE Yasuro ID: 9000004777929

    NTT System Electronics Laboratories （2008 from CiNii）

    Articles in CiNii:15

    • Symmetric and Asymmetric InGaP/InGaAs/GaAs HMESFETs and Its Application to Millimeter-wave Amplifier （1997）
    • Fabrication Technology for ion-implanted 0.1-μm Au/WSiN Gate GaAs MESFET-IC （1993）
    • 0.1-μm Au/WSiN Gate GaAs MESFET's Having new BP-LDD structure （1994）
  • YAMANE Yasuro ID: 9000004781902

    NTT Electronics Corporation （2007 from CiNii）

    Articles in CiNii:5

    • Frequency Dispersion in Drain Conductance of InAlAs/InGaAs HEMTs and Its Correlation with Impact Ionization （2000）
    • High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy （2007）
    • The InP-HEMT IC Technology for 40-Gbit/s Optical Communications （2001）
  • YAMANE Yasuro ID: 9000004817501

    NTT System Electronics Laboratories （1998 from CiNii）

    Articles in CiNii:1

    • Symmetric and Asymmetric InGaP/InGaAs/GaAs Heterostructure MESFET's and Their Application to V-Band Amplifiers （1998）
  • YAMANE Yasuro ID: 9000004818215

    NTT Photonics Laboratories （1999 from CiNii）

    Articles in CiNii:1

    • InP-Based Lightwave Communication ICs for 40Gbit/s and Beyond （1999）
  • YAMANE Yasuro ID: 9000004820599

    NTT Photonics Laboratories （2000 from CiNii）

    Articles in CiNii:1

    • 50-Gbit/s Demultiplexer IC Module Using InAlAs/InGaAs/InP HEMTs （2000）
  • YAMANE Yasuro ID: 9000004821901

    NTT Photonics Laboratories （2000 from CiNii）

    Articles in CiNii:1

    • 70-Gbit/s Multiplexer and 50-Gbit/s Decision IC Modules Using InAlAs/InGaAs/InP HEMTs （2000）
  • YAMANE Yasuro ID: 9000107335007

    NTT Photonics Laboratories （2001 from CiNii）

    Articles in CiNii:1

    • Frequency Dispersion in Drain Conductance of InAlAs/InGaAs Hight-Electron Mobility Transisters (HEMTs) and Its Relationship with Impact Ionization （2001）
  • Yamane Yasuro ID: 9000004746358

    NTT Electronics （2007 from CiNii）

    Articles in CiNii:21

    • Low-Power Switch Matrix ICs Using InP HEMTs （2005）
    • A Miniaturized, Wideband 8x8 Switch Matrix MMIC Using InP HEMTs （2007）
    • Bias acceleration of drain resistance increase in InP-based HEMTs and lifetime enhancement by low-bias design of ICs （2003）
  • Yamane Yasuro ID: 9000252952333

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation （1982 from CiNii）

    Articles in CiNii:1

    • Annealing Behavior of Damage Introduced in GaAs by Reactive Ion Beam Etching （1982）
  • Yamane Yasuro ID: 9000252953795

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation （1983 from CiNii）

    Articles in CiNii:1

    • Degradation-Free P-CVD SiN Deposition on GaAs FETs （1983）
  • Yamane Yasuro ID: 9000392688776

    Articles in CiNii:1

    • Degradation-Free P-CVD SiN Deposition on GaAs FETs （1983）
  • Yamane Yasuro ID: 9000392690772

    Articles in CiNii:1

    • Annealing Behavior of Damage Introduced in GaAs by Reactive Ion Beam Etching （1982）
  • Yamane Yasuro ID: 9000401591757

    Articles in CiNii:1

    • Annealing Behavior of Damage Introduced in GaAs by Reactive Ion Beam Etching （1982）
  • Yamane Yasuro ID: 9000401593695

    Articles in CiNii:1

    • Degradation-Free P-CVD SiN Deposition on GaAs FETs （1983）
  • Yamane Yasuro ID: 9000401697953

    Articles in CiNii:1

    • Frequency Dispersion in Drain Conductance of InAlAs/InGaAs Hight-Electron Mobility Transisters (HEMTs) and Its Relationship with Impact Ionization （2001）
  • Yamane Yasuro ID: 9000401768982

    Articles in CiNii:1

    • 2008-04-25 （2008）
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