Search Results1-18 of  18

  • YAMANE Yasuro ID: 9000001506294

    NTT Photonics Laboratories (2001 from CiNii)

    Articles in CiNii:1

    • DC Characteristics of InP HBTs under High-Temperature and Bias Stress (2001)
  • YAMANE Yasuro ID: 9000004766792

    NTT Photonics Laboratories (2001 from CiNii)

    Articles in CiNii:3

    • The Analysis of the Frequency Dispersion in Drain Conductance of InAlAs/InGaAs HEMT : The Explanation by Impact Ionization Model (2001)
    • The Analysis of the Frequency Dispersion in Drain Conductance of InAlAs/InGaAs HEMT : The Explanation by Impact Ionization Model (2001)
    • The Analysis of the Frequency Dispersion in Drain Conductance of InAlAs/InGaAs HEMT : The Explanation by Impact Ionization Model (2001)
  • YAMANE Yasuro ID: 9000004777929

    NTT System Electronics Laboratories (2008 from CiNii)

    Articles in CiNii:15

    • Symmetric and Asymmetric InGaP/InGaAs/GaAs HMESFETs and Its Application to Millimeter-wave Amplifier (1997)
    • Fabrication Technology for ion-implanted 0.1-μm Au/WSiN Gate GaAs MESFET-IC (1993)
    • 0.1-μm Au/WSiN Gate GaAs MESFET's Having new BP-LDD structure (1994)
  • YAMANE Yasuro ID: 9000004781902

    NTT Electronics Corporation (2007 from CiNii)

    Articles in CiNii:5

    • Frequency Dispersion in Drain Conductance of InAlAs/InGaAs HEMTs and Its Correlation with Impact Ionization (2000)
    • High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy (2007)
    • The InP-HEMT IC Technology for 40-Gbit/s Optical Communications (2001)
  • YAMANE Yasuro ID: 9000004817501

    NTT System Electronics Laboratories (1998 from CiNii)

    Articles in CiNii:1

    • Symmetric and Asymmetric InGaP/InGaAs/GaAs Heterostructure MESFET's and Their Application to V-Band Amplifiers (1998)
  • YAMANE Yasuro ID: 9000004818215

    NTT Photonics Laboratories (1999 from CiNii)

    Articles in CiNii:1

    • InP-Based Lightwave Communication ICs for 40Gbit/s and Beyond (1999)
  • YAMANE Yasuro ID: 9000004820599

    NTT Photonics Laboratories (2000 from CiNii)

    Articles in CiNii:1

    • 50-Gbit/s Demultiplexer IC Module Using InAlAs/InGaAs/InP HEMTs (2000)
  • YAMANE Yasuro ID: 9000004821901

    NTT Photonics Laboratories (2000 from CiNii)

    Articles in CiNii:1

    • 70-Gbit/s Multiplexer and 50-Gbit/s Decision IC Modules Using InAlAs/InGaAs/InP HEMTs (2000)
  • YAMANE Yasuro ID: 9000107335007

    NTT Photonics Laboratories (2001 from CiNii)

    Articles in CiNii:1

    • Frequency Dispersion in Drain Conductance of InAlAs/InGaAs Hight-Electron Mobility Transisters (HEMTs) and Its Relationship with Impact Ionization (2001)
  • Yamane Yasuro ID: 9000004746358

    NTT Electronics (2007 from CiNii)

    Articles in CiNii:21

    • Low-Power Switch Matrix ICs Using InP HEMTs (2005)
    • A Miniaturized, Wideband 8x8 Switch Matrix MMIC Using InP HEMTs (2007)
    • Bias acceleration of drain resistance increase in InP-based HEMTs and lifetime enhancement by low-bias design of ICs (2003)
  • Yamane Yasuro ID: 9000252952333

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1982 from CiNii)

    Articles in CiNii:1

    • Annealing Behavior of Damage Introduced in GaAs by Reactive Ion Beam Etching (1982)
  • Yamane Yasuro ID: 9000252953795

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1983 from CiNii)

    Articles in CiNii:1

    • Degradation-Free P-CVD SiN Deposition on GaAs FETs (1983)
  • Yamane Yasuro ID: 9000392688776

    Articles in CiNii:1

    • Degradation-Free P-CVD SiN Deposition on GaAs FETs (1983)
  • Yamane Yasuro ID: 9000392690772

    Articles in CiNii:1

    • Annealing Behavior of Damage Introduced in GaAs by Reactive Ion Beam Etching (1982)
  • Yamane Yasuro ID: 9000401591757

    Articles in CiNii:1

    • Annealing Behavior of Damage Introduced in GaAs by Reactive Ion Beam Etching (1982)
  • Yamane Yasuro ID: 9000401593695

    Articles in CiNii:1

    • Degradation-Free P-CVD SiN Deposition on GaAs FETs (1983)
  • Yamane Yasuro ID: 9000401697953

    Articles in CiNii:1

    • Frequency Dispersion in Drain Conductance of InAlAs/InGaAs Hight-Electron Mobility Transisters (HEMTs) and Its Relationship with Impact Ionization (2001)
  • Yamane Yasuro ID: 9000401768982

    Articles in CiNii:1

    • 2008-04-25 (2008)
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