Search Results1-16 of  16

  • Yang Hong-Seon ID: 9000024933620

    Articles in CiNii:1

    • Incorporation effect of thin Al2O3 layers on ZrO2-Al2O3 nanolaminates in a composite oxide-high-κ-oxide stack for floating-gate flash memory devices (Special issue: Solid state devices and materials) (2007)
  • YANG Hong-Seon ID: 9000001496517

    Memory R&D Division, Hynix Semiconductor Inc. (2006 from CiNii)

    Articles in CiNii:5

    • Degradation of Nitride/W/WN_x/Poly-Si Gate Stack by Post-Thermal Processes (2005)
    • Effect of Post Thermal Processes on Nitride/W/WN_x/poly-Si Gate Stack (2004)
    • Diffusion Barrier Characteristics of TiSix/TiN for Tungsten Dual Poly Gate in DRAM (2006)
  • YANG Hong-Seon ID: 9000006838111

    Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University (2010 from CiNii)

    Articles in CiNii:4

    • Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation (2009)
    • Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer (2010)
    • Recessed Channel Dual Gate Single Electron Transistors (RCDG)-SETs) for room temperature operation (2008)
  • YANG Hong-Seon ID: 9000107346162

    Memory Research and Development Division, Hynix Semiconductor, Incorporation (2004 from CiNii)

    Articles in CiNii:1

    • Physical and Electrical Characteristics of Physical Vapor-Deposited Tungsten for Bit Line Process (2004)
  • YANG Hong-Seon ID: 9000107389453

    Memory R&D Division, Hynix Semiconductor Inc. (2004 from CiNii)

    Articles in CiNii:1

    • Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide (2004)
  • YANG Hong-Seon ID: 9000107389462

    Memory R&D Division, Hynix Semiconductor Inc. (2004 from CiNii)

    Articles in CiNii:1

    • Impact of In Situ NH_3 Preannealing on Sub-100nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation (2004)
  • Yang Hong-Seon ID: 9000024977162

    Articles in CiNii:1

    • Silicon-based dual-gate single-electron transistors for logic applications (2009)
  • Yang Hong-Seon ID: 9000058700440

    Articles in CiNii:1

    • Roles of Ti, TiN, and WN as an Interdiffusion Barrier for Tungsten Dual Polygate Stack in Memory Devices (2007)
  • Yang Hong-Seon ID: 9000069673770

    Articles in CiNii:1

    • Gate Oxide Reliability Characterization of Tungsten Polymetal Gate with Low-Contact-Resistive WSix/WN Diffusion Barrier in Memory Devices (2007)
  • Yang Hong-Seon ID: 9000258171147

    Memory Research and Development Division, Hynix Semiconductor, Incorporation (2004 from CiNii)

    Articles in CiNii:1

    • Physical and Electrical Characteristics of Physical Vapor-Deposited Tungsten for Bit Line Process (2004)
  • Yang Hong-Seon ID: 9000258180595

    Memory R&D Division, Hynix Semiconductor Inc. (2005 from CiNii)

    Articles in CiNii:1

    • Degradation of Nitride/W/WNx/Poly-Si Gate Stack by Post-Thermal Processes (2005)
  • Yang Hong-Seon ID: 9000401731295

    Articles in CiNii:1

    • Physical and Electrical Characteristics of Physical Vapor-Deposited Tungsten for Bit Line Process (2004)
  • Yang Hong-Seon ID: 9000401735614

    Articles in CiNii:1

    • Degradation of Nitride/W/WNx/Poly-Si Gate Stack by Post-Thermal Processes (2005)
  • Yang Hong-Seon ID: 9000401758063

    Articles in CiNii:1

    • 2007-04-24 (2007)
  • Yang Hong-Seon ID: 9000401768828

    Articles in CiNii:1

    • 2008-04-25 (2008)
  • Yang Hong-Seon ID: 9000401787160

    Articles in CiNii:1

    • Dual-Gate Single-Electron Transistor with Silicon Nano Wire Channel and Surrounding Side Gates (2010)
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