Search Results1-20 of  79

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  • YASUI Kanji ID: 9000404508943

    Department of Electrical Engineering, Nagaoka University of Technology (2005 from CiNii)

    Articles in CiNii:1

    • Heteroepitaxial growth of SiC using organosilicon compounds (2005)
  • YASUI KANJI ID: 9000256147426

    Department of Surgery, Tango Central Hospital (1976 from CiNii)

    Articles in CiNii:1

    • A CLINICAL STUDY OF CEPHACETRILE IN THE TREATMENT FOR ORTHOPAEDIC INFECTIONS (1976)
  • YASUI Kanji ID: 1000070126481

    Nagaoka University of Technology Dept. Elec. (2014 from CiNii)

    Articles in CiNii:127

    • Initial Stage of SiC Growth on Si Surface Using Dimethylsilane (2001)
    • STM Observation of the Surface Structures Formed on the Initial Stage of SiC Growth Using Monomethylsilane (2003)
    • Reinterpretation of Initial Stage of SiC Growth and Application to CVD Method using Organosilicon Compounds (2003)
  • YASUI Kanji ID: 9000001626728

    Department of Electrical Engineering, Nagaoka University of Technology (2005 from CiNii)

    Articles in CiNii:1

    • (100)-Oriented 3C-SiC Polycrystalline Film Grown on SiO_2 by Hot-Mesh Chemical Vapor Deposition Using Monomethylsilane and Hydrogen (2005)
  • YASUI Kanji ID: 9000018156659

    Faculty of Engineering, Nagaoka University of Technology (2009 from CiNii)

    Articles in CiNii:1

    • Hydrogen Plasma Annealing of ZnO Films Deposited by Magnetron Sputtering with Third Electrode (2009)
  • YASUI Kanji ID: 9000020231966

    Technological University of Nagaoka (1988 from CiNii)

    Articles in CiNii:1

    • Influence of carbon addition on the properties of a-SiN films. (1988)
  • YASUI Kanji ID: 9000020613789

    Articles in CiNii:1

    • Preparation of Si<sub>3</sub>N<sub>4</sub>-SiC Films by Plasma CVD (1986)
  • YASUI Kanji ID: 9000107324796

    Articles in CiNii:1

    • Structural evaluation of Ge, SiC nanodots formed on Si based on hemispherical-dot model (2009)
  • YASUI Kanji ID: 9000107325212

    Articles in CiNii:1

    • Lowering of the AZO film's resisitivity by hydrogen radical annealing (2009)
  • YASUI Kanji ID: 9000107325654

    Department of Electrical Engineering, Graduate School of Engineering, Nagaoka University of Technology (2005 from CiNii)

    Articles in CiNii:1

    • Evaluation of the Correspondence between Carbon Incorporation and the Development of c(4×4) Domains (2005)
  • YASUI Kanji ID: 9000107355204

    Department of Electrical, Electronic and Information Engineering, Nagaoka University of Technology (2005 from CiNii)

    Articles in CiNii:1

    • Improvement in Crystallinity of ZnO Films Prepared by rf Magnetron Sputtering with Grid Electrode (2005)
  • YASUI Kanji ID: 9000107355963

    Department of Electrical Engineering, Nagaoka University of Technology (1997 from CiNii)

    Articles in CiNii:1

    • Effect of Plasma Parameter Control on the Growth of Zincblende Type GaN Films by ECR Plasma Enhanced Metalorganic Chemical Vapor Deposition (1997)
  • YASUI Kanji ID: 9000107392007

    Department of Electrical, Electronic and Information Engineering, Nagaoka University of Technology (2005 from CiNii)

    Articles in CiNii:1

    • Low-Temperature Heteroepitaxial Growth of SiC on (100) Si Using Hot-Mesh Chemical Vapor Deposition (2005)
  • YASUI Kanji ID: 9000244904818

    Faculty of Engineering Nagaoka University of Technology (2013 from CiNii)

    Articles in CiNii:1

    • Effect of N_2O doping on the properties of ZnO thin films grown using high-energy H_2O generated by a catalytic reaction (2013)
  • YASUI Kanji ID: 9000244926587

    Faculty of Engineering Nagaoka University of Technology (2013 from CiNii)

    Articles in CiNii:1

    • Effect of N_2O doping on the properties of ZnO thin films grown using high-energy H_2O generated by a catalytic reaction (2013)
  • YASUI Kanji ID: 9000244927246

    Faculty of Engineering Nagaoka University of Technology (2013 from CiNii)

    Articles in CiNii:1

    • Effect of N_2O doping on the properties of ZnO thin films grown using high-energy H_2O generated by a catalytic reaction (2013)
  • YASUI Kanji ID: 9000251015405

    Faculty of Engineering, Nagaoka University of Technology (2013 from CiNii)

    Articles in CiNii:1

    • Crystalline structure of ZnO thin films grown on a-plane sapphire substrates using high-energy H_2O produced by a Pt-catalyzed H_2-O_2 reaction (2013)
  • YASUI Kanji ID: 9000255678979

    Department of Electrical Engineering,Nagaoka University of Technology (2013 from CiNii)

    Articles in CiNii:1

    • Controlling group velocity of electromagnetic waves in a metamaterial mimicking electromagnetically induced transparency (2013)
  • YASUI Kanji ID: 9000257862970

    Department of Electrical Engineering, Nagaoka University of Technology (2011 from CiNii)

    Articles in CiNii:1

    • New Double-sided Patterning Process Using a Dilute Hydrochloric Acid Solution to Fabricate Stacked Intrinsic Josephson Junctions Inside Bi2Sr2CaCu2O8+x Single Crystals (2011)
  • YASUI Kanji ID: 9000257982388

    Department of Electrical Engineering, Nagaoka University of Technology (2001 from CiNii)

    Articles in CiNii:1

    • Initial Stage of SiC Growth on Si Surface Using Dimethylsilane. (2001)
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