Search Results1-17 of  17

  • YOSHINOUCHI Atsushi ID: 9000005559138

    Central Research Laboratories, SHARP Corporation (1994 from CiNii)

    Articles in CiNii:1

    • Formation of Sources/Drains Using Self-Activation Technique on Polysilicon Thin Film Transistors (1994)
  • YOSHINOUCHI Atsushi ID: 9000016800927

    IHI Corporation (2008 from CiNii)

    Articles in CiNii:1

    • A method for an intracavity green laser with high-pulse-energy operation (2008)
  • YOSHINOUCHI Atsushi ID: 9000107350870

    Products Development Center, Ishikawajima-Harima Heavy Industries Co., Ltd. (2007 from CiNii)

    Articles in CiNii:1

    • Pulsed Green-Laser Annealing for Single-Crystalline Silicon Film Transferred onto Silicon wafer and Non-alkaline Glass by Hydrogen-Induced Exfoliation (2007)
  • YOSHINOUCHI Atsushi ID: 9000257903691

    Quantum Applied Engineering Department, IHI Corporation Yokohama Engineering Center, 1, Shinnakahara-cho, Isogo-ku, Yokohama 235-5801 (2008 from CiNii)

    Articles in CiNii:1

    • High Pulse-Energy Green Laser for Laser Annealing System by LD-pumped Nd:YAG Laser (2008)
  • Yoshinouchi Atsushi ID: 9000004932874

    Liquid Crystal Labs., SHARP Corporation (1995 from CiNii)

    Articles in CiNii:3

    • AMLCD (1) (1995)
    • Poly-Silicon TFTs Fabricated at Low Temperature Using Ion Doping Technique (1993)
    • AMLCD (1) (1995)
  • Yoshinouchi Atsushi ID: 9000048044995

    Articles in CiNii:1

    • Orientation Dependence of Silicon Oxidation Ratio in High-Pressure Water Vapor (2007)
  • Yoshinouchi Atsushi ID: 9000069631083

    Articles in CiNii:1

    • Improvement in Characteristics of Thin Film Transistors upon High-Pressure Steam Annealing (2007)
  • Yoshinouchi Atsushi ID: 9000252757958

    Institute of Laser Engineering, Osaka University (1983 from CiNii)

    Articles in CiNii:1

    • Light Ion Beam Transport in a Multi-Plasma Channel System (1983)
  • Yoshinouchi Atsushi ID: 9000252953878

    Institute of Laser Engineering Osaka University (1983 from CiNii)

    Articles in CiNii:1

    • Characteristics of Intense Ion Beam in Pinch Reflex Diode (1983)
  • Yoshinouchi Atsushi ID: 9000258124323

    Central Research Laboratories, SHARP Corporation, 2613–1 Ichinomoto–cho, Tenri, Nara 632 (1994 from CiNii)

    Articles in CiNii:1

    • Formation of Sources/Drains Using Self-Activation Technique on Polysilicon Thin Film Transistors. (1994)
  • Yoshinouchi Atsushi ID: 9000283158190

    Articles in CiNii:1

    • Fabrication of Self-Aligned Aluminum Gate Polysilicon Thin-Film Transistors Using Low-Temperature Crystallization Process. (1994)
  • Yoshinouchi Atsushi ID: 9000392686622

    Articles in CiNii:1

    • Light Ion Beam Transport in a Multi-Plasma Channel System (1983)
  • Yoshinouchi Atsushi ID: 9000392688533

    Articles in CiNii:1

    • Characteristics of Intense Ion Beam in Pinch Reflex Diode (1983)
  • Yoshinouchi Atsushi ID: 9000401593883

    Articles in CiNii:1

    • Characteristics of Intense Ion Beam in Pinch Reflex Diode (1983)
  • Yoshinouchi Atsushi ID: 9000401594296

    Articles in CiNii:1

    • Light Ion Beam Transport in a Multi-Plasma Channel System (1983)
  • Yoshinouchi Atsushi ID: 9000401643043

    Articles in CiNii:1

    • Formation of Sources/Drains Using Self-Activation Technique on Polysilicon Thin Film Transistors (1994)
  • Yoshinouchi Atsushi ID: 9000401644350

    Articles in CiNii:1

    • Fabrication of Self-Aligned Aluminum Gate Polysilicon Thin-Film Transistors Using Low-Temperature Crystallization Process (1994)
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