Search Results1-20 of  59

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  • YUDASAKA S. ID: 9000255786665

    Articles in CiNii:1

    • Effect of Nemamol emulsion on the gentian root-knot nematodes (1976)
  • YUDASAKA S. ID: 9000255786686

    Articles in CiNii:1

    • Effect of Dimethoate granular controlling Lily bulb mites (1976)
  • YUDASAKA Masako ID: 9000002086301

    SORST-JST, c/o NEC (2007 from CiNii)

    Articles in CiNii:1

    • Modification of the Surfaces of Single-Walled Carbon Nanohorns Using a Peptide Aptamer (2007)
  • YUDASAKA Masako ID: 9000014158474

    Nanotube Research Center, National Institute of Advanced Industrial Science and Technology (AIST) (2008 from CiNii)

    Articles in CiNii:1

    • High Efficiencies for Singlet Oxygen Generation of Fullerenes and Their Phototoxicity (2008)
  • YUDASAKA Masako ID: 9000015690164

    Nanotubulites Project, JST-ICORP (2003 from CiNii)

    Articles in CiNii:1

    • Production and Application of Carbon Nanotubes (2003)
  • YUDASAKA Masutoshi ID: 9000242764230

    大成建設土木部 (1983 from CiNii)

    Articles in CiNii:2

    • [4] Properties of Steel Fiber Reinforced SEC Concrete (1983)
    • [41] The Behavior of Double Mixed Fresh Lean Mortal (1983)
  • Yudasaka M. ID: 9000003215959

    Articles in CiNii:45

    • CVD法によるグラファイト薄膜とヘテログラファイト薄膜の作成 (1995)
    • Preparation of Graphite Thin Films and Carbon Nanotubes by Chemical Vapor Deposition (1996)
    • Transformation of Nano-Horns into Nano-Onions in Electron Beam (2000)
  • Yudasaka M. ID: 9000003432729

    Yokohama Nat. Univ. (1989 from CiNii)

    Articles in CiNii:6

    • 無機化合物-有機化合物複合系半導体における接合と光導電性 (1983)
    • アントラセン-インジウムカルコゲン化物接合系の光電流に及ぼすふん囲気の影響 (1983)
    • 蒸着によるInSe薄膜の作成とその電気的性質 (1984)
  • Yudasaka M. ID: 9000252926626

    AST/ICORP (2000 from CiNii)

    Articles in CiNii:1

    • D. レーザープロセシング (2000)
  • Yudasaka Ichio ID: 9000019301549

    Articles in CiNii:1

    • Wettability of Silicon Oxide with Poly-Crystalline Silicon (1994)
  • Yudasaka Ichio ID: 9000019309471

    Articles in CiNii:1

    • Application of As-Deposited Poly-Crystalline Silicon Films to Low Temperature CMOS Thin Film Transistors (1995)
  • Yudasaka Ichio ID: 9000019333862

    Articles in CiNii:1

    • TFT and Physical Properties of Poly-Crystalline Silicon Prepared by Very Low Pressure Chemical Vapour Deposition (VLPCVD) (1991)
  • Yudasaka Ichio ID: 9000019334483

    Frontier Device Research Center, Seiko Epson Corporation, 281 Fujimi, Fujimi, Nagano 399-0293, Japan (2007 from CiNii)

    Articles in CiNii:1

    • Spin-on n-Type Silicon Films Using Phosphorous-doped Polysilanes (2007)
  • Yudasaka Ichio ID: 9000019523758

    Articles in CiNii:1

    • Low Temperature Poly-Si TFTs Using Solid Phase Crystallization of Very Thin Films and an Electron Cyclotron Resonance Chemical Vapor Deposition Gate Insulator (1991)
  • Yudasaka Ichio ID: 9000019566150

    Articles in CiNii:1

    • Rapid Thermal Annealing Technique for Polycrystalline Silicon Thin-Film Transistors (1994)
  • Yudasaka Ichio ID: 9000024653233

    Articles in CiNii:1

    • Solution-processed silicon films and transistors (2006)
  • Yudasaka Ichio ID: 9000252763908

    SEIKO EPSON CORPORATION, TFT Research Laboratory (1991 from CiNii)

    Articles in CiNii:1

    • TFT and Physical Properties of Poly-Crystalline Silicon Prepared by Very Low Pressure Chemical Vapour Deposition (VLPCVD) (1991)
  • Yudasaka Ichio ID: 9000252763999

    SEIKO EPSON CORPORATION, TFT Research Laboratory (1991 from CiNii)

    Articles in CiNii:1

    • Low Temperature Poly-Si TFTs Using Solid Phase Crystallization of Very Thin Films and an Electron Cyclotron Resonance Chemical Vapor Deposition Gate Insulator (1991)
  • Yudasaka Ichio ID: 9000258126176

    Seiko Epson Corporation, Active Device Research Laboratory, Owa 3–3–5, Suwa, Nagano 392, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Application of As-Deposited Poly-Crystalline Silicon Films to Low Temperature CMOS Thin Film Transistors. (1995)
  • Yudasaka Ichio ID: 9000401624009

    Articles in CiNii:1

    • Low Temperature Poly-Si TFTs Using Solid Phase Crystallization of Very Thin Films and an Electron Cyclotron Resonance Chemical Vapor Deposition Gate Insulator (1991)
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