Search Results1-20 of  22

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  • YURI Masaaki ID: 9000004741479

    Semiconductor Devices Research Center, Semiconductor Company, Panasonic Corporation (2010 from CiNii)

    Articles in CiNii:20

    • Real Refractive Index Guided Self-Aligned(RISA)AlGaAs Laser Diodes for Optical Data Storage Systems (1997)
    • Low-noise, high-power AlGaAs laser diodes - Reduction of astigmatism using a real-refractive-index-guided-self-aligned structure - (1997)
    • Monolithically-Integrated Dual-Wavelength Laser Diodes for Optical Pickups (2002)
  • YURI Masaaki ID: 9000005568193

    Semiconductor Devices Research Center, Semiconductor Co., Matsushita Electric Industrial Co.,Ltd. (2001 from CiNii)

    Articles in CiNii:6

    • Low-Noise and High-Power GaAlAs Laser Diodes with a New Real Refractive Index Guided Structure (1995)
    • Reduction of Beam Divergence Angle by Low-Refractive-Index Layers Introduced to Real-Refractive-Index-Guided GaAlAs High-Power Laser Diodes (1997)
    • Reduction of Threading Dislocations in GaN on Sapphire by Buffer Layer Annealing in Low-Pressure Metalorganic Chemical Vapor Deposition (1999)
  • YURI Masaaki ID: 9000006915579

    Semiconductor Devices Research Center, Semiconductor Company, Panasonic Corporation (2008 from CiNii)

    Articles in CiNii:3

    • A GaN-based Surface-emitting Laser with 45°-inclined Mirror in Horizontal-cavity (2008)
    • A GaN-based Surface-emitting Laser with 45°-inclined Mirror in Horizontal-cavity (2008)
    • A GaN-based Surface-emitting Laser with 45°-inclined Mirror in Horizontal-cavity (2008)
  • YURI Masaaki ID: 9000019055913

    Panasonic Corporation (2011 from CiNii)

    Articles in CiNii:1

    • An Advanced 405-nm Laser Diode Crystallization Method of a-Si Film for Fabricating Microcrystalline-Si TFTs (2011)
  • YURI Masaaki ID: 9000107334085

    Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. (2004 from CiNii)

    Articles in CiNii:1

    • High-Extraction-Efficiency Blue Light-Emitting Diode Using Extended-Pitch Photonic Crystal (2004)
  • YURI Masaaki ID: 9000253326834

    Electronics Research Laboratory, Matsushita Electronics Corporation (1997 from CiNii)

    Articles in CiNii:1

    • Low-noise, high-power AlGaAs laser diodes:Reduction of astigmatism using a real-refractive-index-guided-self-aligned structure (1997)
  • YURI Masaaki ID: 9000253696751

    Electronics Research Laboratory, Corporate Research and Development, Matsushita Electronics Corporation (1997 from CiNii)

    Articles in CiNii:1

    • Topical Papers on Applications of Lasers to Memory. Real Refractive Index Guided Self-Aligned(RISA) AlGaAs Laser Diodes for Optical Data Storage Systems. (1997)
  • YURI Masaaki ID: 9000257901452

    Semiconductor Devices Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. (2002 from CiNii)

    Articles in CiNii:1

    • Monolithically-Integrated Dual-Wavelength Laser Diodes for Optical Pickups. (2002)
  • Yuri Masaaki ID: 9000024979830

    Articles in CiNii:1

    • Separation of thin GaN from sapphire by laser lift-off technique (2011)
  • Yuri Masaaki ID: 9000025015052

    Articles in CiNii:1

    • Effects of growth temperatures on crystal quality of GaN by vapor phase epitaxy using GaCl3 and NH3 (2011)
  • Yuri Masaaki ID: 9000258144294

    Semiconductor Device Research Center, Matsushita Electronics Corporation, Saiwai–cho, Takatsuki, Osaka 569–1193, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Reduction of Threading Dislocations in GaN on Sapphire by Buffer Layer Annealing in Low-Pressure Metalorganic Chemical Vapor Deposition. (1999)
  • Yuri Masaaki ID: 9000258176159

    Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. (2004 from CiNii)

    Articles in CiNii:1

    • High-Extraction-Efficiency Blue Light-Emitting Diode Using Extended-Pitch Photonic Crystal (2004)
  • Yuri Masaaki ID: 9000391383854

    京都大学工学部 (1985 from CiNii)

    Articles in CiNii:1

    • Subjective appraisal of the contrast of the characters on the CRT display (1985)
  • Yuri Masaaki ID: 9000401649664

    Articles in CiNii:1

    • Low-Noise and High-Power GaAlAs Laser Diodes with a New Real Refractive Index Guided Structure (1995)
  • Yuri Masaaki ID: 9000401661648

    Articles in CiNii:1

    • 120 mW High-Power Low-Noise GaAlAs Multiple-Quantum-Well Laser Diodes with a New Real Refractive Index Guided Self-Aligned Structure (1996)
  • Yuri Masaaki ID: 9000401663694

    Articles in CiNii:1

    • Reduction of Beam Divergence Angle by Low-Refractive-Index Layers Introduced to Real-Refractive-Index-Guided GaAlAs High-Power Laser Diodes (1997)
  • Yuri Masaaki ID: 9000401684106

    Articles in CiNii:1

    • Reduction of Threading Dislocations in GaN on Sapphire by Buffer Layer Annealing in Low-Pressure Metalorganic Chemical Vapor Deposition (1999)
  • Yuri Masaaki ID: 9000401691215

    Articles in CiNii:1

    • Analysis of Unstable Two-Phase Region in Wurtzite Group III Nitride Ternary Alloy Using Modified Valence Force Field Model (2000)
  • Yuri Masaaki ID: 9000401701489

    Articles in CiNii:1

    • Monolithically Integrated Dual-Wavelength Self-Sustained Pulsating Laser Diodes with Real Refractive Index Guided Self-Aligned Structure (2001)
  • Yuri Masaaki ID: 9000401729011

    Articles in CiNii:1

    • High-Extraction-Efficiency Blue Light-Emitting Diode Using Extended-Pitch Photonic Crystal (2004)
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