Search Results1-7 of  7

  • Yutani Akie ID: 9000025038191

    Articles in CiNii:1

    • Novel contact-plug process with low-resistance nucleation layer using diborane-reduction tungsten atomic-layer-deposition method for 32nm complementary metal-oxide-semiconductor devices and beyond (Special issue: Solid state devices and materials) (2008)
  • YUTANI Akie ID: 9000001721052

    RCAST, University of Tokyo (1996 from CiNii)

    Articles in CiNii:1

    • Mobility Limiting Factors of n-Channel Si/SiGe Modulation-Doped Systems with Varied Channel Thickness (1996)
  • YUTANI Akie ID: 9000004967310

    Mitsubishi Electric Corporation (1999 from CiNii)

    Articles in CiNii:5

    • Effects of the electrodes on the electrical properties of high-ε capacitors (1999)
    • Impact of the post-anneal procedure on the dielectric response of the BST capacitors (1999)
    • Effects of the Oxidation procedure on the dielectric dissipation of the BST Capacitor (1999)
  • YUTANI Akie ID: 9000107389140

    LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technology Corp. (2004 from CiNii)

    Articles in CiNii:1

    • Pt/Ba_xSr_<(1-x)>TiO_3/Pt Capacitor Technology for 0.15μm Embedded Dynamic Random Access Memory (2004)
  • Yutani Akie ID: 9000258172345

    LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technology Corp. (2004 from CiNii)

    Articles in CiNii:1

    • Pt/BaxSr(1-x)TiO3/Pt Capacitor Technology for 0.15 .MU.m Embedded Dynamic Random Access Memory (2004)
  • Yutani Akie ID: 9000401725557

    Articles in CiNii:1

    • 2004-05-11 (2004)
  • Yutani Akie ID: 9000401768455

    Articles in CiNii:1

    • 2008-04-25 (2008)
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