Search Results1-8 of  8

  • ZHOU Jun Ming ID: 9000020073344

    Department of Applied Physics, University of Tokyo (1981 from CiNii)

    Articles in CiNii:1

    • Effect of Current on the Behaviour of Si (111) 4×1-In Surface (1981)
  • ZHOU Jun Ming ID: 9000020246154

    中国科学院北京物理研究所 (1980 from CiNii)

    Articles in CiNii:1

    • Two-Dimensional Condenced Phases of In on Si (111) Surfaces (1980)
  • ZHOU Jun Ming ID: 9000107311640

    State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences (2005 from CiNii)

    Articles in CiNii:1

    • Origin of Selective Growth of GaN on Maskless V-Grooved Sapphire Substrates by Metalorganic Chemical Vapor Deposition (2005)
  • Zhou Jun Ming ID: 9000258179163

    State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences (2005 from CiNii)

    Articles in CiNii:1

    • Origin of Selective Growth of GaN on Maskless V-Grooved Sapphire Substrates by Metalorganic Chemical Vapor Deposition (2005)
  • Zhou Jun Ming ID: 9000401587307

    Articles in CiNii:1

    • Superstructures and Growth Properties of Indium Deposits on Silicon (111) Surfaces with Its Influence on Surface Electrical Conduction (1980)
  • Zhou Jun Ming ID: 9000401745340

    Articles in CiNii:1

    • Origin of Selective Growth of GaN on Maskless V-Grooved Sapphire Substrates by Metalorganic Chemical Vapor Deposition (2005)
  • Zhou Jun Ming ID: 9000252946982

    Department of Applied Physics, Faculty of Engineering, the University of Tokyo (1980 from CiNii)

    Articles in CiNii:1

    • Superstructures and Growth Properties of Indium Deposits on Silicon (111) Surfaces with Its Influence on Surface Electrical Conduction (1980)
  • Zhou Jun Ming ID: 9000392688700

    Articles in CiNii:1

    • Superstructures and Growth Properties of Indium Deposits on Silicon (111) Surfaces with Its Influence on Surface Electrical Conduction (1980)
Page Top