Search Results1-20 of  204

  • ZAIMA Shigeaki ID: 9000404506808

    Graduate School of Engineering, Nagoya University (2012 from CiNii)

    Articles in CiNii:1

    • Current status and future perspective in post-scaling technoplogy (2012)
  • ZAIMA Shigeaki ID: 9000404508779

    Graduate School of Engineering, Nagoya University (2006 from CiNii)

    Articles in CiNii:1

    • Engineering of strain and dislocations at group IV semiconductor thin-film interfaces for next-generation silicon ULSI (2006)
  • Zaima Shigeaki ID: 9000025016942

    Articles in CiNii:1

    • Crystalline structures and electrical properties of high-nitrogen-content Hf-Si-N films (Special issue: Solid state devices and materials) (2010)
  • Zaima Shigeaki ID: 9000025080958

    Articles in CiNii:1

    • Formation of palladium silicide thin layers on Si(110) substrates (Special issue: Advanced metallization for ULSI applications) (2011)
  • Zaima Shigeaki ID: 9000025117237

    Articles in CiNii:1

    • Formation of palladium silicide on heavily doped Si(001) substrates using Ti intermediate layer (Special issue: Advanced metallization for ULSI applications) (2010)
  • Zaima Shigeaki ID: 9000241473013

    Articles in CiNii:1

    • COMPREHENSIVE REVIEW : Technology Evolution for Silicon Nanoelectronics : Postscaling Technology (2013)
  • Zaima Shigeaki ID: 9000403305680

    Articles in CiNii:1

    • Ultra-low resistance contact for n-type Ge[1-x]Sn[x] with in-situ Sb heavily doping and nickel stanogermanide formation (シリコン材料・デバイス) (2019)
  • ZAIMA Shigeaki ID: 1000070158947

    Graduate School of Engineering, Nagoya University:EcoTopia Science Institute, Nagoya University (2015 from CiNii)

    Articles in CiNii:118

    • Preface (1995)
    • Analysis of Silicide/Silicon Interfacial Stractures Using Medium-Energy Ion Scattering (1995)
    • Initial oxidation processes of H-terminated Si(100) surfaces (1996)
  • ZAIMA Shigeaki ID: 9000001348610

    Center for Cooperative Research in Advanced Science & Technology, Nagoya University (2004 from CiNii)

    Articles in CiNii:1

    • Effects of Nitrogen Addition to Microwave Oxygen Plasma in Surface Wave with Disk-Plate Window and Photoresist Ashing (2004)
  • ZAIMA Shigeaki ID: 9000001721316

    Department of Crystalline Materials Science, School of Engineering, Nagoya University (1995 from CiNii)

    Articles in CiNii:1

    • Formation of Metal/Silicon Contacts for ULSI and Induced Defects by Silicidation (1995)
  • ZAIMA Shigeaki ID: 9000005595996

    Department of Crystalline Materials Science, School of Engineering, Nagoya University (1998 from CiNii)

    Articles in CiNii:3

    • Quantum Chemical Study of the Oxidation Sites in Hydrogen- and Water-Terminated Si Dimers: Attempt to Understand the Si-Si Back-Bond Oxidation on the Si Surface (1998)
    • Formation of Au and AuSi_x-Pyramids in Separation by Implanted Oxygen Wafers with Si Pillars in SiO_2 Layer (1995)
    • Quantitative Surface Atomic Geometry and Two-Dimensional Surface Electron Distribution Analysis by a New Technique in Low-Energy Ion Scattering (1981)
  • ZAIMA Shigeaki ID: 9000019052407

    Graduate School of Engineering, Nagoya University (2012 from CiNii)

    Articles in CiNii:1

    • Crystallinity Improvement of Epitaxial Ge Grown on a Ge(110) Substrate by Incorporation of Sn (2012)
  • ZAIMA Shigeaki ID: 9000020119729

    Department of Electronic Engineering, Tohoku University (1984 from CiNii)

    Articles in CiNii:1

    • Flashing Temperature Dependence of Field Electron Emission from TiC Single Crystals (1984)
  • ZAIMA Shigeaki ID: 9000020167453

    Department of Electrical Engineering and Electronics, Toyohaski University of Technology (1983 from CiNii)

    Articles in CiNii:1

    • Basic Field Emission Properties of TiC and ZrC Single Crystals (1983)
  • ZAIMA Shigeaki ID: 9000020311968

    Department of Electronic Engineering, Faculty of Engineering, Tohoku University (1981 from CiNii)

    Articles in CiNii:1

    • On the Promising Cathode Materials for a High Brightness Electron Beam-The Figure of Merits (1981)
  • ZAIMA Shigeaki ID: 9000107305903

    Center for Cooperative Research in Advanced Science and Technology, Nagoya University (2003 from CiNii)

    Articles in CiNii:1

    • Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen (2003)
  • ZAIMA Shigeaki ID: 9000107306001

    Center of Cooperative Research in Advanced Science & Technology, Nagoya University (2003 from CiNii)

    Articles in CiNii:1

    • Novel Nonvolatile Random-Access Memory with Si Nanocrystals for Ultralow-Power Scheme (2003)
  • ZAIMA Shigeaki ID: 9000107306815

    Center for Cooperative Research in Advanced Science and Technology, Nagoya University (2003 from CiNii)

    Articles in CiNii:1

    • Local Leakage Current of HfO_2 Thin Films Characterized by Conducting Atomic Force Microscopy (2003)
  • ZAIMA Shigeaki ID: 9000107330935

    Center for Cooperative Research in Advanced Science and Technology, Nagoya University (2004 from CiNii)

    Articles in CiNii:1

    • Behavior of Local Current Leakage in Stressed Gate SiO_2 Films Analyzed by Conductive Atomic Force Microscopy (2004)
  • ZAIMA Shigeaki ID: 9000107331307

    Center for Cooperative Research in Advanced Science and Technology, Nagoya University (2004 from CiNii)

    Articles in CiNii:1

    • Detection and Characterization of Stress-Induced Defects in Gate SiO_2 Films by Conductive Atomic Force Microscopy (2004)
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