Search Results1-20 of  61

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  • Song Zhitang ID: 9000018505687

    Articles in CiNii:1

    • Phase change line memory cell based on Ge2Sb2Te5 fabricated using focused ion beam (2011)
  • Song Zhitang ID: 9000024948173

    Articles in CiNii:1

    • Optimization of Anomalous Cells with High SET Resistance in Phase Change Memory Arrays (2013)
  • Song Zhitang ID: 9000025068671

    Articles in CiNii:1

    • First-principles study of equilibrium properties and electronic structures of GeTe-Sb2Te3 pseudobinary crystalline films (2007)
  • Song Zhitang ID: 9000025082446

    Articles in CiNii:1

    • Temperature influence on electrical properties of Sb-Te phase-change material (2008)
  • SONG Zhitang ID: 9000001857327

    State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences (2010 from CiNii)

    Articles in CiNii:5

    • Investigation of Compositional Gradient Phase Change Si_xSb_2Te_3 Thin Films (2007)
    • High Speed Chalcogenide Random Access Memory Based on Si_2Sb_2Te_5 (2007)
    • Germanium Nitride Interfacial Layer for Chalcogenide Random Access Memory Applications (2008)
  • SONG Zhitang ID: 9000005602184

    State Key Laboratory of Functional Material for Information, Shanghai Institute of Metallurgy, Chinese Academy of Science (1999 from CiNii)

    Articles in CiNii:1

    • A study on Microstructure and Electrical Properties of Pb_<0.8>La_<0.1>Ca_<0.1>Ti_<0.975>O_3 Thin Films Prepared by Metal-Organic Decomposition (1999)
  • SONG Zhitang ID: 9000107347597

    Nanotechnology Laboratory, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences (2007 from CiNii)

    Articles in CiNii:1

    • Multilevel Data Storage Characteristics of Phase Change Memory Cell with Doublelayer Chalcogenide Films (Ge_2Sb_2Te_5 and Sb_2Te_3) (2007)
  • SONG Zhitang ID: 9000107347629

    Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences (2007 from CiNii)

    Articles in CiNii:1

    • Reversible Resistance Switching of GeTi Thin Film Used for Non-Volatile Memory (2007)
  • SONG Zhitang ID: 9000107376213

    State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences (2011 from CiNii)

    Articles in CiNii:1

    • Crystallization Process of Amorphous GaSb_5Te_4 Film for High-Speed Phase Change Memory (2011)
  • Song Zhitang ID: 9000024938834

    Articles in CiNii:1

    • Phase change memory cell using Si2Sb2Te3 material (2010)
  • Song Zhitang ID: 9000024984075

    Articles in CiNii:1

    • Mechanism of oxidation on Si2Sb2Te5 phase change material and its application (2011)
  • Song Zhitang ID: 9000025064405

    Articles in CiNii:1

    • Three-dimensional numerical simulation of phase-change memory cell with probe like bottom electrode structure (2009)
  • Song Zhitang ID: 9000025086915

    Articles in CiNii:1

    • Ge2Sb2Te5 phase change memory cell featuring platinum tapered heating electrode for low-voltage operation (2010)
  • Song Zhitang ID: 9000025091637

    Articles in CiNii:1

    • Phase-change characteristics and thermal stability of GeTe/Sb2Te3 nanocomposite multilayer films (2009)
  • Song Zhitang ID: 9000025123940

    Articles in CiNii:1

    • Study on interface adhesion between phase change material film and SiO2 layer by nanoscratch test (2011)
  • Song Zhitang ID: 9000053323253

    Articles in CiNii:1

    • Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer (2012)
  • Song Zhitang ID: 9000069464127

    Articles in CiNii:1

    • Improved Performance of Phase Change Memory Cell with Strontium Titanate and Barium Titanate Buffer Layer (2010)
  • Song Zhitang ID: 9000083732121

    Articles in CiNii:1

    • Study on Adhesive Strength between Ge2Sb2Te5Film and Electrodes for Phase Change Memory Application (2009)
  • Song Zhitang ID: 9000257865532

    Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences (2014 from CiNii)

    Articles in CiNii:1

    • A smart method of optimizing the read/write current on PCM array (2014)
  • Song Zhitang ID: 9000258143775

    State Key Laboratory of Functional Material for Information, Shanghai Institute of Metallurgy, Chinese Academy of Science, Shanghai 200050, China (1999 from CiNii)

    Articles in CiNii:1

    • A Study on Microstructure and Electrical Properties of Pb0.8La0.1Ca0.1Ti0.975O3 Thin Films Prepared by Metal-Organic Decomposition. (1999)
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