検索結果 2137件中 1-20 を表示

  • Effective adsorption and collection of cesium from aqueous solution using graphene oxide grown on porous alumina

    Entani Shiro , Honda Mitsunori , Shimoyama Iwao , Li Songtian , Naramoto Hiroshi , Yaita Tsuyoshi , Sakai Seiji

    … Graphene oxide (GO) with a large surface area was synthesized by the direct growth of GO on porous alumina using chemical vapor deposition to study the Cs adsorption mechanism in aqueous solutions. …

    Jpn. J. Appl. Phys. 57(4S), 04FP04, 2018-02-26

    応用物理学会

  • Measurement of incident molecular temperature in the formation of organic thin films

    Abe Takahiro , Matsubara Ryosuke , Hayakawa Munetaka , Shimoyama Akifumi , Tanaka Takaaki , Tsuji Akira , Takahashi Yoshikazu , Kubono Atsushi

    … To investigate the effects of incident molecular temperature on organic-thin-film growth by vacuum evaporation, quantitative analysis of molecular temperature is required. … In this study, we propose a method of determining molecular temperature based on the heat exchange between a platinum filament and molecular vapor. … Molecular temperature is estimated from filament temperature, which remains unchanged even under molecular vapor supply. …

    Jpn. J. Appl. Phys. 57(3S2), 03EG13, 2018-02-13

    応用物理学会

  • Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant

    Matsuoka Hirofumi , Kanahashi Kaito , Tanaka Naoki , Shoji Yoshiaki , Li Lain-Jong , Pu Jiang , Ito Hiroshi , Ohta Hiromichi , Fukushima Takanori , Takenobu Taishi

    … However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. … Upon doping, the sheet resistance of large-area polycrystalline WSe<inf>2</inf>monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq. …

    Jpn. J. Appl. Phys. 57(2S2), 02CB15, 2018-01-18

    応用物理学会

  • Demonstration of GaAsSb/InAs nanowire backward diodes grown using position-controlled vapor–liquid–solid method

    Kawaguchi Kenichi , Takahashi Tsuyoshi , Okamoto Naoya , Sato Masaru

    … p-GaAsSb/n-InAs type-II nanowire (NW) diodes were fabricated using the position-controlled vapor–liquid–solid growth method. … Backward diode characteristics, that is, current flow toward negative bias originating from a tunnel current and current suppression toward positive bias by a heterobarrier, were demonstrated. …

    Appl. Phys. Express 11(2), 025001, 2018-01-18

    応用物理学会

  • Study of the Growth and Concentration Fields of ZnO Nanostructures in a Double-Tube Furnace

    Tian Huijuan

    … <p>ZnO nanostructures were prepared by chemical vapor deposition (CVD) in a double-tube furnace. … and Zn vapor were simulated by the computational fluid dynamics (CFD) software FLUENT. … flow rate were both conducive to a morphology transition of the ZnO nanostructure from needle-like tetrapodal to nail-like tetrapodal.</p> …

    JOURNAL OF CHEMICAL ENGINEERING OF JAPAN 51(3), 210-215, 2018

    J-STAGE

  • Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy

    Yoshizawa Ryo , Miyake Hideto , Hiramatsu Kazumasa

    … We prepared an AlN film with a thickness of 20 nm by radio-frequency (RF) sputtering, on which an AlN epilayer with a thickness of 280 nm was grown by metalorganic vapor phase epitaxy (MOVPE) at different growth temperatures. … The full width at half maximum (FWHM) of the X-ray rocking curve (XRC) for AlN(0002) was approximately 50 arcsec for all samples, whereas that for AlN([Formula: see text]) significantly decreased from 6500 to 350 arcsec after thermal annealing. …

    Jpn. J. Appl. Phys. 57(1S), 01AD05, 2017-12-18

    応用物理学会

  • Fabrication of selective-area growth InGaN LED by mixed-source hydride vapor-phase epitaxy

    Bae Sung , Jeon Injun , Jeon Hunsoo , Kim Kyoung , Yang Min , Yi Sam , Lee Jae , Ahn Hyung , Yu Young , Sawaki Nobuhiko , Kim Suck-Whan

    … We prepared InGaN light-emitting diodes (LEDs) with the active layers grown from a mixed source of Ga–In–N materials on an n-type GaN substrate by a selective-area growth method and three fabrication steps: photolithography, epitaxial layer growth, and metallization. …

    Jpn. J. Appl. Phys. 57(1S), 01AD03, 2017-12-08

    応用物理学会

  • Structural study of GaN grown on nonpolar bulk GaN substrates with trench patterns

    Okada Shunsuke , Iwai Hiroki , Miyake Hideto , Hiramatsu Kazumasa

    … The selective-area growth of GaN (SAG-GaN) films on nonpolar bulk GaN substrates with trench patterns was performed by metalorganic vapor phase epitaxy. … The width of ([Formula: see text]) facets decreased whereas ([Formula: see text]) facets expanded with increasing off angle of trench patterns from the a-axis. …

    Jpn. J. Appl. Phys. 56(12), 125504, 2017-11-22

    応用物理学会

  • Sn-doped β-Ga

    Lee Su , Kang Hyon

    … The growth sequence of Sn-doped β-Ga<inf>2</inf>O<inf>3</inf>NWs is similar to that of the undoped β-Ga<inf>2</inf>O<inf>3</inf>NWs. … Self-assembled Ga clusters act as seeds for initiating the growth of Sn-doped β-Ga<inf>2</inf>O<inf>3</inf>NWs through a vapor–liquid–solid process, while Sn atoms are incorporated into the trunk of NWs uniformly. …

    Jpn. J. Appl. Phys. 57(1S), 01AE02, 2017-11-13

    応用物理学会

  • Electron mobility enhancement in metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors by control of surface morphology of spacer layer

    Yamada Atsushi , Ishiguro Tetsuro , Kotani Junji , Nakamura Norikazu

    … We demonstrated low-sheet-resistance metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors using AlGaN spacers with excellent surface morphology. … We systematically investigated the effects of AlGaN spacer growth conditions on surface morphology and electron mobility. … Ga desorption from AlGaN spacers was suppressed by increasing the trimethylaluminum (TMA) supply rate, resulting in the small surface roughnesses of InAlN barriers and AlGaN spacers. …

    Jpn. J. Appl. Phys. 57(1S), 01AD01, 2017-11-10

    応用物理学会

  • Abrupt GaN/p-GaN:Mg junctions grown via metalorganic chemical vapor deposition

    Agarwal Anchal , Gupta Chirag , Alhassan Abdullah , Mates Tom , Keller Stacia , Mishra Umesh

    … An improvement in the suppression of surface riding of magnesium from p-GaN:Mg into subsequent layers was achieved via low temperature flow modulation epitaxy. … In particular, the slope of the Mg concentration drop was reduced to 5 nm/dec for a growth temperature of 620 °C — … the lowest value ever reported for metalorganic chemical vapor deposition. …

    Appl. Phys. Express 10(11), 111002, 2017-10-20

    応用物理学会

  • Step Bunching Induced by Immobile Impurities in a Surface Diffusion Field

    Sato Masahide

    … In this paper, we carry out Monte Carlo simulations using a simple lattice model and study how the surface diffusion field affects the growth law of the bunch size in the step bunching induced by immobile impurities. … Both impurities and atoms impinge from a vapor phase to the vicinal face, but they do not evaporate. …

    Journal of the Physical Society of Japan 86(11), 114603-1-6, 2017-10-13

    日本物理学会

  • Comparative study of GaN-based ultraviolet LEDs grown on different-sized patterned sapphire substrates with sputtered AlN nucleation layer

    Zhou Shengjun , Hu Hongpo , Liu Xingtong , Liu Mengling , Ding Xinghuo , Gui Chengqun , Liu Sheng , Guo L.

    … GaN-based ultraviolet-light-emitting diodes (UV LEDs) with 375 nm emission were grown on different-sized patterned sapphire substrates (PSSs) with ex situ 15-nm-thick sputtered AlN nucleation layers by metal–organic chemical vapor deposition (MOCVD). …

    Jpn. J. Appl. Phys. 56(11), 111001, 2017-10-13

    応用物理学会

  • Formation technology of flat surface with epitaxial growth on ion-implanted (100)-oriented Si surface of thin silicon-on-insulator

    Furukawa Kiichi , Teramoto Akinobu , Kuroda Rihito , Suwa Tomoyuki , Hashimoto Keiichi , Sugawa Shigetoshi , Suzuki Daisuke , Chiba Yoichiro , Ishii Katsutoshi , Shimizu Akira , Hasebe Kazuhide

    … For the development of three-dimensional devices, selective epitaxial growth (SEG) technology has attracted much attention. … For the fabrication of a three-dimensional device structure, the selectivity of epitaxial growth must be accurately controlled not only on Si and SiO<inf>2</inf>, but also on different impurity-type silicon surfaces. … Both vapor phase epitaxy (VPE) and solid phase epitaxy (SPE) were performed on ion-implanted silicon-on-insulator (SOI) thin wafers. …

    Jpn. J. Appl. Phys. 56(10), 105503, 2017-09-19

    応用物理学会

  • Halide vapor phase epitaxy of thick GaN films on ScAlMgO

    Ohnishi Kazuki , Kanoh Masaya , Tanikawa Tomoyuki , Kuboya Shigeyuki , Mukai Takashi , Matsuoka Takashi

    … Halide vapor phase epitaxy of thick GaN films was demonstrated on ScAlMgO<inf>4</inf>(SCAM) substrates, and their self-separation was achieved. … The 320-µm-thick GaN film was self-separated from the SCAM substrate during the cooling process after the growth. …

    Appl. Phys. Express 10(10), 101001, 2017-09-07

    応用物理学会

  • 結晶形状に準拠した座標系による氷晶成長の2次元数値シミュレーション(遠峰菊郎教授に捧ぐ)

    川上 貴士 , 板野 稔久

    … Ice crystal growth by diffusion of water vapor from supercooled liquid water is simulated with equationswritten in a surface-following coordinate system. … Byintroducing the system, the growth of one branch of snow crystal is simulated smoothly in contrast to theprevious simulations adopting the ordinary rectangular coordinate system where it becomes bumpy. …

    防衛大学校理工学研究報告 = Scientific and engineering reports of the National Defense Academy 55(1), 25-34, 2017-09

    機関リポジトリ

  • Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

    Fujikura Hajime , Konno Taichiro , Yoshida Takehiro , Horikiri Fumimasa

    … Thick (20–30 µm) layers of highly pure GaN with device-quality smooth as-grown surfaces were prepared on freestanding GaN substrates by using our advanced hydride-vapor-phase epitaxy (HVPE) system. … Removal of quartz parts from the HVPE system markedly reduced concentrations of residual impurities to below the limits of detection by secondary-ion mass spectrometry. … These achievements clearly demonstrate the potential of HVPE as a tool for epitaxial growth of power-device structures. …

    Jpn. J. Appl. Phys. 56(8), 085503, 2017-07-21

    応用物理学会

  • Scanning tunneling microscopy/spectroscopy on MoS

    Mogi Hiroyuki , Kobayashi Yu , Taninaka Atsushi , Sakurada Ryuji , Takeuchi Takahiro , Yoshida Shoji , Takeuchi Osamu , Miyata Yasumitsu , Shigekawa Hidemi

    … MoS<inf>2</inf>embedded nanowires formed in a transition-metal dichalcogenide (TMDC) layered semiconductor of Mo<inf>1−</inf><inf>x</inf>W<inf>x</inf>S<inf>2</inf>alloy grown by chemical vapor deposition (CVD) on graphite were observed for the first time. …

    Jpn. J. Appl. Phys. 56(8S1), 08LB06, 2017-07-19

    応用物理学会

  • Growth of high-quality In

    Huynh Sa , Ha Minh , Do Huy , Nguyen Tuan , Yu Hung , Luc Quang , Chang Edward

    … The growth of high-quality In<inf>0.28</inf>Ga<inf>0.72</inf>Sb epilayer on an AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition is demonstrated. …

    Appl. Phys. Express 10(7), 075505, 2017-06-23

    応用物理学会

  • Stoichiometric control for heteroepitaxial growth of smooth ε-Ga

    Tahara Daisuke , Nishinaka Hiroyuki , Morimoto Shota , Yoshimoto Masahiro

    … Epitaxial ε-Ga<inf>2</inf>O<inf>3</inf>thin films with smooth surfaces were successfully grown on c-plane AlN templates by mist chemical vapor deposition. … Cathodoluminescence measurements showed a deep-level emission ranging from 1.55–3.7 eV; …

    Jpn. J. Appl. Phys. 56(7), 078004, 2017-06-22

    応用物理学会

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