CiNii Articles - Single-electron transistor

1

Single-Electron Effects Observed in Dielectrophoretic Assembly of Gold Nanoparticles with Two Different Diameters [in Japanese]

浦江哲也 , 谷貝知起 , 関根一真 , 守屋雅隆 , 島田宏 , 平野愛弓 , 廣瀬文彦 , 水柿義直

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 119(431), 69-72, 2020-02-28
2

Carbon-bridged Oligo(phenylenevinylene)s (COPV6) Single-Electron Transistor based on Electroless Au-plated (ELGP) Nanogap Electrodes [in Japanese]

入江力也 , Chun Ouyang , 居藤悠馬 , Phan Trong Tue , 辻勇人 , 中村栄一 , 真島豊

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 119(350), 9-12, 2019-12-20
3

Single-molecule single-electron transistor (SM-SET) based on π-conjugated quinoidal-fused oligosilole and heteroepitaxial spherical Au/Pt nanogap electrodes

Lee Seung Joo , Kim Jaeyeon , Tsuda Tomohiro , Takano Ryo , Shintani Ryo , Nozaki Kyoko , Majima Yutaka

Applied Physics Express 12(12), 125007-125007, 2019-11-21

DOI
4

Applicability of small Josephson Junction Arrays as Radiation Detectors [in Japanese]

鈴木俊貴 , Kanyolo Godwill Mbiti , 西垣宏志 , 水柿義直 , 島田宏

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 119(164), 15-19, 2019-08-09
5

Electrical Characteristics of Random Arrays of Gold Nanoparticles Similar to Those of Single-Electron Transistor [in Japanese]

守屋雅隆 , Huong Tran Thi Thu , 松本和彦 , 森林誠 , 島田宏 , 木村康男 , 平野愛弓 , 水柿義直

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 118(9), 9-12, 2018-04-19
6

単層Fe-MgF₂グラニュラー薄膜を用いた単電子トランジスタの電気特性 (シリコン材料・デバイス) [in Japanese]

浅井佑基 , 本庄周作 , 瘧師貴幸 , 福地厚 , 有田正志 , 高橋庸夫

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 117(454), 1-6, 2018-02-28
7

単層Fe-MgF₂グラニュラー薄膜を用いた単電子トランジスタの電気特性 (電子デバイス) [in Japanese]

浅井佑基 , 本庄周作 , 瘧師貴幸 , 福地厚 , 有田正志 , 高橋庸夫

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 117(453), 1-6, 2018-02-28
8

Integration of room temperature operating single electron transistor and MOS circuits [in Japanese]

川上誠純

大学院研究年報理工学研究科編 (47), 2017-08-01

IR
9

Fabrication of resistively-coupled single-electron device using an array of gold nanoparticles

Tran Thi Thu Huong , Kazuhiko Matsumoto , Masataka Moriya , Hiroshi Shimada , Yasuo Kimura , Ayumi Hirano-Iwata , Yoshinao Mizugaki

… We demonstrated one type of single-electron device that exhibited electrical characteristics similar to those of resistively-coupled SE transistor (R-SET) at 77 K and room temperature (287 K). … Three Au electrodes on an oxidized Si chip served as drain, source, and gate electrodes were formed using electron-beam lithography and evaporation techniques. …

Applied Physics A 123(8), 123:557, 2017-07-31

IR
10

Molecular floating-gate single-electron transistor

Yamamoto Makoto , Azuma Yasuo , Sakamoto Masanori , Teranishi Toshiharu , Ishii Hisao , Majima Yutaka , Noguchi Yutaka

… We investigated reversible switching behaviors of a molecular floating-gate single-electron transistor (MFG-SET). … We found that single-electron charging of ttbCuPc leads to a potential shift in the Coulomb island by more than half of its charging energy. …

Scientific Reports (7), 2017-05-08

IR
11

Electric and Magnetic Field Responses of Single-Electron Transistors Composed of Superconducting Island with Ferromagnetic Leads [in Japanese]

水柿義直 , 滝口将志 , 田村伸行 , 島田宏

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 117(6), 47-50, 2017-04-20
12

Stochastic Quantization of a One-Dimensional Multi-Particle System for the Circuit Simulator Model of Photoelectric Terahertz Wave Detectors

Ibuki Nakamura , Keita Matsuura , Hisato Fujisaka , Masaru Fukushima , Takeshi Kamio

IEICE Proceeding Series (29), 534-537, 2017

DOI
13

Integration of colloidal silicon nanocrystals on metal electrodes in single-electron transistor

Higashikawa Yasuhiro , Azuma Yasuo , Majima Yutaka , Kano Shinya , Fujii Minoru

… We develop a facile process to integrate colloidal silicon nanocrystals (Si NCs) with metal electrodes in a single-electron transistor by self-assembly. …

Applied Physics Letters 109(21), 213104, 2016-11-21

IR
14

Observation of ambipolar switching in a silver nanoparticle single-electron transistor with multiple molecular floating gates

Yamamoto Makoto , Shinohara Shuhei , Tamada Kaoru , Ishii Hisao , Noguchi Yutaka

Japanese Journal of Applied Physics 55(3S2), 03DC02-03DC02, 2016-01-07

DOI
15

Detection of emission from a superconducting single-electron transistor by an array of small Josephson junctions [in Japanese]

Nishigaki H. , Kanyolo G. M. , Mizugaki Y. , Shimada H.

<p>微小Josephson接合の1次元配列では、マイクロ波を照射すると電流電圧特性に存在するCoulombギャップがマイクロ波電圧に比例して減少する。この特性変化に基づいて、微小Josephson接合列はマイクロ波検出器となり得る。微小Josephson接合列をオンチップの輻射強度検出器とし、輻射源として超伝導単一電子トランジスタ(SSET)を用いて、SSETの特性変化に応じた輻射検 …

Meeting Abstracts of the Physical Society of Japan 71.2(0), 1065-1065, 2016

J-STAGE
16

Modeling a radio-frequency single-electron-transistor scanning probe

Lü Li , Su Lina , Sun Jiandong , Li Xinxing , Qin Hua , Ji Zhongqing , Blick Robert H.

Japanese Journal of Applied Physics 53(8), 085001-085001, 2014-07-29

DOI
17

Cross-sectional transmission electron microscopy analysis of a single self-assembled quantum dot single electron transistor fabricated by atomic force microscope local oxidation

Moriya Rai , Ikenaga Eriko , Shibata Kenji , Hirakawa Kazuhiko , Masubuchi Satoru , Machida Tomoki

Japanese Journal of Applied Physics 53(4), 045202-045202, 2014-03-31

DOI
18

Correlation between polarity of magnetoresistance ratio and tunnel resistance in ferromagnetic single-electron transistor with superconductive island

Takiguchi Masashi , Shimada Hiroshi , Mizugaki Yoshinao

Japanese Journal of Applied Physics 53(4), 043101-043101, 2014-03-10

DOI
19

Formation Scheme of Nano-Scale Devices Based on Ni Nanogaps Using Field-Emission-Induced Electromigration [in Japanese]

SUDA Ryutaro , ITO Mitsuki , MORIHARA Kohei , TOYONAKA Takahiro , TAKIKAWA Kazuki , SHIRAKASHI Jun-ichi

… ナノギャップに発現するエレクトロマイグレーション現象を利用することで,強磁性単電子トランジスタ(Ferromagnetic Single-Electron Transistor: FMSET)やNiナノギャップ系抵抗スイッチング素子,Ni系量子ポイントコンタクト(Quantum Point Contact: QPC)の作製について検討した.ナノギャップでのマイグレーションを利用した本手法では,作製された数十nmの初期ナノギャップに対して,あらかじめ設定 …

Technical report of IEICE. SDM 113(450), 95-100, 2014-02-27
20

Formation Scheme of Nano-Scale Devices Based on Ni Nanogaps Using Field-Emission-Induced Electromigration [in Japanese]

SUDA Ryutaro , ITO Mitsuki , MORIHARA Kohei , TOYONAKA Takahiro , TAKIKAWA Kazuki , SHIRAKASHI Jun-ichi

… ナノギャップに発現するエレクトロマイグレーション現象を利用することで,強磁性単電子トランジスタ(Ferromagnetic Single-Electron Transistor: FMSET)やNiナノギャップ系抵抗スイッチング素子,Ni系量子ポイントコンタクト(Quantum Point Contact: QPC)の作製について検討した.ナノギャップでのマイグレーションを利用した本手法では,作製された数十nmの初期ナノギャップに対して,あらかじめ設定 …

IEICE technical report. Electron devices 113(449), 95-100, 2014-02-27

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