CiNii
Notice of renewal procedure of Institution authentication service
Masunaga Masahiro , Crescitelli Viviana , Funaki Tsuyoshi
… The initial decline of ρ c was due to the formation of titanium-silicide alloy, whose barrier height is lower than that of the Ni2Si phase. …
Japanese Journal of Applied Physics 59(10), 104005, 2020-10
IR
ALHUSSAIN Hanan , MISE Takuto , KOBAYASHI Kohei , KIYONO Hajime
<p>The NH<sub>3</sub> nitriding process of TiSi<sub>2</sub> micrometer-sized powders were investigated in this paper. TiSi<sub>2</sub> powders were heat-treat …
Journal of the Ceramic Society of Japan 128(10), 677-684, 2020
J-STAGE
Nakai Masaaki , Niinomi Mitsuo , Liu Huihong , Kitashima Tomonori
… <p>The effect of Si addition on the microstructure and mechanical properties of a near-β titanium alloy Ti-17 with fully lamella microstructure was investigated. … The formation of (Ti, Zr) silicide particles at the prior-β grain interior and its grain boundaries were observed, and the presence of these particles were related to the disappearance of grain boundary α similar to the oxygen scavenging effect of boride particles reported previously. …
MATERIALS TRANSACTIONS 60(9), 1749-1754, 2019
Oh Jung-Min , Roh Ki-Min , Kwon Hanjung [他]
Materials transactions 56(1), 167-170, 2015-01
Chen Zhiyuan , Li Yaqiong , Tan Yi , Morita Kazuki
… Titanium silicide was synthesized via the reaction of titanium oxide bearing slag and molten silicon. … Results indicated that titanium oxide in slag was reduced by silicon with an intermetallic bulk being formed. … This novel synthesis method is a three-layer refining process that is much simpler and could reduce the cost of titanium silicide production significantly. …
MATERIALS TRANSACTIONS 56(11), 1919-1922, 2015
Oh Jung-Min , Roh Ki-Min , Kwon Hanjung , Lee Back-Kyu , Suh Chang-Youl , Lim Jae-Won
… In this study, Ti-Mo-Si ternary alloy ingots were prepared by the addition of Si (0.25–2.0 mass%) to Ti-10Mo alloy scraps in order to produce the raw materials for titanium carbonitride composites. … The tensile strength increased with Si addition up to a maximum of 1.0 mass%, reaching 883 MPa, but after this peak, it decreased sharply because of the brittleness that arose by the formation of titanium silicide. …
MATERIALS TRANSACTIONS 56(1), 167-170, 2015
OH J.-M. , LIM J.-M. , LEE B.-G. , SUH C.-Y. , CHO S.-W. , LEE S.-W. , CHOI G.-S.
… ratio reduction, the decrease in the grain size of Ti-Si alloy, and the formation of Ti silicide at higher Si content. …
MATERIALS TRANSACTIONS 51(11), 2009-2012, 2010-11-01
J-STAGE References (13)
SATO Kazunari , SHUDO Ken-ichi , AOKI Takeshi , IIDA Takanori , NISHIOKA Hiroaki , TORAMARU Masamitsu , OHNO Shin-ya , TANAKA Masatoshi
… Influence of the oxygen on island formation of titanium silicide on a Si(001) surface was studied by means of scanning tunneling microscopy to analyze the fundamental process of Metal-Oxide-Semiconductor (MOS) fabrication at the atomic scale. … The process is affected by desorption of SiO occurring at relatively lower temperature, while oxygen remains inside the silicide. …
Journal of the Vacuum Society of Japan 52(8), 461-464, 2009-08-20
J-STAGE References (24)
IIDA Takanori , TORAMARU Masamitsu , SATOH Kazunari , AOKI Takeshi , SHUDO Ken-ichi , OHNO Shin-ya , TANAKA Masatoshi
… Formation of titanium silicide islands by the coadsorption of titanium and oxygen on a Si(001) surface is studied by means of scanning tunneling microscopy. … When the coverage of titanium is at 2 ML, subsequent oxygen exposure at 973 K produces defects preferentially near the titanium silicide islands. …
Journal of the Vacuum Society of Japan 51(5), 316-319, 2008-05-20
Yamazaki K. , Nishioka H. , Shudo K. , Tanaka M. , Okuda T. , Harasawa A. , Matsuda I. , Kakizaki A. , Nakayama F. , Ohno S. , Toramaru M. , Ichikawa Y. , Yamazaki T. , Iida T. , Sato K. , Aoki T.
Meeting Abstracts of the Physical Society of Japan 63.2.4(0), 828, 2008
Yang Chung-Mo , Yun Sang-Won , Ha Jong-Bong , Na Kyung-Il , Cho Hyun-Ick , Lee Heon-Bok , Jeong Jong-Hwa , Kong Sung-Ho , Hahm Sung-Ho , Lee Jung-Hee
Japanese journal of applied physics Pt. 1 Regular papers, brief communications & review papers 46(4B), 1981-1983, 2007-04
DOI
KANEDA Kazuhiro , IKEMATSU Mineo , ISEKI Masahiro , TAKAOKA Daizo , HIGUCHI Tohru , HATTORI Takeshi , TSUKAMOTO Takeyo , YASUDA Masashi
Japanese journal of applied physics Pt. 1 Regular papers, brief communications & review papers 45(6), 5154-5162, 2006-06-15
References (25)
WU You-Lin , LAI Min-Yen
Japanese journal of applied physics. Pt. 2, Letters 45(8), L257-L258, 2006-03-25
References (11)
Iida T. , Ohwa Y. , Koma M. , Ohno S. , Shudo K. , Tanaka M.
Meeting Abstracts of the Physical Society of Japan 61.2.4(0), 758, 2006
NAKATSUKA Osamu , OKUBO Kazuya , TSUCHIYA Yoshinori , SAKAI Akira , ZAIMA Shigeaki , YASUDA Yukio
Japanese journal of applied physics Pt. 1 Regular papers, brief communications & review papers 44(5), 2945-2947, 2005-05-15
References (19) Cited by (1)
Nakatsuka Osamu , Okubo Kazuya , Tsuchiya Yoshinori , Sakai Akira , Zaima Shigeaki , Yasuda Yukio
… layers consisting of pyramidal domains with {111} facets at the Ni-silicide/Si interface can be formed by annealing at a temperature (350°C) lower than that for conventional Ni/Si systems. … layer with an atomically flat silicide/Si interface by additional annealing at 850°C, while the {111} facets at the NiSi<SUB>2</SUB>/Si interface remains in the Ni/Si system under the same annealing conditions. …
Japanese Journal of Applied Physics 44(5A), 2945-2947, 2005
Hiramatsu Mineo , Nagao Hidetoshi , Taniguchi Masaki , Amano Hiroshi , Ando Yoshinori , Hori Masaru
… A titanium nitride (TiN) thin film was used as a buffer layer on the substrate in order to prevent the formation of Co silicide. …
Japanese Journal of Applied Physics 44(20-23), L693-L695, 2005
HIBI Yuko , SASAKI Shinya
Tribology behavior of SiC/Ti_3SiC_2 compsosite, which was produced by spark plasma sintering method, was evaluated under dry condition, in distilled water, in 3 wt% NaCl aqueous solution and ethanol. …
The proceedings of the JSME annual meeting 2005.4(0), 209-210, 2005
HSU H. F. , CHIANG T. F. , HSU H. C. , CHEN L. J.
Japanese Journal of Applied Physics Pt. 1 Regular Papers, Short Notes & Review Papers 43(7), 4541-4544, 2004-07-30
References (10) Cited by (1)
HSU H. C. , HSU H. F. , CHIANG T. F. , LIAO K. F. , CHEN L. J.
Japanese Journal of Applied Physics Pt. 1 Regular Papers, Short Notes & Review Papers 43(7), 4537-4540, 2004-07-30