Search Results 1-20 of 210

  • Surface Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity for Novel Terahertz Light Sources (Special Section on Fabrication Technologies Supporting the Photonic/Nanostructure Devices)

    Kitada Takahiro , Ota Hiroto , Lu Xiangmeng , Kumagai Naoto , Isu Toshiro

    … Compact and room-temperature operable terahertz emitting devices have been proposed using a semiconductor coupled multilayer cavity that consists of two functional cavity layers and three distributed Bragg reflector (DBR) multilayers. … The control of the nonlinear polarization by face-to-face bonding of two epitaxial wafers with different orientations is quite effective to achieve bright terahertz emission from the coupled cavity. …

    IEICE Transactions on Electronics E100-C(2), 171-178, 2017-02-01

    IR 

  • Surface Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity for Novel Terahertz Light Sources

    KITADA Takahiro , OTA Hiroto , LU Xiangmeng , KUMAGAI Naoto , ISU Toshiro

    … <p>Compact and room-temperature operable terahertz emitting devices have been proposed using a semiconductor coupled multilayer cavity that consists of two functional cavity layers and three distributed Bragg reflector (DBR) multilayers. … The control of the nonlinear polarization by face-to-face bonding of two epitaxial wafers with different orientations is quite effective to achieve bright terahertz emission from the coupled cavity. …

    IEICE Transactions on Electronics E100.C(2), 171-178, 2017

    J-STAGE 

  • Tips for the measurement of a majority-carrier concentration and mobility  [in Japanese]

    MATSUURA Hideharu

    <p>半導体基板およびエピタキシャル膜の基礎的な電気特性の中では,抵抗率,伝導型(p型またはn型),多数キャリヤ濃度と多数キャリヤ移動度が重要です.これらを測定するために,ホール効果測定を用います.本稿ではホール効果測定の簡単な説明と,測定結果の検証および解析方法に関して解説します.</p>

    Oyo Buturi 85(7), 601-605, 2016

    J-STAGE 

  • Formation of Epitaxial Metal/Germanium Contacts and Control of Electric Conduction Property at the Interface  [in Japanese]

    NAKATSUKA Osamu , DENG Yunsheng , SUZUKI Akihiro , SAKASHITA Mitsuo , TAOKA Noriyuki , ZAIMA Shigeaki

    省電力・高速Geデバイスの実現には、金属/Ge接合のコンタクト抵抗低減に向けた界面電子物性の制御が必要不可欠である。本研究では、Ge(001)およびGe(110)基板上へのエピタキシャルNiGe薄膜の形成技術を構築し、様々な界面結晶構造を有するNiGe/n-Geショットキー接合における電気的特性を評価した。NiGe/n-Ge界面のショットキー障壁高さは、NiGe/Ge界面の結晶構造に強く依存するこ …

    Technical report of IEICE. SDM 114(469), 17-22, 2015-03-02

  • In-situ Low-energy Electron Microscopy Observations of Crystal Growth(<Special Issue>Semiconductor Crystal Growth Mechanism studied by in-situ Observation Techniques)  [in Japanese]

    Hibino Hiroki

    … monolayers on Si(111), growth of twinned epitaxial Si layers on Si(111), and growth of graphene on metals by carbon segregation. …

    Journal of the Japanese Association for Crystal Growth 42(3), 225-231, 2015

    J-STAGE 

  • Crystal Growth and Interface Engineering of Group-IV Semiconductor Materials for Multi-Junction Solar Cells(<Special Issue>Novel Solar Cells Utilizing Nano- and Hetero-Structure)  [in Japanese]

    Nakatsuka Osamu , Zaima Shigeaki

    … We have examined the crystal growth of pseudomorphic epitaxial layers of Ge_<1-x-y>Si_xSn_y ternary alloy on Ge(001) substrates. …

    Journal of the Japanese Association for Crystal Growth 41(2), 74-80, 2014

    J-STAGE 

  • Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

    Yan F. , Devaty R. P. , Choyke W. J. , Gali A. , Kimoto T. , Ohshima T. , Pensl G.

    Dicarbon antisite defects were created by either electron irradiation or ion implantation into 4H-SiC. The no-phonon lines from the dicarbon antisite defect center were observed with their phonon repl …

    APPLIED PHYSICS LETTERS 100(13), 2012-03

    IR 

  • Analytical model for reduction of deep levels in SiC by thermal oxidation

    Kawahara Koutarou , Suda Jun , Kimoto Tsunenobu

    Two trap-reduction processes, thermal oxidation and C+ implantation followed by Ar annealing, have been discovered, being effective ways for reducing the Z[1/2] center (EC – 0.67 eV), which is a lifet …

    Journal of Applied Physics 111(5), 2012-03

    IR 

  • High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime

    Zippelius Bernd , Suda Jun , Kimoto Tsunenobu

    … Four nitrogen-doped epitaxial layers with various initial concentrations of the Z_[1/2]- and EH_[6/7]-centers (10^[11]-10^[14]cm^[-3]) were investigated by means of deep level transient spectroscopy and microwave photoconductance decay. …

    JOURNAL OF APPLIED PHYSICS 111(3), 2012-02-01

    IR 

  • Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping

    Feng Gan , Suda Jun , Kimoto Tsunenobu

    Threading dislocations (TDs) in 4H-SiC epilayers have been investigated by means of micro-photoluminescence (μ-PL) mapping at room temperature. Enhanced nonradiative recombination at TDs was confirmed …

    JOURNAL OF APPLIED PHYSICS 110(3), 2011-08-01

    IR 

  • Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region

    Banal Ryan G. , Funato Mitsuru , Kawakami Yoichi

    … Thus, to obtain the same λ, MMEE requires a lower growth temperature than the continuous method, compromising the quality of the AlN and AlGaN layers as well as the IQE of QWs. …

    Applied Physics Letters 99(1), 2011-07

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  • Formation of a semi-insulating layer in n-type 4H-SiC by electron irradiation

    Kaneko Hiromi , Kimoto Tsunenobu

    Electron irradiation has been applied to the formation of a semi-insulating 4H-SiC(0001) layer. The resistivity of the semi-insulating layer, which was irradiated with a fluence of 1.9 × 10^[18] cm^[− …

    APPLIED PHYSICS LETTERS 98(26), 2011-06-27

    IR 

  • Polarization Engineering in GaN Power Devices  [in Japanese]

    UEDA Tetsuzo , NAKAZAWA Satoshi , MURATA Tomohiro , ISHIDA Hidetoshi , INOUE Kaoru , TANAKA Tsuyoshi , UEDA Daisuke

    …   This paper reviews novel design of epitaxial structure for GaN-based power devices taking advantages of the material's unique polarization. … AlGaN/GaN superlattice and polarization-matched InAlGaN quaternary alloy capping layers effectively reduce the series resistance of AlGaN/GaN heterojunction field effect transistors (HFETs) by reducing the potential barriers above the heterojunction. …

    Journal of the Vacuum Society of Japan 54(6), 393-397, 2011-06-20

    J-STAGE  References (12)

  • Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-type 4H-SiC epilayers

    Hayashi T. , Asano K. , Suda J. , Kimoto T.

    Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-type 4H-SiC epilayers are investigated. The authors reported that the carrier lifetime in n-type epilayers increas …

    JOURNAL OF APPLIED PHYSICS 109(11), 2011-06-01

    IR 

  • Toward Silicide-based solar cells and spintronics  [in Japanese]

    SUEMASU Takashi , SAITO Takanobu , OKADA Atsushi , TOH Katsuaki , KHAN M. Ajmal , DU Weijie , MAKABE Kenji , ITO Keita , HARADA Kazunori , USAMI Takanori

    シリサイド半導体BaSi_2はSi(111)基板にエピタキシャル成長が可能な禁制帯幅が約1.3eVの間接遷移型半導体である。Baの半数をSrで置換することで、禁制帯幅を太陽電池に相応しい1.4eVに制御できる。さらに、光吸収係数が1.5eVの光に対して約3×10^4cm^<-1>に達する。このような性質から、BaSi_2は高効率な薄膜結晶太陽電池への応用が期待できる。本稿では、不純物ド …

    IEICE technical report 110(424), 1-6, 2011-02-16

    References (20)

  • Toward Silicide-based solar cells and spintronics  [in Japanese]

    SUEMASU Takashi , SAITO Takanobu , OKADA Atsushi , TOH Katsuaki , KHAN M. Ajmal , DU Weijie , MAKABE Kenji , ITO Keita , HARADA Kazunori , USAMI Takanori

    シリサイド半導体BaSi_2はSi(111)基板にエピタキシャル成長が可能な禁制帯幅が約1.3eVの間接遷移型半導体である。Baの半数をSrで置換することで、禁制帯幅を太陽電池に相応しい1.4eVに制御できる。さらに、光吸収係数が1.5eVの光に対して約3×10^4cm^<-1>に達する。このような性質から、BaSi_2は高効率な薄膜結晶太陽電池への応用が期待できる。本稿では、不純物ド …

    IEICE technical report 110(423), 1-6, 2011-02-16

    References (20)

  • Structural and electronic characterization of (2,3(3)) bar-shaped stacking fault in 4H-SiC epitaxial layers

    Camarda Massimo , Canino Andrea , La Magna Antonino , La Via Francesco , Feng G. , Kimoto T. , Aoki M. , Kawanowa H.

    … Crystallographic, electronic, and energetic analyses of the (2, 3_3) [or (2, 3, 3, 3) in the standard Zhadanov notation] bar-shaped stacking fault, observed in as-grown 4H-SiC epitaxial layers, are presented. …

    APPLIED PHYSICS LETTERS 98(5), 2011-02

    IR 

  • Boosting of Blocking Voltages in GaN Transistors by Widening Depletion Layer in Si Substrate  [in Japanese]

    UMEDA Hidekazu , SUZUKI Asamira , ANDA Yoshiharu , ISHIDA Masahiro , UEDA Tetsuzo , TANAKA Tsuyoshi , UEDA Daisuke

    Si基板に空乏層を形成することで、同基板上GaNパワートランジスタの高耐圧化を実現する、いわゆる耐圧ブースト技術を開発した.今回,高ドレイン電圧印加状態において,GaNエピタキシャル層とSi基板の界面に電子チャネルが形成され,この電子チャネルを経路とするリーク電流がトランジスタの耐圧を制限していることを見出した.トランジスタのチップ周辺に,イオン注入により選択的にp型層を形成し,リーク電流を抑制し …

    IEICE technical report 110(359), 51-54, 2011-01-06

    References (7)

  • Boosting of Blocking Voltages in GaN Transistors by Widening Depletion Layer in Si Substrate  [in Japanese]

    UMEDA Hidekazu , SUZUKI Asamira , ANDA Yoshiharu , ISHIDA Masahiro , UEDA Tetsuzo , TANAKA Tsuyoshi , UEDA Daisuke

    Si基板に空乏層を形成することで、同基板上GaNパワートランジスタの高耐圧化を実現する、いわゆる耐圧ブースト技術を開発した.今回,高ドレイン電圧印加状態において,GaNエピタキシャル層とSi基板の界面に電子チャネルが形成され,この電子チャネルを経路とするリーク電流がトランジスタの耐圧を制限していることを見出した.トランジスタのチップ周辺に,イオン注入により選択的にp型層を形成し,リーク電流を抑制し …

    IEICE technical report 110(358), 51-54, 2011-01-06

    References (7)

  • Major deep levels with the same microstructures observed in n-type 4H-SiC and 6H-SiC

    Sasaki S. , Kawahara K. , Feng G. , Alfieri G. , Kimoto T.

    Major deep levels observed in as-grown and irradiated n-type 4H–SiC and 6H–SiC epilayers have been investigated. After low-energy electron irradiation, by which only carbon atoms are displaced, five t …

    JOURNAL OF APPLIED PHYSICS 109(1), 2011-01-01

    IR 

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