Lee Choong-Bong
,
Park James
,
Cutler Charlotte
,
DeSisto Jason
,
Rena Rochelle
,
Marangoni Tomas
,
Aqad Emad
,
Thackeray James W.
… <p>Utilizing Line and Space (L/S) application on high resolution patterning to critical dimension (CD) below 42nm line thru typical ArF PTD process sees severe problems of trade-off or lack of correlation among linewidth roughness (LWR) and dose response (Esize), which are critical performers for delivering decent patterning ability toward Multiple Patterning Process (MPP). …
J-STAGE