Electrical Conductivity of MoSi2-SiC Cera1mics Prepared by Reaction Sintering of Polysilazane with Molybdnum Metal
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- Miyamoto Masayoshi
- Muroran Institute of Technology
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- Sasaki Makoto
- Muroran Institute of Technology
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- Mukaida Ken-ichi
- Muroran Institute of Technology
書誌事項
- タイトル別名
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- Electrical Conductivity of MoSi2-SiC Ceramics Prepared by Reaction Sintering of Polysilazane with Molybdenum Metal.
- Electrical Conductivity of MoSi2-SiC Ce
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To develop high-temperature heat elements with a small temperature-coefficient electrical conductivity, small-grained MoSi2-SiC ceramics were prepared by reaction sintering ceramic precursor with molybdenum powder. By second sintering at 1773 K for 10 h, two phases of MoSi2 and β-SiC were formed. The average grain size of both MoSi2 and SiC ranges several tens nanometers. Electrical conductivity measurement revealed that conductive behavior changed from semiconductive to metallic with increasing molybdenum disilicide content. 54.3 wt% MoSi2/β-SiC composite showed an almost constant temperature coefficent in the temperature range at around to 600-850 K.
収録刊行物
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- 粉体および粉末冶金
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粉体および粉末冶金 45 (12), 1162-1165, 1998
一般社団法人 粉体粉末冶金協会
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詳細情報 詳細情報について
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- CRID
- 1390001206308218624
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- NII論文ID
- 10002053419
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- NII書誌ID
- AN00222724
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- ISSN
- 18809014
- 05328799
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- NDL書誌ID
- 4629453
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可