Radiation Dosimeters for High Dose by Commercial PMOS Transistors Using Normalized Drain Current as Dosimetric Parameter.
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- CHANG-LIAO Kuei-Shu
- Department of Nuclear Engineering and Engineering Physics National Tsing Hua University
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- WU Tai-Liang
- Department of Nuclear Engineering and Engineering Physics National Tsing Hua University
Bibliographic Information
- Other Title
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- Radiation Dosimeters for High Dose by C
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Abstract
A PMOS transistor that is commercially available device can function as a practical radiation dosimeter for high dose. A new dosimetric parameter, that is shift rate of drain current, is proposed and demonstrated to reduce the possible errors of measurement. The calibration curve of dosimetric parameter vs. radiation dose shows a very linear characteristic. Some modifications were suggested to compensate the room temperature effects. The gate bias can be applied to further increase the dosimetric sensitivity and extend the dose of radiation measurement to a lower range.
Journal
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- Journal of Nuclear Science and Technology
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Journal of Nuclear Science and Technology 34 (10), 992-995, 1997
Atomic Energy Society of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390282679071603712
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- NII Article ID
- 10002078269
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- NII Book ID
- AA00703720
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- COI
- 1:CAS:528:DyaK2sXnslCgurY%3D
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- ISSN
- 18811248
- 00223131
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- NDL BIB ID
- 4326333
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed