Preparation and It's Properties of High Resistivity NiP Films by Means of Electroless Deposition.

DOI Web Site 3 Citations 10 References
  • HATSUKAWA Takuro
    Advanced Res. Center for Sci. and Eng., Waseda Univ.
  • HIGASHIKAWA Taichi
    School of Sci. and Eng.; Kagami Memorial Lab. for Material Sci. and Tech., Waseda Univ.
  • OSAKA Tetsuya
    Advanced Res. Center for Sci. and Eng., Waseda Univ. School of Sci. and Eng.; Kagami Memorial Lab. for Material Sci. and Tech., Waseda Univ.
  • NAKAO Hidehiko
    Res. Dept., Meltex Inc.

Bibliographic Information

Other Title
  • 無電解析出法による高比抵抗ＮｉＰ皮膜の作製とその特性
  • ムデンカイ セキシュツホウ ニヨル コウ ヒテイコウ NiP ヒマク ノ サク

Search this article

Abstract

High-resistivity NiP films were prepared by electroless deposition while varying the complexing agent species. When complexing agents having -NH2 and=NH groups, e. g., amino acids or amines are used for the NiP bath, higher resistivity NiP films are obtained with electroless deposition. Complexing agents of β-alanine, diethylenetriamine, and sodium L-glutamate were most suitable making higher resistivity NiP films. The highest resistivity was obtained from a diethylenetriamine bath. The resistivity of NiP as-deposited film from a diethylenetriamine bath is 5, 400μΩcm, compared to 160μΩcm for usual NiP films. The most suitable NiP film from the diethylenetriamine bath shows resistivity stable against annealing at about 400°C. High specific resistivity films were found to contain a small amount of carbon. The NiP film from the diethylenetriamine bath contained ca. 3at% carbon, and exhibited a grain structure even at the amorphous state.

Journal

Citations (3)*help

See more

References(10)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top