高純度銅蒸着原料を用いた蒸着膜のエッチングおよびめっき特性

• 御田 護

  日立電線 (株) 電線工場

書誌事項

タイトル別名

• Chemical Etching and Plating Characteristics of Vapor Deposited Copper Film Using High Purity Copper Sources.
• コウ ジュンド ドウ ジョウチャク ゲンリョウ オ モチイタ ジョウチャク マ

抄録

Cu 99.99mass% (4N) and Cu 99.9999mass% (6N) copper source metals were used for vapor deposition to consider the effects of the purity of the source metal on the photochemical etching and electroplating of vapor deposited copper. In comparison to film deposited using a 4N copper source, the film deposited using a 6N source exhibited superior etching pattern wall smoothness in photochemical etching and was free from dendrite growth in nickel plating.<br>X-ray diffraction analysis showed no difference in copper crystal orientation between films formed with the 4N and 6N sources. Sputtering AES however, showed that there was less oxygen content in the copper surface deposited using the 6N copper source.

収録刊行物

• 表面技術

  表面技術 48 (5), 533-538, 1997

  一般社団法人 表面技術協会

キーワード

• Electro Plating
• Vapor Deposition
• Chemical Etching
• High Purity Copper
• Thin Film

詳細情報

• CRID: 1390282679091681920
• NII論文ID: 10002259075
• NII書誌ID: AN1005202X
• DOI: 10.4139/sfj.48.533
• ISSN: 18843409
• ISSN: 09151869
• NDL書誌ID: 4217060
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4217060
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可