書誌事項
- タイトル別名
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- Low Temperature Preparation of Transparent Conducting Material in ZnO-In2O3 System by Homogenenous Aqueous Solution Method.
- キンイツ エキソウホウ ニ ヨル Zno-In2O3ケイ トウメイ ドウデン ブッシツ ノ テイオン ゴウセイ
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Formation of both (Zn1-xInx)O1+x/2 solid solution and (ZnO)mIn2O3 compound was investigated by firing the precipitates through mixed aqueous solution of Zn and In nitrates. The solid solution range was enlarged to 15% by its gel formation adding citric acid. The homologous (ZnO)mIn2O3 compound (m>12) with very long interlayer distance precipitated around 650°C by heating the homogenous solid solution. It gradually decomposed to the compounds with m<12 and finally crystallized as a compound with the corresponding starting m-composition. Its thin film was prepared by dip coating method using diethylene glycol as a solvent. The film fired at 600°C was transparent in a wavelength range longer than 400nm. Its electrical resistivity gradually decreased to ca. 0.01Ωcm with the amount of doped In.
収録刊行物
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- 粉体および粉末冶金
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粉体および粉末冶金 46 (2), 189-193, 1999
一般社団法人 粉体粉末冶金協会
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詳細情報 詳細情報について
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- CRID
- 1390282681285410432
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- NII論文ID
- 10002261908
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- NII書誌ID
- AN00222724
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- ISSN
- 18809014
- 05328799
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- NDL書誌ID
- 4655591
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可