真空紫外光源とその応用　　塩素吸着シリコン表面のレーザー励起エッチング

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タイトル別名
  • Vacuum-Ultraviolet Light Sources and Their Applications for Processings. Laser-induced Etching of Chlorinated Silicon Surfaces.
  • エンソ キュウチャク シリコン ヒョウメン ノ レーザーレイキエッチング

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Measurements of excitation spectra of photoetching of chlorinated Si(111)7×7 surfaces stimulated by ultraviolet nanosecond pulse laser light revealed that there are two distinct spectral peaks, one (α-peak) being located near 290nm and another (β-peak) at 245 nm. The α-peak exhibits a strong supralinear dependence on light intensity above laser fluence of∼100mJ/cm2 pulse, while the β-peak grows linearly with light intensity. The red shift of the α-peak with increasing intensity coincides with the shift of laser abration, which strongly suggests that the origin of the α-peak photoetching is thermal etching enhanced by surface heating due to interband transition in the substrate. The dependence on polarization of the incident light suggests that the β-peak photoetching originates in excitation of hot carriers in the substrate which are captured resonantly by the anti-bonding states of the adsorbate chlorides resulting in destabilization of the molecules.

収録刊行物

  • 表面科学

    表面科学 20 (6), 393-400, 1999

    公益社団法人 日本表面科学会

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