Exchange Anisotropy of CrNx/FeNy/CrNx Trilayer Thin Films Prepared by Reactive Sputtering

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  • Tsuchiya Yasuaki
    Division of Chemistry, Graduate School of Science, Kyoto University
  • Kosuge Koji
    Division of Chemistry, Graduate School of Science, Kyoto University
  • Yamaguchi Sadae
    Institute of Materials Research, Tohoku University
  • Nakayama Noriaki
    Department of Advanced Materials Science and Engineering, Faculty of Engineering, Yamaguchi University

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タイトル別名
  • Exchange Anisotropy of CrN<I><SUB>x</SUB></I>/FeN<I><SUB>y</SUB></I>/CrN<I><SUB>x</SUB></I> Trilayer Thin Films Prepared by Reactive Sputtering
  • Exchange Anisotropy of CrNx FeNy CrNx T

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The exchange magnetic anisotropy of CrNx/FeNy/CrNx trilayer films (x=1.0 or 1.2, and y=0.27) has been investigated by means of magnetization measurements. M-H loops of samples composed of nearly-stoichiometric CrN1.0 with TN=260 K show exchange biasing shift Heb below 200 K. The uniaxial anisotropy energy per film area is 3.0×10−4 J/m2 at 5 K. For samples with 20 nm-thick FeN0.27 layer and CrN1.0 layers thicker than 20 nm, the values of Heb at 5 K are almost 13.5 kA/m. The samples composed of over-stoichiometric CrN1.2 show Heb below 50 K, indicating that TN of over-stoichiometric CrN1.2 is much lower than that of nearly-stoichiometric CrN1.0. The values of Heb for stoichiometric and over-stoichiometric systems are nearly equal below 20 K and, in this temperature range, Heb shows unusual enhancements with decreasing temperature. It is suggested that the nitrogen composition at the interface region of stoichiometric CrN layer is over-stoichiometric.

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