Simulation of Growth Rate Variation of CVD-Mo Film along Axial Direction in Horizontal Tubular Reactor

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Abstract

In the authors’ previous study, the Mo film was chemical-vapour-deposited on the inner wall of a horizontal tubular reactor, using MoCl5 and H2, as a mixture of reactive feed gas. Growth rate distributions along the axial direction of the reactor were obtained under different deposition conditions.<BR>In this study, the distribution curves were simulated by using a calculation model, which took the rates of mass transfer, gas phase reaction and surface reaction into consideration. The reaction rate constants were estimated from the mass balance calculation.<BR>The simulated growth rate distributions agreed with the experimental results and they were able to explain the tendency of flat distribution at low PH<SUB>2</SUB> and peak formation in the distribution curves at high PH<SUB>2</SUB>.<BR>It turned out that the change in partial pressure along the axial direction of the reactor became smaller as the total gas flow rate increased. The calculated partial pressure of the intermediate species had a maximum in the area close to the inlet and its order was not strongly dependent on PH<SUB>2</SUB> and PMoCl<SUB>5</SUB>. The dependence of fractional conversion from MoCl5 into Mo on the gas composition was discussed, by considering the calculated results.

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