Recrystallization and Related Phenomena. Mechanism of Orientation Selectivity of Secondary Recrystallization in Fe-3%Si Alloy.

• Ushigami Yoshiyuki

  Electromagnetic Materials, Steel Research Laboratories, Nippon Steel Corporation

• Kubota Takeshi

  Electromagnetic Materials, Steel Research Laboratories, Nippon Steel Corporation

• Takahashi Nobuyuki

  Technical Development Bureau, Nippon Steel Corporation

Abstract

Selective growth behavior of {110} <001> grains has been studied utilizing the temperature gradient annealing method. As grains grow, the average deviation angle from the ideal {110} <001> orientation becomes smaller and orientation distribution changes corresponding to that of coincidence grains in the matrix. Secondary recrystallization temperature depends on the orientation of secondary recrystallized grain and sharper {110} <001> grains grow preferentially at lower temperatures.<br> These phenomena are explained by modified Hillert's model of grain growth, which takes the grain boundary characteristics into account. Sharper {110} <001> grains, which have higher frequency of coincidence grains in the primary recrystallized matrix, suffer lower pinning force from the precipitates and thus grow preferentially at lower temperatures.

Journal

• ISIJ International

  ISIJ International 38 (6), 553-558, 1998

  The Iron and Steel Institute of Japan

Keywords

• silicon steel
• secondary recrystallization
• texture
• inhibitor
• coincidence boundary
• grain growth

Details

• CRID: 1390001206452884992
• NII Article ID: 10002459725
• NII Book ID: AA10680712
• DOI: 10.2355/isijinternational.38.553
• COI: 1:CAS:528:DyaK1cXkvVyqtLo%3D
• ISSN: 13475460
• ISSN: 09151559
• Web Site: http://www.jstage.jst.go.jp/article/isijinternational1989/38/6/38_6_553/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed