Structural Change Process of Si(100)4*3-In Surface Phase Induced by Atomic Hydrogen Interaction.

DOI Web Site 16 References
  • KUBO Osamu
    Department of Electronic Engineering, Faculty of Engineering, Osaka University
  • RYU Jeong-Tak
    Department of Electronic Engineering, Faculty of Engineering, Osaka University
  • TANI Hitoshi
    Department of Electronic Engineering, Faculty of Engineering, Osaka University
  • HARADA Toru
    Department of Electronic Engineering, Faculty of Engineering, Osaka University
  • FUSE Takashi
    Department of Electronic Engineering, Faculty of Engineering, Osaka University
  • FUJINO Toshiaki
    Department of Electronic Engineering, Faculty of Engineering, Osaka University
  • SARANIN Alexander A.
    Institute of Automation and Control Processes
  • ZOTOV Andrey V.
    Institute of Automation and Control Processes
  • KATAYAMA Mitsuhiro
    Department of Electronic Engineering, Faculty of Engineering, Osaka University
  • OURA Kenjiro
    Department of Electronic Engineering, Faculty of Engineering, Osaka University

Bibliographic Information

Other Title
  • 原子状水素が誘起するＳｉ（１００）４×３‐Ｉｎ表面の構造変化過程
  • ゲンシジョウ スイソ ガ ユウキ スル Si 100 4 3 In ヒョウメン ノ コウゾウ ヘンカ カテイ

Search this article

Abstract

We have investigated the structural change process induced by atomic hydrogen interaction with the 4 × 3 surface phase in the In/Si (100) system using scanning tunneling microscopy (STM) and coaxial impact collision ion scattering spectroscopy (CAICISS).<BR>It has been revealed that when the 4 × 3-In surface is exposed to atomic hydrogen, small and uniform In clusters, the size of which grows with increasing substrate temperature during hydrogen exposure, are formed on the Si surface. These clusters are not epitaxially grown crystallites but amorphous or poly-crystalline in contrast with those of H/ Si (111) √3×√3-Ag, -Al or-Pb surfaces. The initial stage of structural change process is also different from H/ Si (111) √3×√3-Ag or H/Si (111) 4 × 1-In surfaces but similar to H/Si (111) √3×√3-In surface.<BR>The In-denuded regions show not 1 × 1 but 4 × 1 periodicity. From this result, we have confirmed that the underlying atomic layer of a silicon substrate in the Si (100) 4 × 3-In surface phase is reconstructed with a 4 × 1 periodicity and proposed a model of 4 × 3-In structure.

Journal

  • Shinku

    Shinku 42 (3), 212-216, 1999

    The Vacuum Society of Japan

References(16)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top