LiNbO3 Thin Film Prepared by Pulsed Laser Deposition.
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- KAKEHI Yoshiharu
- Technology Research Institute of Osaka Prefecture
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- OKAMOTO Akio
- Technology Research Institute of Osaka Prefecture
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- SAKURAI Yoshiaki
- Technology Research Institute of Osaka Prefecture
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- NISHIKAWA Yoshito
- Technology Research Institute of Osaka Prefecture
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- OGAWA Souichi
- Technology Research Institute of Osaka Prefecture
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- YOTSUYA Tsutom
- Osaka Science and Technology Center
Bibliographic Information
- Other Title
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- レーザアブレーション法を用いたLiNbO3薄膜の作製
- レーザアブレーションホウ オ モチイタ LiNbO3 ハクマク ノ サクセイ
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Abstract
A LiNbO3 thin film was successfully fabricated onto a sapphire (001) substrate using pulsed laser deposition. The film quality was largely affected by substrate temperature, oxygen gas pressure, laser fluence and laser repetition frequency. By adjusting these conditions, a highly c-axis oriented LiNbO3 film was obtained. The ordinary refractive index of the film became 2.28 at 632.8 nm of wavelength, which coincided with that of a LiNbO3 single crystal. RHEED observation showed the film had twin boundaries. Further improvements are now undergoing.
Journal
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- Shinku
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Shinku 42 (3), 261-264, 1999
The Vacuum Society of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390282679040451968
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- NII Article ID
- 10002476415
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- NII Book ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL BIB ID
- 4714965
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed